Electrical characteristics of resistive switching memory with metal oxide nanoparticles on a graphene layer

2013 ◽  
Vol 543 ◽  
pp. 106-109 ◽  
Author(s):  
Dong Uk Lee ◽  
Dongwook Kim ◽  
Eun Kyu Kim ◽  
Won-Ju Cho ◽  
Young-Ho Kim ◽  
...  
2018 ◽  
Vol 20 (8) ◽  
pp. 5771-5779 ◽  
Author(s):  
Yanmei Sun ◽  
Dianzhong Wen ◽  
Xuduo Bai

Nonvolatile ternary memory devices were fabricated from the composites polymer blends containing zinc oxide (ZnO) nanoparticles.


2015 ◽  
Vol 1 (8) ◽  
pp. 1500061 ◽  
Author(s):  
Jian-Shiou Huang ◽  
Yung-Chang Lin ◽  
Hung-Wei Tsai ◽  
Wen-Chun Yen ◽  
Chia-Wei Chen ◽  
...  

2016 ◽  
Vol 63 (11) ◽  
pp. 4279-4287 ◽  
Author(s):  
Zhongqiang Wang ◽  
Stefano Ambrogio ◽  
Simone Balatti ◽  
Scott Sills ◽  
Alessandro Calderoni ◽  
...  

2015 ◽  
Vol 118 (11) ◽  
pp. 114903 ◽  
Author(s):  
Abhishek A. Sharma ◽  
Ilya V. Karpov ◽  
Roza Kotlyar ◽  
Jonghan Kwon ◽  
Marek Skowronski ◽  
...  

2011 ◽  
Vol 58 (8) ◽  
pp. 2729-2737 ◽  
Author(s):  
Shimeng Yu ◽  
Yi Wu ◽  
Rakesh Jeyasingh ◽  
Duygu Kuzum ◽  
H.-S. Philip Wong

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