Effects of BEOL copper CMP process on TDDB for direct polishing ultra-low k dielectric cu interconnects at 28nm technology node and beyond

2013 ◽  
Author(s):  
Y. L. Hsieh ◽  
W. C. Lin ◽  
Y. M. Lin ◽  
H. K. Hsu ◽  
C. H. Chen ◽  
...  
Keyword(s):  
Technology Node ◽  
Cu Interconnects ◽  
Copper Cmp ◽  
Low K

Effects of Cu surface roughness on TDDB for direct polishing ultra-low k dielectric Cu interconnects at 40nm technology node and beyond

2012 ◽  
Vol 92 ◽  
pp. 115-118 ◽  
Author(s):  
W.C. Lin ◽  
Jack Lin ◽  
T.C. Tsai ◽  
C.M. Hsu ◽  
C.C. Liu ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Technology Node ◽  
Cu Interconnects ◽  
Low K

Electromigration failure mode concerning negative resistance shift of Cu interconnects buried in porous low-k dielectric

2017 ◽  
Vol 110 (8) ◽  
pp. 083502 ◽  
Author(s):  
Hui Zheng ◽  
Binfeng Yin ◽  
Hewei Yu ◽  
Leigang Chen ◽  
Lin Gao ◽  
...  
Keyword(s):  
Failure Mode ◽  
Negative Resistance ◽  
Cu Interconnects ◽  
Low K

High-Performance Extremely Low-k Film Integration Technology with Metal Hard Mask Process for Cu Interconnects

2016 ◽  
Vol 5 (10) ◽  
pp. P578-P583 ◽  
Author(s):  
Naoki Torazawa ◽  
Susumu Matsumoto ◽  
Takeshi Harada ◽  
Yasunori Morinaga ◽  
Daisuke Inagaki ◽  
...  
Keyword(s):  
High Performance ◽  
Hard Mask ◽  
Integration Technology ◽  
Cu Interconnects ◽  
Low K

scholarly journals Electrical and Reliability Characteristics of Self-Forming Barrier for CuNd/SiOCH Films in Cu Interconnects

Coatings ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 155
Author(s):  
Yi-Lung Cheng ◽  
Chih-Yen Lee ◽  
Wei-Fan Peng ◽  
Giin-Shan Chen ◽  
Jau-Shiung Fang
Keyword(s):  
Dielectric Film ◽  
Alloy Film ◽  
Dielectric Films ◽  
Low Dielectric Constant ◽  
Electrical Characteristics ◽  
Sputtering Deposition ◽  
Cu Interconnects ◽  
Low Dielectric ◽  
Reliability Characteristics ◽  
Low K

In this study, Cu-2.2 at. % Nd alloy films using a co-sputtering deposition method were directly deposited onto porous low-dielectric-constant (low-k) films (SiOCH). The effects of CuNd alloy film on the electrical properties and reliability of porous low-k dielectric films were studied. The electrical characteristics and reliability of the porous low-k dielectric film with CuNd alloy film were enhanced by annealing at 425 °C. The formation of self-forming barrier at the CuNd/SiOCH interface was responsible for this improvement. Therefore, integration with CuNd and porous low-k dielectric is a promising process for advanced Cu interconnects.

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