Aluminum nitride doped with transition metal group atoms as a material for spintronics

Aluminum nitride doped with transition metal group atoms as a material for spintronics The overview of scientific literature on electric and magnetic properties of AlN doped with transition metal group atoms is presented. The review is based on literature sources published mainly in the last 10 years. The doping was carried out by different methods: during the material growth (molecular beam epitaxy, magnetron sputtering, discharge techniques) or by implantation into the material. The presented theoretical and experimental data show that AlN doped with transition metal group atoms has ferromagnetic properties at temperatures above room temperature and it is a promising material for spintronics.

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Formation of aluminum nitride films on GaAs(110) at room temperature by reactive molecular‐beam epitaxy: X‐ray and soft x‐ray photoemission spectroscopy

Journal of Applied Physics ◽

10.1063/1.346811 ◽

1990 ◽

Vol 68 (2) ◽

pp. 586-590 ◽

Cited By ~ 23

Author(s):

H.‐U. Baier ◽

W. Mönch

Keyword(s):

Molecular Beam Epitaxy ◽

Aluminum Nitride ◽

Room Temperature ◽

Molecular Beam ◽

Photoemission Spectroscopy ◽

X Ray

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Room-temperature ferromagnetism in (Mn, N)-codoped TiO2 films grown by plasma assisted molecular beam epitaxy

Journal of Applied Physics ◽

10.1063/1.3006135 ◽

2008 ◽

Vol 104 (9) ◽

pp. 093914 ◽

Cited By ~ 9

Author(s):

X. Y. Li ◽

S. X. Wu ◽

L. M. Xu ◽

Y. J. Liu ◽

X. J. Xing ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Room Temperature ◽

Molecular Beam ◽

Room Temperature Ferromagnetism ◽

Tio2 Films ◽

Codoped Tio2

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Room-Temperature Wafer Bonded Multi-Junction Solar Cell Grown by Solid State Molecular Beam Epitaxy

MRS Advances ◽

10.1557/adv.2016.429 ◽

2016 ◽

Vol 1 (43) ◽

pp. 2907-2916 ◽

Cited By ~ 3

Author(s):

Shulong Lu ◽

Shiro Uchida

Keyword(s):

Solar Cell ◽

Molecular Beam Epitaxy ◽

Wafer Bonding ◽

Room Temperature ◽

Molecular Beam ◽

Short Circuit ◽

Short Circuit Current ◽

Short Circuit Current Density ◽

Device Structure ◽

Junction Solar Cell

ABSTRACTWe studied the InGaP/GaAs//InGaAsP/InGaAs four-junction solar cells grown by molecular beam epitaxy (MBE), which were fabricated by the novel wafer bonding. In order to reach a higher conversion efficiency at highly concentrated illumination, heat generation should be minimized. We have improved the device structure to reduce the thermal and electrical resistances. Especially, the bond resistance was reduced to be the lowest value of 2.5 × 10-5 Ohm cm2 ever reported for a GaAs/InP wafer bond, which was obtained by the specific combination of p+-GaAs/n-InP bonding and by using room-temperature wafer bonding. Furthermore, in order to increase the short circuit current density (Jsc) of 4-junction solar cell, we have developed the quality of InGaAsP material by increasing the growth temperature from 490 °C to 510 °C, which leads to a current matching. In a result, an efficiency of 42 % at 230 suns of the four-junction solar cell fabricated by room-temperature wafer bonding was achieved.

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From Adatom Migration to Chemical Kinetics: Models for MBE, Mombe and MOCVD

MRS Proceedings ◽

10.1557/proc-312-3 ◽

1993 ◽

Vol 312 ◽

Cited By ~ 1

Author(s):

D. D. Vvedensky ◽

T. Shitarat ◽

P. Smilauer ◽

T. Kaneko ◽

A. Zangwill

Keyword(s):

Experimental Data ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Chemical Vapor ◽

High Energy ◽

Atomic Scale ◽

Basic Model ◽

Mobile Species ◽

Local Environments ◽

Starting Point

AbstractThe application of Monte Carlo simulations to various epitaxial growth methods is examined from the standpoint of incorporating only those kinetics processes that are required to explain experimental data. A basic model for molecular-beam epitaxy (MBE) is first introduced and some of the features that make it suitable for describing atomic-scale processes are pointed out. Extensions of this model for cases where the atomic constituents of the growing surface are delivered in the form of heteroatomic molecules are then considered. The experimental scenarios that is discussed is the homoepitaxy of GaAs(001) using metalorganic molecular-beam epitaxy (MOMBE) with triethylgallium (TEG) and precursors and using MOCVD with trimethylgallium (TMG). For MOMBE, the comparisons between simulations and experiments are based on reflection high-energy electron diffraction intensities, by analogy with comparisons made for MBE, while for metalorganic chemical vapor deposition (MOCVD) the simulations are compared to in situ glancingincidence x-ray scattering measurements. In both of these cases, the inclusion of a second mobile species to represent the precursor together with various rules for the decomposition of this molecule (in terms of rates and local environments) with be shown to provide a useful starting point for explaining the general trends in the experimental data and for further refinements of the model.

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Comparison of the Optical Properties of Er3+ Doped Gallium Nitride Prepared by Metalorganic Molecular Beam Epitaxy (MOMBE) and Solid Source Molecular Beam Epitaxy (SSMBE)

MRS Proceedings ◽

10.1557/proc-595-f99w11.65 ◽

1999 ◽

Vol 595 ◽

Cited By ~ 1

Author(s):

U. Hömmerich ◽

J. T. Seo ◽

J. D. MacKenzie ◽

C. R. Abernathy ◽

R. Birkhahn ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Excited States ◽

Room Temperature ◽

Molecular Beam ◽

Average Lifetime ◽

Green Luminescence ◽

Si Substrates ◽

Lifetime Analysis ◽

Metalorganic Molecular Beam Epitaxy ◽

Er Doped

AbstractWe report on the luminescence properties of Er doped GaN grown prepared by metalorganic molecular beam epitaxy (MOMBE) and solid-source molecular beam epitaxy (SSMBE) on Si substrates. Both types of samples emitted characteristic 1.54 µm PL resulting from the intra-4f Er3+ transition 4I13/2→4I15/2. Under below-gap excitation the samples exhibited very similar 1.54 µm PL intensities. On the contrary, under above-gap excitation GaN: Er (SSMBE) showed ∼80 times more intense 1.54 µm PL than GaN: Er (MOMBE). In addition, GaN: Er (SSMBE) also emitted intense green luminescence at 537 nm and 558 nm, which was not observed from GaN: Er (MOMBE). The average lifetime of the green PL was determined to be 10.8 µs at 15 K and 5.5 µs at room temperature. A preliminary lifetime analysis suggests that the decrease in lifetime is mainly due to the strong thermalization between the 2H11/2 and 4S3/2 excited states. Nonradiative decay processes are expected to only weakly affect the green luminescence.

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Molecular beam epitaxy growth of Mn4−Ni N thin films on MgO(0 0 1) substrates and their magnetic properties

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2018.11.019 ◽

2019 ◽

Vol 507 ◽

pp. 163-167 ◽

Cited By ~ 7

Author(s):

Taro Komori ◽

Akihito Anzai ◽

Toshiki Gushi ◽

Kaoru Toko ◽

Takashi Suemasu

Keyword(s):

Thin Films ◽

Magnetic Properties ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Molecular Beam Epitaxy Growth

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Piezoelectric Coefficients of Aluminum Nitride and Gallium Nitride

MRS Proceedings ◽

10.1557/proc-572-389 ◽

1999 ◽

Vol 572 ◽

Author(s):

C. M. Lueng ◽

H. L. W. Chan ◽

W. K. Fong ◽

C. Surya ◽

C. L. Choy

Keyword(s):

Thin Films ◽

Gallium Nitride ◽

High Temperature ◽

Molecular Beam Epitaxy ◽

Aluminum Nitride ◽

Composite Film ◽

High Frequency ◽

Molecular Beam ◽

Silicon Substrates ◽

Heterodyne Interferometer

ABSTRACTAluminum nitride (AlN) and gallium nitride (GaN) thin films have potential uses in high temperature, high frequency (e.g. microwave) acoustic devices. In this work, the piezoelectric coefficients of wurtzite AlN and GaN/AlN composite film grown on silicon substrates by molecular beam epitaxy were measured by a Mach-Zehnder type heterodyne interferometer. The effects of the substrate on the measured coefficients are discussed.

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