Integration and performances of an alternative approach using copper silicide as a self-aligned barrier for 45 nm technology node Cu interconnects

2004 ◽  
Author(s):  
L.G. Gosset ◽  
S. Chhun ◽  
A. Farcy ◽  
N. Casanova ◽  
V. Arnal ◽  
...  
Keyword(s):  
Copper Silicide ◽  
Technology Node ◽  
Cu Interconnects ◽  
Alternative Approach

Effects of Cu surface roughness on TDDB for direct polishing ultra-low k dielectric Cu interconnects at 40nm technology node and beyond

2012 ◽  
Vol 92 ◽  
pp. 115-118 ◽  
Author(s):  
W.C. Lin ◽  
Jack Lin ◽  
T.C. Tsai ◽  
C.M. Hsu ◽  
C.C. Liu ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Technology Node ◽  
Cu Interconnects ◽  
Low K

ALD TaN Barrier for Enhanced Performance with Low Contact Resistance for 14nm Technology Node Cu Interconnects

2015 ◽  
Vol 69 (7) ◽  
pp. 161-169 ◽  
Author(s):  
J. Nag ◽  
B. Cohen ◽  
S. Choi ◽  
A. Ogino ◽  
M. Oh ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Technology Node ◽  
Cu Interconnects

V940: Pre-Pubic SPARC for Stress Urinary Incontinence: An Alternative Approach for Scarred Retzius Space

2004 ◽  
Vol 171 (4S) ◽  
pp. 249-249
Author(s):  
Paulo Palma ◽  
Cassio Riccetto ◽  
Marcelo Thiel ◽  
Miriam Dambros ◽  
Rogerio Fraga ◽  
...  
Keyword(s):  
Urinary Incontinence ◽  
Stress Urinary Incontinence ◽  
Alternative Approach
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