Ultra-shallow junction formation using conventional ion implantation and rapid thermal annealing

2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432) ◽

10.1109/iit.2000.924147 ◽

2003 ◽

Author(s):

A. Agarwal

Keyword(s):

Ion Implantation ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Shallow Junction ◽

Junction Formation

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Ion Implantation and Rapid Thermal Annealing in Synergy for Shallow Junction Formation

phys stat sol (a) ◽

10.1002/pssa.2211580115 ◽

1996 ◽

Vol 158 (1) ◽

pp. 117-136 ◽

Author(s):

W. Lerch

Keyword(s):

Ion Implantation ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Shallow Junction ◽

Junction Formation

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Process interactions between low-energy ion implantation and rapid-thermal annealing for optimized ultrashallow junction formation

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.591212 ◽

2000 ◽

Vol 18 (1) ◽

pp. 462 ◽

Author(s):

A. J. Murrell ◽

E. J. H. Collart ◽

M. A. Foad ◽

D. Jennings

Keyword(s):

Ion Implantation ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Junction Formation ◽

Ultrashallow Junction

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Rapid thermal annealing of spin-coated phosphoric acid films for shallow junction formation

Applied Physics Letters ◽

10.1063/1.119547 ◽

1997 ◽

Vol 71 (3) ◽

pp. 392-394 ◽

Author(s):

S. Sivoththaman ◽

W. Laureys ◽

J. Nijs ◽

R. Mertens

Keyword(s):

Phosphoric Acid ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Shallow Junction ◽

Junction Formation

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Shallow junction formation by boron implantation with energies between 2 and 5 keV and rapid thermal annealing

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ◽

10.1016/0168-583x(89)90306-6 ◽

1989 ◽

Vol 37-38 ◽

pp. 823-827 ◽

Author(s):

R. Kakoschke ◽

K. Ehinger

Keyword(s):

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Shallow Junction ◽

Junction Formation ◽

Boron Implantation

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Ultra-shallow junction formation by spike annealing in a lamp-based or hot-walled rapid thermal annealing system: effect of ramp-up rate

Materials Science in Semiconductor Processing ◽

10.1016/s1369-8001(98)00030-4 ◽

1998 ◽

Vol 1 (3-4) ◽

pp. 237-241 ◽

Author(s):

Aditya Agarwal ◽

Anthony T. Fiory ◽

Hans-Joachim L. Gossmann ◽

Conor S. Rafferty ◽

Peter Frisella

Keyword(s):

Thermal Annealing ◽

Rapid Thermal Annealing ◽

System Effect ◽

Shallow Junction ◽

Junction Formation ◽

Spike Annealing

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Germanium Implantation into Silicon: An Alternate Pre‐Amorphization/Rapid Thermal Annealing Procedure for Shallow Junction Formation

Journal of The Electrochemical Society ◽

10.1149/1.2115733 ◽

1984 ◽

Vol 131 (4) ◽

pp. 943-945 ◽

Author(s):

D. K. Sadana ◽

W. Maszara ◽

J. J. Wortmann ◽

G. A. Rozgonyi ◽

W. K. Chu

Keyword(s):

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Shallow Junction ◽

Junction Formation ◽

Annealing Procedure

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Modeling rapid thermal annealing processes for shallow junction formation in silicon

10.1109/iedm.1983.190593 ◽

1983 ◽

Author(s):

R.B. Fair ◽

J.J. Wo ◽

J. Liu

Keyword(s):

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Shallow Junction ◽

Junction Formation

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N+shallow junction formation using plasma doping and rapid thermal annealing

2007 International Semiconductor Device Research Symposium ◽

10.1109/isdrs.2007.4422355 ◽

2007 ◽

Author(s):

Seong Ho Kong ◽

Ho Jung ◽

Jeong Eun Kim ◽

Seung Woo Do ◽

Jae Geun Oh ◽

...

Keyword(s):

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Shallow Junction ◽

Plasma Doping ◽

Junction Formation

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Gate overlap length reduction and shallow junction formation in high-performance fine MOSFETs by ion implantation through thin oxide film

Electronics Letters ◽

10.1049/el:19981653 ◽

1998 ◽

Vol 34 (25) ◽

pp. 2436

Author(s):

T. Oishi ◽

A. Furukawa ◽

K. Shiozawa ◽

Y. Abe ◽

Y. Tokuda

Keyword(s):

Ion Implantation ◽

High Performance ◽

Shallow Junction ◽

Thin Oxide Film ◽

Junction Formation ◽

Length Reduction

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Properties of the TiSi2/p+nstructures formed by ion implantation through silicide and rapid thermal annealing

Journal of Applied Physics ◽

10.1063/1.352097 ◽

1992 ◽

Vol 72 (1) ◽

pp. 73-77 ◽

Author(s):

H. B. Erzgräber ◽

P. Zaumseil ◽

E. Bugiel ◽

R. Sorge ◽

K. Tittelbach‐Helmrich ◽

...

Keyword(s):

Ion Implantation ◽

Thermal Annealing ◽

Rapid Thermal Annealing

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