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Author(s):  
Christian Schlunder ◽  
Katja Waschneck ◽  
Peter Rotter ◽  
Susanne Lachenmann ◽  
Hans Reisinger ◽  
...  
Author(s):  
Zhicheng Wu ◽  
Jacopo Franco ◽  
Brecht Truijen ◽  
Philippe Roussel ◽  
Stanislav Tyaginov ◽  
...  

2002 ◽  
Vol 83 (12) ◽  
pp. 1783-1788 ◽  
Author(s):  
Olga J. Kilkens ◽  
Marcel W. Post ◽  
Lucas H. van der Woude ◽  
Annet J. Dallmeijer ◽  
Wim J. van den Heuvel

1987 ◽  
Vol 115 ◽  
Author(s):  
W. E. Rhoden ◽  
J. V. Maskowitz ◽  
D. R. Kitchen ◽  
R. E. Omlor ◽  
P. F. Lloyd

IntroductionElectromigration in aluminum films has been identified as an increasing concern for integrated circuit reliability. Electromigration is the mass transport of atoms in a conductor under a current stress. Electromigration occurs in conductors experiencing current densities greater than 105 A/cm2 and is accelerated by high temperature. The damage to aluminum films manifests itself in the formation of voids, hillocks and whiskers along the conductor. This paper presents a test vehicle preparation procedure which can be used to investigate electromigration.


Author(s):  
Javier Diaz-Fortuny ◽  
Javier Martin-Martinez ◽  
Rosana Rodriguez ◽  
Montserrat Nafria ◽  
Rafael Castro-Lopez ◽  
...  
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