Performance analyses and benchmarking for spintronic devices and interconnects

2016 ◽  
Author(s):  
Chenyun Pan ◽  
Sou-Chi Chang ◽  
Azad Naeemi
Keyword(s):  
Spintronic Devices ◽  
Performance Analyses

Non-Boolean Computing with Spintronic Devices

2018 ◽  
Author(s):  
Roxy Kawsher A. ◽  
Sanjukta Bhanja
Keyword(s):  
Spintronic Devices

Performance analyses of the communication networks of a modern supervision and control system of research reactors

Kerntechnik ◽  
2009 ◽  
Vol 74 (1-2) ◽  
pp. 42-46
Author(s):  
E. I. El-Madbouly ◽  
M. K. Shaat ◽  
A. M. Shokr ◽  
G. H. Elrefaei
Keyword(s):  
Control System ◽  
Communication Networks ◽  
Research Reactors ◽  
Performance Analyses ◽  
And Control

Polariton Devices

2017 ◽  
Author(s):  
Alexey V. Kavokin ◽  
Jeremy J. Baumberg ◽  
Guillaume Malpuech ◽  
Fabrice P. Laussy
Keyword(s):  
Semiconductor Devices ◽  
Logic Gates ◽  
Light Sources ◽  
Coherent Light ◽  
Final State ◽  
Spintronic Devices ◽  
Exciton Polaritons ◽  
Terahertz Lasers ◽  
Coherence Lengths ◽  
Stimulation Of

Polariton devices offer multiple advantages compared to conventional semiconductor devices. The bosonic nature of exciton polaritons offers opportunity of realisation of polariton lasers: coherent light sources based on bosonic condensates of polaritons. The final state stimulation of any transition feeding a polariton condensate has been used in many proposals such as for terahertz lasers based on polariton lasers. Furthermore, large coherence lengths of exciton-polaritons in microcavities open the way to realisation of polariton transport devices including transistors and logic gates. Being bosonic spin carriers, exciton-polaritons may be used in spintronic devices and polarisation switches. This chapter offers an overview on the existing proposals for polariton devices.

scholarly journals Reducing Dzyaloshinskii-Moriya interaction and field-free spin-orbit torque switching in synthetic antiferromagnets

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Ruyi Chen ◽  
Qirui Cui ◽  
Liyang Liao ◽  
Yingmei Zhu ◽  
Ruiqi Zhang ◽  
...  
Keyword(s):  
Domain Wall ◽  
Tunnel Junctions ◽  
Low Power Consumption ◽  
Stray Field ◽  
Magnetic Memory ◽  
Spin Orbit ◽  
Theoretic Analysis ◽  
Spintronic Devices ◽  
Deterministic Switching ◽  
Moriya Interaction

AbstractPerpendicularly magnetized synthetic antiferromagnets (SAF), possessing low net magnetization and high thermal stability as well as easy reading and writing characteristics, have been intensively explored to replace the ferromagnetic free layers of magnetic tunnel junctions as the kernel of spintronic devices. So far, utilizing spin-orbit torque (SOT) to realize deterministic switching of perpendicular SAF have been reported while a large external magnetic field is typically needed to break the symmetry, making it impractical for applications. Here, combining theoretic analysis and experimental results, we report that the effective modulation of Dzyaloshinskii-Moriya interaction by the interfacial crystallinity between ferromagnets and adjacent heavy metals plays an important role in domain wall configurations. By adjusting the domain wall configuration between Bloch type and Néel type, we successfully demonstrate the field-free SOT-induced magnetization switching in [Co/Pd]/Ru/[Co/Pd] SAF devices constructed with a simple wedged structure. Our work provides a practical route for utilization of perpendicularly SAF in SOT devices and paves the way for magnetic memory devices with high density, low stray field, and low power consumption.

scholarly journals Synthesis and characterization of [7]triangulene

Nanoscale ◽  
2021 ◽  
Author(s):  
Shantanu Mishra ◽  
Kun Xu ◽  
Kristjan Eimre ◽  
Hartmut Komber ◽  
Ji Ma ◽  
...  
Keyword(s):  
High Spin ◽  
Ground States ◽  
Synthesis And Characterization ◽  
Spintronic Devices

Triangulene and its π-extended homologues constitute non-Kekulé polyradical frameworks with high-spin ground states, and are anticipated to be key components of organic spintronic devices. We report a combined in-solution and...

scholarly journals Manipulation of hot carrier cooling dynamics in two-dimensional Dion–Jacobson hybrid perovskites via Rashba band splitting

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Jun Yin ◽  
Rounak Naphade ◽  
Partha Maity ◽  
Luis Gutiérrez-Arzaluz ◽  
Dhaifallah Almalawi ◽  
...  
Keyword(s):  
Transient Absorption ◽  
Phonon Scattering ◽  
Transient Absorption Spectroscopy ◽  
Band Model ◽  
Two Dimensional ◽  
Spintronic Devices ◽  
Hot Carrier ◽  
Band Splitting ◽  
Perovskite Materials ◽  
Spin Polarized

AbstractHot-carrier cooling processes of perovskite materials are typically described by a single parabolic band model that includes the effects of carrier-phonon scattering, hot phonon bottleneck, and Auger heating. However, little is known (if anything) about the cooling processes in which the spin-degenerate parabolic band splits into two spin-polarized bands, i.e., the Rashba band splitting effect. Here, we investigated the hot-carrier cooling processes for two slightly different compositions of two-dimensional Dion–Jacobson hybrid perovskites, namely, (3AMP)PbI4 and (4AMP)PbI4 (3AMP = 3-(aminomethyl)piperidinium; 4AMP = 4-(aminomethyl)piperidinium), using a combination of ultrafast transient absorption spectroscopy and first-principles calculations. In (4AMP)PbI4, upon Rashba band splitting, the spin-dependent scattering of hot electrons is responsible for accelerating hot-carrier cooling at longer delays. Importantly, the hot-carrier cooling of (4AMP)PbI4 can be extended by manipulating the spin state of the hot carriers. Our findings suggest a new approach for prolonging hot-carrier cooling in hybrid perovskites, which is conducive to further improving the performance of hot-carrier-based optoelectronic and spintronic devices.

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