Two Dimensional Magnetic Properties of PdFe Layers

1995 ◽  
Vol 384 ◽  
Author(s):  
F. Petroff ◽  
V. Cros ◽  
A. Fert ◽  
S. Lamolle ◽  
M. Wiedmann ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Molecular Beam Epitaxy ◽  
Applied Field ◽  
Molecular Beam ◽  
Two Dimensional ◽  
Logarithmic Dependence

ABSTRACTWe have studied the magnetic properties of very thin PdFe films grown by molecular beam epitaxy. The behavior expected for a 2D Heisenberg system - that is a variation of the susceptibility as exp(B/T) and a logarithmic dependence of the magnetization on the applied field - is observed in a certain range of temperature and field. This is in agreement with recent results of Webb et al [1].

scholarly journals Molecular beam epitaxy growth of Mn4−Ni N thin films on MgO(0 0 1) substrates and their magnetic properties

2019 ◽  
Vol 507 ◽  
pp. 163-167 ◽  
Author(s):  
Taro Komori ◽  
Akihito Anzai ◽  
Toshiki Gushi ◽  
Kaoru Toko ◽  
Takashi Suemasu
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Growth

GaSb layers with low defect density deposited on (001) GaAs substrate in two-dimensional growth mode using molecular beam epitaxy

2019 ◽  
Vol 19 (4) ◽  
pp. 542-547
Author(s):  
Agata Jasik ◽  
Iwona Sankowska ◽  
Andrzej Wawro ◽  
Jacek Ratajczak ◽  
Dariusz Smoczyński ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Gaas Substrate ◽  
Molecular Beam ◽  
Defect Density ◽  
Growth Mode ◽  
Two Dimensional ◽  
Dimensional Growth

scholarly journals Aluminum nitride doped with transition metal group atoms as a material for spintronics

2020 ◽  
pp. 162-172
Author(s):  
S.S. Khludkov ◽  
◽  
I.A. Prudaev ◽  
L.O. Root ◽  
O.P. Tolbanov ◽  
...  
Keyword(s):  
Experimental Data ◽  
Magnetic Properties ◽  
Molecular Beam Epitaxy ◽  
Transition Metal ◽  
Aluminum Nitride ◽  
Room Temperature ◽  
Molecular Beam ◽  
Scientific Literature ◽  
Material Growth ◽  
Metal Group

Aluminum nitride doped with transition metal group atoms as a material for spintronics The overview of scientific literature on electric and magnetic properties of AlN doped with transition metal group atoms is presented. The review is based on literature sources published mainly in the last 10 years. The doping was carried out by different methods: during the material growth (molecular beam epitaxy, magnetron sputtering, discharge techniques) or by implantation into the material. The presented theoretical and experimental data show that AlN doped with transition metal group atoms has ferromagnetic properties at temperatures above room temperature and it is a promising material for spintronics.

Magnetic Properties of Mn Doped GaN Grown Using Single GaN Precursor via Molecular Beam Epitaxy

2009 ◽  
Vol 54 (2) ◽  
pp. 633-636 ◽  
Author(s):  
C. X. Gao ◽  
F. C. Yu ◽  
D. J. Kim ◽  
H. J. Kim ◽  
Y. E. Ihm ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Mn Doped

Structure and Magnetic Properties of (In,Mn)As Based Core-Shell Nanowires Grown on Si(111) by Molecular-Beam Epitaxy

2014 ◽  
Vol 31 (7) ◽  
pp. 078103 ◽  
Author(s):  
Dong Pan ◽  
Si-Liang Wang ◽  
Hai-Long Wang ◽  
Xue-Zhe Yu ◽  
Xiao-Lei Wang ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Core Shell ◽  
Shell Nanowires
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