Investigation of Plasma Charging damage impact on device and gate dielectric reliability in 180nm SOI CMOS RF switch technology

2009 ◽  
Author(s):  
D.P. Ioannou ◽  
D. Harmon ◽  
W. Abadeer
Keyword(s):  
Gate Dielectric ◽  
Rf Switch ◽  
Damage Impact ◽  
Cmos Rf ◽  
Soi Cmos

scholarly journals 28-nm FD-SOI CMOS RF Figures of Merit Down to 4.2 K

2020 ◽  
Vol 8 ◽  
pp. 646-654 ◽  
Author(s):  
Lucas Nyssens ◽  
Arka Halder ◽  
Babak Kazemi Esfeh ◽  
Nicolas Planes ◽  
Denis Flandre ◽  
...  
Keyword(s):  
Figures Of Merit ◽  
Cmos Rf ◽  
28 Nm ◽  
Soi Cmos

15158A SP6T RF switch based on IBM SOI CMOS technology

2016 ◽  
Vol 37 (5) ◽  
pp. 055007 ◽  
Author(s):  
Zhiqun Cheng ◽  
Guoguo Yan ◽  
Wayne Ni ◽  
Dandan Zhu ◽  
Hannah Ni ◽  
...  
Keyword(s):  
Cmos Technology ◽  
Rf Switch ◽  
Soi Cmos

A charge-pump based 0.35-um CMOS RF switch driver for multi-standard operations

2008 ◽  
Author(s):  
Jeongwon Cha ◽  
Minsik Ahn ◽  
Changhyuk Cho ◽  
Chang-Ho Lee ◽  
Joy Laskar
Keyword(s):  
Charge Pump ◽  
Rf Switch ◽  
A Charge ◽  
Cmos Rf ◽  
Standard Operations

Long-Term Transient Radiation Effects in SOI CMOS RF ICs

2015 ◽  
Author(s):  
Galina N. Nazarova ◽  
Vadim V. Elesin ◽  
George V. Chukov ◽  
Dmitry M. Amburkin ◽  
Alexander Y. Nikiforov
Keyword(s):  
Radiation Effects ◽  
Transient Radiation ◽  
Cmos Rf ◽  
Soi Cmos ◽  
Rf Ics

A Thin-Film SOI 180nm CMOS RF Switch Technology

2009 ◽  
Author(s):  
A. Botula ◽  
A. Joseph ◽  
J. Slinkman ◽  
R. Wolf ◽  
Z.-X. He ◽  
...  
Keyword(s):  
Thin Film ◽  
Rf Switch ◽  
Cmos Rf

Ultra low loss and high linearity RF switch using 130nm SOI CMOS process

2017 ◽  
Author(s):  
Hongwei Zhu ◽  
Qiuliang Li ◽  
Hao Sun ◽  
Zhipeng Wang ◽  
Ran Liu ◽  
...  
Keyword(s):  
Cmos Process ◽  
Rf Switch ◽  
Low Loss ◽  
High Linearity ◽  
Soi Cmos
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