Film Characterization of Cu diffusion barrier dielectrics for 90 nm and 65 nm technology node Cu interconnects

Author(s):  
K. Goto ◽  
H. Yuasa ◽  
A. Andatsu ◽  
M. Matsuura
2021 ◽  
Vol 42 (5) ◽  
pp. 731-734
Author(s):  
Stephane Moreau ◽  
Herve Manzanarez ◽  
Nicolas Bernier ◽  
Joris Jourdon ◽  
Sandrine Lhostis ◽  
...  

2016 ◽  
Vol 16 (10) ◽  
pp. 10908-10912 ◽  
Author(s):  
Min-Soo Kang ◽  
Jae-Hyung Park ◽  
Dong-Suk Han ◽  
Hyeong-Tag Jeon ◽  
Jong-Wan Park

2012 ◽  
Vol 258 (18) ◽  
pp. 7225-7230 ◽  
Author(s):  
Kuo-Chung Hsu ◽  
Dung-Ching Perng ◽  
Jia-Bin Yeh ◽  
Yi-Chun Wang

2014 ◽  
Vol 1052 ◽  
pp. 163-168 ◽  
Author(s):  
Xiao Na Li ◽  
Lu Jie Jin ◽  
Li Rong Zhao ◽  
Chuang Dong

Thermal stability, adhesion and electronic resistivity of the Cu alloy films with diffusion barrier elements (large atom Sn and small atom C) have been studied. Ternary Cu (0.6 at.% Sn, 2 at.% C) films were prepared by magnetron co-sputtering in this work. The microstructure and resistivity analysis on the films showed that the Cu (0.6 at.% Sn, 2 at.% C) film had better adhesion with the substrate and lower resistivity (2.8 μΩ·cm, after annealing at 600 °C for 1 h). Therefore, the doping of carbon atoms makes less effect to the resistivity by decreasing the amount of the doped large atoms, which results in the decreasing of the whole resistivity of the barrierless structure. After annealing, the doped elements in the film diffused to the interface to form self-passivated amorphous layer, which could further hinder the diffusion between Cu and Si. So thus ternary Cu (0.6 at.% Sn, 2 at.% C) film had better diffusion barrier effect. Co-doping of large atoms and small atoms in the Cu film is a promising way to improve the barrierless structure.


1995 ◽  
Vol 391 ◽  
Author(s):  
W.F. Mcarthur ◽  
K.M. Ring ◽  
K.L. Kavanagh

AbstractThe feasibility of Si-implanted TiN as a diffusion barrier between Cu and Si was investigated. Barrier effectiveness was evaluated via reverse leakage current of Cu/TixSiyNz/Si diodes as a function of post-deposition annealing temperature and time, and was found to depend heavily on the film composition and microstructure. TiN implanted with Si28, l0keV, 5xl016ions/cm2 formed an amorphous ternary TixSiyNz layer whose performance as a barrier to Cu diffusion exceeded that of unimplanted, polycrystalline TiN. Results from current-voltage, transmission electron microscopy (TEM), and Auger depth profiling measurements will be presented. The relationship between Si-implantation dose, TixSiyNz structure and reverse leakage current of Cu/TixSiyNz/Si diodes will be discussed, along with implications as to the suitability of these structures in Cu metallization.


2013 ◽  
Vol 17 (sup1) ◽  
pp. 70-74
Author(s):  
C. H. Liu ◽  
Y. Z. Jin ◽  
X. J. Cui ◽  
R. S. Yang ◽  
Q. S. Fu ◽  
...  

2011 ◽  
Vol 2011 (1) ◽  
pp. 000152-000160 ◽  
Author(s):  
Maaike Op de Beeck ◽  
Karen Qian ◽  
Paolo Fiorini ◽  
Karl Malachowski ◽  
Chris Van Hoof

A biocompatible packaging process for implantable electronic systems is described, combining biocompatibility and hermeticity with extreme miniaturization. In a first phase of the total packaging sequence, all chips are encapsulated in order to realize a bi-directional diffusion barrier preventing body fluids to leach into the package causing corrosion, and preventing IC materials such as Cu to diffuse into the body, causing various adverse effects. For cost effectiveness, this hermetic chip sealing is performed as post-processing at wafer level, using modifications of standard clean room (CR) fabrication techniques. Well known conductive and insulating CR materials are investigated with respect to their biocompatibility, diffusion barrier properties and sensitivity to corrosion. In a second phase of the packaging process, all chips of the final device should be electrically connected, applying a biocompatible metallization scheme using eg. gold or platinum. For electrodes being in direct contact with the tissue after implantation, IrOx metallization is proposed. Device assembly is the final packaging step, during which all system components such as electronics, passives, a battery,… will be interconnected. To provide sufficient mechanical support, all these components are embedded using a biocompatible elastomer such as PDMS.


2012 ◽  
Vol 521 ◽  
pp. 73-77 ◽  
Author(s):  
Tae-Kwang Eom ◽  
Windu Sari ◽  
Taehoon Cheon ◽  
Soo-Hyun Kim ◽  
Woo Kyoung Kim

Sign in / Sign up

Export Citation Format

Share Document