Advances in the Super-Lattice Castellated Field Effect Transistor (SLCFET) for High Power Density, Energy Efficient RF Amplification

An improved ultrahigh upper gate 4H-SiC metal semiconductor field effect transistor (IUU-MESFET) is proposed in this paper. The structure is obtained by modifying the ultrahigh upper gate height h of the ultrahigh upper gate 4H-SiC metal semiconductor field effect transistor (UU-MESFET) structure, and the h is 0.1 μm and 0.2 μm for the IUU-MESFET and UU-MESFET, respectively. Compared with the UU-MESFET, the IUU-MESFET structure has a greater threshold voltage and trans-conductance, and smaller breakdown voltage and saturation drain current, and when the ultrahigh upper gate height h is 0.1 μm, the relationship between these parameters is balanced, so as to solve the contradictory relationship that these parameters cannot be improved simultaneously. Therefore, the power added efficiency (PAE) of the IUU-MESFET structure is increased from 60.16% to 70.99% compared with the UU-MESFET, and advanced by 18%.

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Simulation analysis of a novel dual-trench structure for a high power silicon-on-insulator metal–semiconductor field effect transistor

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2014.05.040 ◽

2014 ◽

Vol 26 ◽

pp. 506-511 ◽

Cited By ~ 5

Author(s):

Ali A. Orouji ◽

Hadi Shahnazarisani ◽

Mohammad K. Anvarifard

Keyword(s):

High Power ◽

Field Effect ◽

Field Effect Transistor ◽

Simulation Analysis ◽

Silicon On Insulator ◽

Trench Structure ◽

Effect Transistor

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Simulation of high power step-buffer 4H silicon carbide metal semiconductor field effect transistor

2018 International Conference on Electronics Technology (ICET) ◽

10.1109/eltech.2018.8401426 ◽

2018 ◽

Author(s):

Xianjun Zhang ◽

Mingjia Wang

Keyword(s):

Silicon Carbide ◽

High Power ◽

Field Effect ◽

Field Effect Transistor ◽

Effect Transistor

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High-power microwave 0.25-μm gate doped-channel GaN/AlGaN heterostructure field effect transistor

IEEE Electron Device Letters ◽

10.1109/55.658598 ◽

1998 ◽

Vol 19 (2) ◽

pp. 44-46 ◽

Cited By ~ 81

Author(s):

Q. Chen ◽

J.W. Yang ◽

R. Gaska ◽

M.A. Khan ◽

M.S. Shur ◽

...

Keyword(s):

High Power ◽

Field Effect ◽

Field Effect Transistor ◽

High Power Microwave ◽

Effect Transistor ◽

Power Microwave

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Improved MRD 4H-SiC MESFET with High Power Added Efficiency

Micromachines ◽

10.3390/mi10070479 ◽

2019 ◽

Vol 10 (7) ◽

pp. 479 ◽

Cited By ~ 3

Author(s):

Shunwei Zhu ◽

Hujun Jia ◽

Xingyu Wang ◽

Yuan Liang ◽

Yibo Tong ◽

...

Keyword(s):

Radio Frequency ◽

Buffer Layer ◽

High Power ◽

Computer Aided Design ◽

Field Effect ◽

Field Effect Transistor ◽

Design System ◽

Power Added Efficiency ◽

Effect Transistor ◽

Rf Performance

An improved multi-recessed double-recessed p-buffer layer 4H–SiC metal semiconductor field effect transistor (IMRD 4H-SiC MESFET) with high power added efficiency is proposed and studied by co-simulation of advanced design system (ADS) and technology computer aided design (TCAD) Sentaurus software in this paper. Based on multi-recessed double-recessed p-buffer layer 4H–SiC metal semiconductor field effect transistor (MRD 4H-SiC MESFET), the recessed area of MRD MESFET on both sides of the gate is optimized, the direct current (DC), radio frequency (RF) parameters and efficiency of the device is balanced, and the IMRD MESFET with a best power-added efficiency (PAE) is finally obtained. The results show that the PAE of the IMRD MESFET is 68.33%, which is 28.66% higher than the MRD MESFET, and DC and RF performance have not dropped significantly. Compared with the MRD MESFET, the IMRD MESFET has a broader prospect in the field of microwave radio frequency.

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