Al-doped ZnO as a switching layer for transparent bipolar resistive switching memory

2014 ◽  
Vol 10 (2) ◽  
pp. 321-324 ◽  
Author(s):  
Hyeongwoo Yu ◽  
Minho Kim ◽  
Yoonsu Kim ◽  
Jeongsup Lee ◽  
Kyoung-Kook Kim ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Bipolar Resistive Switching ◽  
Resistive Switching Memory ◽  
Doped Zno ◽  
Switching Memory ◽  
Switching Layer

Self-rectifying bipolar resistive switching memory based on an iron oxide and graphene oxide hybrid

Nanoscale ◽  
2017 ◽  
Vol 9 (40) ◽  
pp. 15314-15322 ◽  
Author(s):  
Se-I Oh ◽  
Janardhanan R. Rani ◽  
Sung-Min Hong ◽  
Jae-Hyung Jang
Keyword(s):  
Graphene Oxide ◽  
Iron Oxide ◽  
Resistive Switching ◽  
Bipolar Resistive Switching ◽  
Solution Processed ◽  
Resistive Switching Memory ◽  
Switching Memory

A solution-processed FeOx–GO hybrid based RRAM device with excellent self-rectifying characteristics (ILRS/IR > 104) is presented.

Investigating bipolar resistive switching characteristics in filament type and interface type BON-based resistive switching memory

2013 ◽  
Vol 529 ◽  
pp. 389-393
Author(s):  
Hsueh-Chih Tseng ◽  
Ting-Chang Chang ◽  
Kai-Hung Cheng ◽  
Jheng-Jie Huang ◽  
Yu-Ting Chen ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Bipolar Resistive Switching ◽  
Resistive Switching Memory ◽  
Switching Characteristics ◽  
Interface Type ◽  
Switching Memory ◽  
Filament Type
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