Cu / Barrier Metal Stack Film Characterization for Reliability Estimation

Author(s):  
Shinichi Ogawa ◽  
Toshiyuki Ohdaira ◽  
Nobuki Hosoi ◽  
Nobuaki Tarumi ◽  
Ryoichi Suzuki ◽  
...  
Author(s):  
Richard G. Sartore

In the evaluation of GaAs devices from the MMIC (Monolithic Microwave Integrated Circuits) program for Army applications, there was a requirement to obtain accurate linewidth measurements on the nominal 0.5 micrometer gate lengths used to fabricate these devices. Preliminary measurements indicated a significant variation (typically 10 % to 30% but could be more) in the critical dimensional measurements of the gate length, gate to source distance and gate to drain distance. Passivation introduced a margin of error, which was removed by plasma etching. Additionally, the high aspect ratio (4-5) of the thick gold (Au) conductors also introduced measurement difficulties. The final measurements were performed after the thick gold conductor was removed and only the barrier metal remained, which was approximately 250 nanometer thick platinum on GaAs substrate. The thickness was measured using the penetration voltage method. Linescan of the secondary electron signal as it scans across the gate is shown in Figure 1.


Methodology ◽  
2012 ◽  
Vol 8 (2) ◽  
pp. 71-80 ◽  
Author(s):  
Juan Botella ◽  
Manuel Suero

In Reliability Generalization (RG) meta-analyses, the importance of bearing in mind the problems of range restriction or biased sampling and their influence on reliability estimation has often been highlighted. Nevertheless, the presence of heterogeneous variances in the included studies has been diagnosed in a subjective way and has not been taken into account in later analyses. Procedures to detect the presence of a variety of sampling schemes and to manage them in the analyses are proposed. The procedures are further explained with an example, by applying them to 25 estimates of Cronbach’s alpha coefficient in the Hamilton Scale for Depression.


AIAA Journal ◽  
1998 ◽  
Vol 36 ◽  
pp. 1509-1515 ◽  
Author(s):  
Gerhard S. Szekely ◽  
Christoph E. Brenner ◽  
Helmut J. Pradlwarter ◽  
Gerhart I. Schueller ◽  
Wolfgang H. Teichert ◽  
...  

Author(s):  
DongKwon Jeong ◽  
JuHyeon Ahn ◽  
SangIn Lee ◽  
JooHyuk Chung ◽  
ByungLyul Park ◽  
...  

Abstract This paper presents the problems, the solutions, and the development state of the novel 0.18 μm Cu Metal Process through failure analysis of the Alpha CPU under development at Samsung Electronics. The presented problems include : “Via Bottom Lifting” induced by the Cu Via void, “Via Bottom dissociation” due to the IMD stress, “Via side dissociation” due to the poor formation of the Barrier Metal, “Via short/not-open failure” due to the IMD lifting, and Cu metal Corrosion/Loss. The analysis was carried out on the Via Contact Test Chain Patterns, using the “Electron (ION) Charge Up” method. After carefully analyzing each of the failure types, process improvement efforts followed. As a result, the pass rate of the via contact Rc was brought up from a mere 20% to 95%, and the device speed higher than 1.1 GHz was achieved, which surpasses the target speed of 1 GHz.


2017 ◽  
Vol 73 (5) ◽  
Author(s):  
G. Krishna Mohan ◽  
R. Satyaprasad ◽  
N. V. K. Stanley Raju

2019 ◽  
pp. 57-63
Author(s):  
M. A. Artyukhova ◽  
S. N. Polesskiy

Human activity is often accompanied by exposure of ionizing radiation: the exploitation of space systems and power plants, research using isotopic sources, medicine. The development of electronic equipment is regulated by carrying out activities to ensure the required reliability and radiation resistance. However, the effect of ionizing radiation on reliability indicators is not taken into account properly, or is not taken into account at all, that sometimes leads to the loss of expensive equipment and even to human victims. The article discusses the methodology for carrying out an adequate estimate of the reliability considering the influence of external influencing factors, including ionizing radiation. The timeliness of decisions making to ensure the required reliability indicators is determined by the completeness of the reliability estimation at the design stage. Effort to ensure the reliability and durability of devices after the design stage is not economically viable. The completeness and adequacy of the estimation always depends on the interaction of specialists in different fields: designers, programmers, experts in the field of circuit design, electrical engineering and experts in the field of reliability and radiation resistance.


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