Modeling of radiation-induced single event transients in SOI FinFETS

Author(s):  
L. Artola ◽  
G. Hubert ◽  
R. D. Schrimpf
2018 ◽  
Vol 88-90 ◽  
pp. 936-940 ◽  
Author(s):  
S. Azimi ◽  
L. Sterpone ◽  
B. Du ◽  
L. Boragno

2004 ◽  
Vol 14 (02) ◽  
pp. 327-339 ◽  
Author(s):  
P. Fouillat ◽  
V. Pouget ◽  
D. Lewis ◽  
S. Buchner ◽  
D. McMorrow

This paper describes the use of a pulsed laser for studying radiation-induced single-event transients in integrated circuits. The basic failure mechanisms and the fundamentals of the laser testing method are presented. Sample results are presented to illustrate the benefits of using a pulsed laser for studying single-event transients.


2008 ◽  
Vol 48 (1) ◽  
pp. 29-36 ◽  
Author(s):  
Gilson I. Wirth ◽  
Michele G. Vieira ◽  
Egas H. Neto ◽  
Fernanda Lima Kastensmidt

Author(s):  
George N. Tzintzarov ◽  
Adrian Ildefonso ◽  
Jeffrey W. Teng ◽  
Milad Frounchi ◽  
Albert Djikeng ◽  
...  

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