Low Resistance Contacts to P-Type GaN
Keyword(s):
ABSTRACTWe report the low resistance ohmic contacts to p-GaN using a Pd/Au bimetal scheme. A specific contact resistivity of 9.1 × 10-3 Ω-cm2 was obtained after annealing. The metallization was e-beam evaporated on 2 μm-thick p-GaN (∼ 9 × 1016/cm3) layers grown on c-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVD). The comparison with other contacts showed that the contact resistivity of the Pd/Au contacts was at least one order smaller than those of Pt/Au and Ni/Au contacts.
2015 ◽
Vol 36
(11)
◽
pp. 1114-1117
◽
2007 ◽
Vol 556-557
◽
pp. 697-700
◽
2007 ◽
Vol 298
◽
pp. 486-490
◽
2014 ◽
Vol 17
(4)
◽
pp. 394-397
Keyword(s):
2018 ◽
Vol 455
◽
pp. 1123-1130
◽