Microstructure related quantum conductance in Mn-doped ZnO resistive switching memory

2015 ◽  
Author(s):  
S. Ren ◽  
J. Dong ◽  
L. Zhang ◽  
Y. Huang ◽  
J. Guo ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Quantum Conductance ◽  
Resistive Switching Memory ◽  
Doped Zno ◽  
Mn Doped ◽  
Switching Memory

scholarly journals The role of oxygen vacancies in the high cycling endurance and quantum conductance in BiVO 4 ‐based resistive switching memory

InfoMat ◽  
2020 ◽  
Vol 2 (5) ◽  
pp. 960-967 ◽  
Author(s):  
Mengting Zhao ◽  
Xiaobing Yan ◽  
Long Ren ◽  
Mengliu Zhao ◽  
Fei Guo ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Oxygen Vacancies ◽  
Quantum Conductance ◽  
Resistive Switching Memory ◽  
Switching Memory

A persistently increasing resistance ratio and repeatable non-volatile memory in AZO/CZTSe/FTO resistive switching devices

2018 ◽  
Vol 11 (02) ◽  
pp. 1850023 ◽  
Author(s):  
Pingping Zheng ◽  
Xuejiao Zhang ◽  
Bai Sun ◽  
Shuangsuo Mao ◽  
Shouhui Zhu ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Sandwich Structure ◽  
Resistance Ratio ◽  
Resistive Switching Memory ◽  
Non Volatile Memory ◽  
Doped Zno ◽  
Volatile Memory ◽  
Memory Applications ◽  
First Time ◽  
Switching Memory

In this paper, the Cu2ZnSnSe4 (CZTSe) film was deposited on the fluorine-doped SnO2 (FTO), and Al-doped ZnO (AZO) and FTO act as top and bottom electrodes for constructing a sandwich structure, in which the AZO/CZTSe/FTO device not only represents outstanding non-volatile resistive switching memory behavior, but also shows a persistently increasing resistance ratio phenomenon for the first time. This work reveals that the device based on CZTSe film holds an excellent memory effect for non-volatile memory applications in the electronic equipment.

Influence of surface null potential on nonvolatile bistable resistive switching memory behavior of dilutely aluminum doped ZnO thin film

2013 ◽  
Vol 102 (24) ◽  
pp. 243501 ◽  
Author(s):  
Mandar M. Shirolkar ◽  
Changshan Hao ◽  
Shiliu Yin ◽  
Ming Li ◽  
Haiqian Wang
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Zno Thin Film ◽  
Resistive Switching Memory ◽  
Doped Zno ◽  
Switching Memory

Transparent bipolar resistive switching memory devices based on Mn doped SnO2 films

2014 ◽  
Vol 602 ◽  
pp. 175-179 ◽  
Author(s):  
Xinghui Wu ◽  
Zhimou Xu ◽  
Fei Zhao ◽  
Xiaohua Xu ◽  
Binbing Liu ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Memory Devices ◽  
Bipolar Resistive Switching ◽  
Resistive Switching Memory ◽  
Mn Doped ◽  
Switching Memory

scholarly journals Band tailoring by annealing and current conduction of Co-doped ZnO transparent resistive switching memory

2021 ◽  
Vol 1034 (1) ◽  
pp. 012140
Author(s):  
Debashis Panda ◽  
Firman Mangasa Simanjuntak ◽  
Alaka Pradhan ◽  
Femiana Gapsari ◽  
Themis Prodromakis
Keyword(s):  
Resistive Switching ◽  
Resistive Switching Memory ◽  
Current Conduction ◽  
Doped Zno ◽  
Co Doped ◽  
Switching Memory

Al-doped ZnO as a switching layer for transparent bipolar resistive switching memory

2014 ◽  
Vol 10 (2) ◽  
pp. 321-324 ◽  
Author(s):  
Hyeongwoo Yu ◽  
Minho Kim ◽  
Yoonsu Kim ◽  
Jeongsup Lee ◽  
Kyoung-Kook Kim ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Bipolar Resistive Switching ◽  
Resistive Switching Memory ◽  
Doped Zno ◽  
Switching Memory ◽  
Switching Layer
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