Cycling-induced degradation of metal-oxide resistive switching memory (RRAM)

2015 ◽  
Author(s):  
Z.-Q. Wang ◽  
S. Ambrogio ◽  
S. Balatti ◽  
S. Sills ◽  
A. Calderoni ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Resistive Switching ◽  
Resistive Switching Memory ◽  
Switching Memory

Bias Polarity-Induced Transformation of Point Contact Resistive Switching Memory from Single Transparent Conductive Metal Oxide Layer

2015 ◽  
Vol 1 (8) ◽  
pp. 1500061 ◽  
Author(s):  
Jian-Shiou Huang ◽  
Yung-Chang Lin ◽  
Hung-Wei Tsai ◽  
Wen-Chun Yen ◽  
Chia-Wei Chen ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Oxide Layer ◽  
Resistive Switching ◽  
Point Contact ◽  
Resistive Switching Memory ◽  
Metal Oxide Layer ◽  
Switching Memory

scholarly journals Postcycling Degradation in Metal-Oxide Bipolar Resistive Switching Memory

2016 ◽  
Vol 63 (11) ◽  
pp. 4279-4287 ◽  
Author(s):  
Zhongqiang Wang ◽  
Stefano Ambrogio ◽  
Simone Balatti ◽  
Scott Sills ◽  
Alessandro Calderoni ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Resistive Switching ◽  
Bipolar Resistive Switching ◽  
Resistive Switching Memory ◽  
Switching Memory

Dynamics of electroforming in binary metal oxide-based resistive switching memory

2015 ◽  
Vol 118 (11) ◽  
pp. 114903 ◽  
Author(s):  
Abhishek A. Sharma ◽  
Ilya V. Karpov ◽  
Roza Kotlyar ◽  
Jonghan Kwon ◽  
Marek Skowronski ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Resistive Switching ◽  
Resistive Switching Memory ◽  
Binary Metal ◽  
Binary Metal Oxide ◽  
Switching Memory

An Electronic Synapse Device Based on Metal Oxide Resistive Switching Memory for Neuromorphic Computation

2011 ◽  
Vol 58 (8) ◽  
pp. 2729-2737 ◽  
Author(s):  
Shimeng Yu ◽  
Yi Wu ◽  
Rakesh Jeyasingh ◽  
Duygu Kuzum ◽  
H.-S. Philip Wong
Keyword(s):  
Metal Oxide ◽  
Resistive Switching ◽  
Resistive Switching Memory ◽  
Electronic Synapse ◽  
Switching Memory
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