Realization of Diverse Spike-timing-dependent Plasticity with Nanosecond Timescale Based on Metal Oxide Resistive Switching Memory

2020 ◽  
Author(s):  
Ruiyi Li ◽  
Peng Huang ◽  
Yulin Feng ◽  
Zheng Zhou ◽  
Xiangyu Wang ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Resistive Switching ◽  
Spike Timing ◽  
Spike Timing Dependent Plasticity ◽  
Dependent Plasticity ◽  
Resistive Switching Memory ◽  
Switching Memory

scholarly journals A Compact Model for Stochastic Spike-Timing-Dependent Plasticity (STDP) Based on Resistive Switching Memory (RRAM) Synapses

2020 ◽  
Vol 67 (7) ◽  
pp. 2800-2806
Author(s):  
Stefano Bianchi ◽  
Giacomo Pedretti ◽  
Irene Munoz-Martin ◽  
Alessandro Calderoni ◽  
Nirmal Ramaswamy ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Spike Timing ◽  
Compact Model ◽  
Spike Timing Dependent Plasticity ◽  
Dependent Plasticity ◽  
Resistive Switching Memory ◽  
Switching Memory

Bias Polarity-Induced Transformation of Point Contact Resistive Switching Memory from Single Transparent Conductive Metal Oxide Layer

2015 ◽  
Vol 1 (8) ◽  
pp. 1500061 ◽  
Author(s):  
Jian-Shiou Huang ◽  
Yung-Chang Lin ◽  
Hung-Wei Tsai ◽  
Wen-Chun Yen ◽  
Chia-Wei Chen ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Oxide Layer ◽  
Resistive Switching ◽  
Point Contact ◽  
Resistive Switching Memory ◽  
Metal Oxide Layer ◽  
Switching Memory

A synaptic device built in one diode–one resistor (1D–1R) architecture with intrinsic SiOx-based resistive switching memory

2016 ◽  
Vol 1 (4) ◽  
Author(s):  
Yao-Feng Chang ◽  
Burt Fowler ◽  
Ying-Chen Chen ◽  
Fei Zhou ◽  
Chih-Hung Pan ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Silicon Oxide ◽  
Complementary Metal Oxide Semiconductor ◽  
Long Term Potentiation ◽  
Spike Timing ◽  
Oxide Semiconductor ◽  
Resistive Switching Memory ◽  
Term Potentiation ◽  
Switching Memory

Abstract We realize a device with biological synaptic behaviors by integrating silicon oxide (SiOx) resistive switching memory with Si diodes to further minimize total synaptic power consumption due to sneak-path currents and demonstrate the capability for spike-induced synaptic behaviors, representing critical milestones for the use of SiO2-based materials in future neuromorphic computing applications. Biological synaptic behaviors such as long-term potentiation, long-term depression, and spike-timing dependent plasticity are demonstrated systemically with comprehensive investigation of spike waveform analyses and represent a potential application for SiOx-based resistive switching materials. The resistive switching SET transition is modeled as hydrogen (proton) release from the (SiH)2 defect to generate the hydrogenbridge defect, and the RESET transition is modeled as an electrochemical reaction (proton capture) that re-forms (SiH)2. The experimental results suggest a simple, robust approach to realize programmable neuromorphic chips compatible with largescale complementary metal-oxide semiconductor manufacturing technology.

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