Charge pumping for DRAM retention diagnostic

2002 ◽  
Author(s):  
J. Adkisson ◽  
R. Divakaruni ◽  
J. Slinkman
Keyword(s):  
Charge Pumping

ANALYSIS OF HOT CARRIER DEGRADATION IN AC STRESSED N-CHANNEL MOS TRANSISTORS USING THE CHARGE PUMPING TECHNIQUE

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-651-C4-655 ◽  
Author(s):  
R. BELLENS ◽  
P. HEREMANS ◽  
G. GROESENEKEN ◽  
H. E. MAES
Keyword(s):  
Mos Transistors ◽  
Charge Pumping ◽  
Hot Carrier ◽  
Hot Carrier Degradation

scholarly journals Correlation-assisted quantized charge pumping

2021 ◽  
Vol 103 (3) ◽  
Author(s):  
Jacob A. Marks ◽  
Michael Schüler ◽  
Jan C. Budich ◽  
Thomas P. Devereaux
Keyword(s):  
Charge Pumping

Charge Pumping and Flicker Noise-based Defect Characterization in Ferroelectric FETs

2020 ◽  
Author(s):  
Yannick Raffel ◽  
Maximilian Lederer ◽  
Ricardo Olivo ◽  
Franz Muller ◽  
Raik Hoffmann ◽  
...  
Keyword(s):  
Flicker Noise ◽  
Defect Characterization ◽  
Charge Pumping

Triboelectric-piezoelectric hybrid nanogenerator based on BaTiO3-Nanorods/Chitosan enhanced output performance with self-charge-pumping system

2021 ◽  
pp. 108602
Author(s):  
Satana Pongampai ◽  
Thitirat Charoonsuk ◽  
Nattapong Pinpru ◽  
Phieraya Pulphol ◽  
Wanwilai Vittayakorn ◽  
...  
Keyword(s):  
Charge Pumping ◽  
Pumping System ◽  
Output Performance ◽  
Hybrid Nanogenerator

Criteria for Accurate Measurement of Charge-Pumping Current in 4H-SiC MOSFETs

2008 ◽  
Vol 600-603 ◽  
pp. 747-750 ◽  
Author(s):  
Dai Okamoto ◽  
Hiroshi Yano ◽  
Tomoaki Hatayama ◽  
Yukiharu Uraoka ◽  
Takashi Fuyuki
Keyword(s):  
Gate Length ◽  
Fall Time ◽  
Charge Pumping

This paper describes the influence of the geometric component in the charge-pumping measurement of 4H-SiC MOSFETs. Charge-pumping measurements were conducted on 4H-SiC MOSFETs with and without NO annealing. Charge-pumping measurements with different pulse-fall times revealed that the geometric component exists in 4H-SiC MOSFETs and is especially large in the unannealed MOSFETs. A sufficiently long fall-time is needed to minimize its effect, which is expected to be 1–10 μs for 4H-SiC MOSFETs with a gate length of 10 μm.

A new charge pumping model considering bulk trap states in polysilicon thin film transistor

1998 ◽  
Vol 42 (11) ◽  
pp. 1897-1903 ◽  
Author(s):  
Kee-Jong Kim ◽  
Won-Kyu Park ◽  
Seong-Gyun Kim ◽  
Keong-Mun Lim ◽  
In-Gon Lim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Trap States ◽  
Charge Pumping
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