Magnetic properties of manganese germanium diphosphide and manganese phosphide grown by molecular beam epitaxy technique

2005 ◽  
Author(s):  
K. Minami ◽  
J. Jogo ◽  
M. Mori ◽  
T. Ishibashi ◽  
K. Sato
Keyword(s):  
Magnetic Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam

scholarly journals Molecular beam epitaxy growth of Mn4−Ni N thin films on MgO(0 0 1) substrates and their magnetic properties

2019 ◽  
Vol 507 ◽  
pp. 163-167 ◽  
Author(s):  
Taro Komori ◽  
Akihito Anzai ◽  
Toshiki Gushi ◽  
Kaoru Toko ◽  
Takashi Suemasu
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Growth

scholarly journals Aluminum nitride doped with transition metal group atoms as a material for spintronics

2020 ◽  
pp. 162-172
Author(s):  
S.S. Khludkov ◽  
◽  
I.A. Prudaev ◽  
L.O. Root ◽  
O.P. Tolbanov ◽  
...  
Keyword(s):  
Experimental Data ◽  
Magnetic Properties ◽  
Molecular Beam Epitaxy ◽  
Transition Metal ◽  
Aluminum Nitride ◽  
Room Temperature ◽  
Molecular Beam ◽  
Scientific Literature ◽  
Material Growth ◽  
Metal Group

Aluminum nitride doped with transition metal group atoms as a material for spintronics The overview of scientific literature on electric and magnetic properties of AlN doped with transition metal group atoms is presented. The review is based on literature sources published mainly in the last 10 years. The doping was carried out by different methods: during the material growth (molecular beam epitaxy, magnetron sputtering, discharge techniques) or by implantation into the material. The presented theoretical and experimental data show that AlN doped with transition metal group atoms has ferromagnetic properties at temperatures above room temperature and it is a promising material for spintronics.

Magnetic Properties of Mn Doped GaN Grown Using Single GaN Precursor via Molecular Beam Epitaxy

2009 ◽  
Vol 54 (2) ◽  
pp. 633-636 ◽  
Author(s):  
C. X. Gao ◽  
F. C. Yu ◽  
D. J. Kim ◽  
H. J. Kim ◽  
Y. E. Ihm ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Mn Doped

Structure and Magnetic Properties of (In,Mn)As Based Core-Shell Nanowires Grown on Si(111) by Molecular-Beam Epitaxy

2014 ◽  
Vol 31 (7) ◽  
pp. 078103 ◽  
Author(s):  
Dong Pan ◽  
Si-Liang Wang ◽  
Hai-Long Wang ◽  
Xue-Zhe Yu ◽  
Xiao-Lei Wang ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Core Shell ◽  
Shell Nanowires

Unusual Magnetic Properties of Fe/Ni Bilayers on Cu(100)

2000 ◽  
Vol 648 ◽  
Author(s):  
B. Schirmer ◽  
X. Liu ◽  
M. Wuttig
Keyword(s):  
Magnetic Properties ◽  
Surface Layer ◽  
Molecular Beam Epitaxy ◽  
Exchange Coupling ◽  
Molecular Beam ◽  
Interface Layer ◽  
Temperature Dependent ◽  
Iron Films ◽  
Magnetic Phases ◽  
Rich Variety

AbstractUltrathin iron films grown on Cu(100) have been found to exhibit a rich variety of structural and magnetic phases. In the present work, Fe/Ni bilayers have been prepared by molecular beam epitaxy to explore novel magnetic phenomena introduced by the ferromagnetic (FM) Ni underlayer. Unusual properties have been observed by measuring the temperature dependent magnetic properties. For 5.3 ML Fe on 7 ML Ni, a temperature dependent exchange coupling in the Fe film has been observed between the FM surface layer and FM interface layer.

Ferromagnetism in lightly Gd doped GaN: The role of defects

2011 ◽  
Vol 1290 ◽  
Author(s):  
J. K. Mishra ◽  
S. Dhar ◽  
M. A. Khaderabad ◽  
O. Brandt
Keyword(s):  
Magnetic Properties ◽  
Molecular Beam Epitaxy ◽  
Saturation Magnetization ◽  
Magnetic Moment ◽  
Molecular Beam ◽  
Defect Density ◽  
Defect Cluster ◽  
Clear Correlation ◽  
Defect Band

ABSTRACTGd:GaN layers grown with different Gd concentrations by molecular beam epitaxy (MBE) are studied using photoconductivity and photo-thermoelectric power spectroscopy. Our study reveals that the incorporation of Gd produces a large concentration of acceptor-like defects in the GaN lattice. The defect band is found to be located ~450meV above the valence band. Moreover, the concentration of defects is found to increase with the Gd concentration. The effect of annealing on the structural and the magnetic properties of GaN implanted with Gd is also investigated. A clear correlation between the saturation magnetization and the defect density is observed in implanted samples. The colossal magnetic moment per Gd ion and the ferromagnetism observed in this material is explained in terms of the formation of giant defect cluster around each Gd ion.

Molecular beam epitaxy and magnetic properties of EuS films on silicon

1982 ◽  
Vol 28 (3) ◽  
pp. 305-312 ◽  
Author(s):  
B. Saftić ◽  
N. Rašula ◽  
W. Zinn ◽  
J. Chevallier
Keyword(s):  
Magnetic Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam

Two Dimensional Magnetic Properties of PdFe Layers

1995 ◽  
Vol 384 ◽  
Author(s):  
F. Petroff ◽  
V. Cros ◽  
A. Fert ◽  
S. Lamolle ◽  
M. Wiedmann ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Molecular Beam Epitaxy ◽  
Applied Field ◽  
Molecular Beam ◽  
Two Dimensional ◽  
Logarithmic Dependence

ABSTRACTWe have studied the magnetic properties of very thin PdFe films grown by molecular beam epitaxy. The behavior expected for a 2D Heisenberg system - that is a variation of the susceptibility as exp(B/T) and a logarithmic dependence of the magnetization on the applied field - is observed in a certain range of temperature and field. This is in agreement with recent results of Webb et al [1].

Magnetic properties of Cu-doped GaN grown by molecular beam epitaxy

2012 ◽  
Vol 85 (16) ◽  
Author(s):  
Philipp R. Ganz ◽  
Gerda Fischer ◽  
Christoph Sürgers ◽  
Daniel M. Schaadt
Keyword(s):  
Magnetic Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam
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