An X-band SiGe low-noise amplifier with high gain and low noise figure

2008 ◽  
Author(s):  
Pinar Basak Basyurt ◽  
Nil Tarim
Keyword(s):  
Noise Figure ◽  
High Gain ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
X Band ◽  
Noise Amplifier

scholarly journals Design and Analysis High Gain PHEMT LNA for Wireless Application at 5.8 GHz

2015 ◽  
Vol 5 (3) ◽  
pp. 611
Author(s):  
Kamil Pongot ◽  
Abdul Rani Othman ◽  
Zahriladha Zakaria ◽  
Mohamad Kadim Suaidi ◽  
Abdul Hamid Hamidon ◽  
...  
Keyword(s):  
Return Loss ◽  
Noise Figure ◽  
High Gain ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Output Terminal ◽  
Wireless Application ◽  
Noise Amplifier ◽  
The Stability ◽  
Inductive Generation

This research present a design of a higher  gain (66.38dB) for PHEMT LNA  using an inductive drain feedback technique for wireless application at 5.8GHz. The amplifier it is implemented using PHEMT FHX76LP transistor devices.  The designed circuit is simulated with  Ansoft Designer SV.  The LNA was designed using  T-network as a matching technique was used at the input and output terminal,  inductive generation to the source and an inductive drain feedback. The  low noise amplifier (LNA) using lumped-component provides a noise figure 0.64 dB and a gain (S<sub>21</sub>) of 68.94 dB. The output reflection (S<sub>22</sub>), input reflection (S<sub>11</sub>) and return loss (S<sub>12</sub>) are -17.37 dB, -15.77 dB and -88.39 dB respectively. The measurement shows the  stability was at  4.54 and 3-dB bandwidth of 1.72 GHz. While, the  low noise amplifier (LNA) using  Murata manufactured component provides a noise figure 0.60 dB and a gain (S<sub>21</sub>) of 66.38 dB. The output reflection (S<sub>22</sub>), input reflection (S<sub>11</sub>) and return loss (S<sub>12</sub>) are -13.88 dB, -12.41 dB and -89.90 dB respectively. The measurement shows the  stability was at  6.81 and 3-dB bandwidth of 1.70 GHz. The input sensitivity more than -80 dBm  exceeded the standards required by IEEE 802.16.

scholarly journals Single Stage 180nm CMOS Low Noise Amplifier Topologies and Optimization Algorithms for S Band Frequency

2019 ◽  
Vol 8 (3) ◽  
pp. 152-157 ◽  
Keyword(s):  
Noise Figure ◽  
Optimization Algorithms ◽  
Satellite System ◽  
High Gain ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Dual Band ◽  
Active Device ◽  
Band Frequency ◽  
Noise Amplifier

Low Noise Amplifier (LNA) plays an important role in radio receivers. It mainly determines the system noise and intermodulation behavior of overall receiver. LNA design is more challenging as it requires high gain, low noise figure, good input and output matching and unconditional stability. Further, designing a Low noise Amplifier requires active device selection, amplifier topology, optimization algorithms for superlative results. Hence this paper presents performance analysis of CMOS LNA based on different topologies and optimization algorithms for 180nm RF CMOS design in S band frequency. Here the best results, various limitations in each topology are reviewed and required specifications are determined in each designing. Further this best topology is used for designing LNA circuit which could be used in Indian Regional Navigation Satellite System (IRNSS) applications in dual band frequency.

STUDY OF PARASITIC CAPACITANCE EFFECT ON NOISE FIGURE OF IDCLNA IN DEEP SUBMICRON CMOS TECHNOLOGIES

2014 ◽  
Vol 23 (05) ◽  
pp. 1450058
Author(s):  
S. MANJULA ◽  
D. SELVATHI
Keyword(s):  
Noise Figure ◽  
High Gain ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Current Gain ◽  
Cmos Process ◽  
Short Channel ◽  
Trade Offs ◽  
Noise Amplifier ◽  
The Impact

Low noise amplifier (LNA) is an important component in RF receiver front end. An inductively degenerated cascode low noise amplifier (IDCLNA) is mostly preferred for producing good trade-offs such as high gain, low noise figure (NF), high reverse isolation and low power consumption for narrowband applications. This IDCLNA structure is also used to reduce the gate induced noise on the noise performance by inserting the capacitance in parallel with the gate-to-source capacitance of main transistor. Usually, the parasitic overlap capacitances can impose serious constraints on achievable performance and is taken into account in IDCLNA. In this paper, IDCLNA is designed at a frequency of 2.4 GHz with analyzing the impact of parasitic overlap capacitances on IDCLNA in terms of unity current gain frequency (f T ) which will affect the NF of IDCLNA and simulated using 130 nm, 90 nm and 65 nm CMOS technologies. The NF of IDCLNA with and without parasitic overlap capacitances are analyzed and compared for different short channel CMOS processes. Simulation results show that the parasitic overlap capacitances have advantageous to reduce the gate induced noise in IDCLNA for 130-nm CMOS process for 2.4 GHz applications.

Pareto optimization of radar receiver low-noise amplifier source impedance for low noise and high gain

2015 ◽  
Vol 8 (8) ◽  
pp. 1133-1139 ◽  
Author(s):  
Charles Baylis ◽  
Robert J. Marks ◽  
Lawrence Cohen
Keyword(s):  
Solution Method ◽  
Noise Figure ◽  
High Gain ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Design Engineers ◽  
Source Impedance ◽  
Noise Amplifier ◽  
Fundamental Solution Method ◽  
Maximum Available Gain

In radar receivers, the low noise amplifier(LNA)must provide very low noise figure and high gain to successfully receive very low signals reflected off of illuminated targets. Obtaining low noise figure and high gain, unfortunately, is a well-known trade-off that has been carefully negotiated by design engineers for years. This paper presents a fundamental solution method for the source reflection coefficient providing the maximum available gain under a given noise figure constraint, and also for the lowest possible noise figure under a gain constraint. The design approach is based solely on the small-signal S-parameters and noise parameters of the device; no additional measurements or information are required. This method is demonstrated through examples. The results are expected to find application in design of LNAs and in real-time reconfigurable amplifiers for microwave communication and radar receivers.

High-gain sub-decibel noise figure low noise amplifier for atmospheric radar

2016 ◽  
Vol 58 (7) ◽  
pp. 1618-1622 ◽  
Author(s):  
B. T. Venkatesh Murthy ◽  
I. Srinivasa Rao
Keyword(s):  
Noise Figure ◽  
High Gain ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Noise Amplifier

scholarly journals Development of X-Band Transceiver MMIC’s Using GaN Technology

2019 ◽  
Vol 8 (2) ◽  
pp. 1-9
Author(s):  
O. Memioglu ◽  
O. Kazan ◽  
A. Karakuzulu ◽  
I. Turan ◽  
A. Gundel ◽  
...  
Keyword(s):  
Power Amplifiers ◽  
Noise Figure ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Rf Power ◽  
Rf Switch ◽  
X Band ◽  
Measurement Results ◽  
Noise Amplifier ◽  
Selection Of

This paper describes X-Band power amplifier (PA), low noise amplifier (LNA) and switches that can be used in transmit/receive modules which are developed with GaN technology. For Transmit chain two 25 W high power amplifiers that are tuned between 8-10 GHz and 10-12 GHz bands are designed. A low noise amplifier with 2 W survivability and less than 2dB noise figure is designed for receive chain Furthermore, an RF switch that is capable of withstanding 25 W RF power is developed for the selection of transmit or receive chains. Measurement results show that both power amplifiers produce 25 W of power. Low noise amplifier has more than 20 dB small signal gain with less than 2 dB noise figure. RF switch has 50 dB of isolation with less than 1 dB insertion loss.

scholarly journals Analytical Performance of Low Noise Amplifier Using Single-Stage Configuration for ADS-B Receiver

2021 ◽  
Vol 21 (2) ◽  
pp. 91
Author(s):  
M. Reza Hidayat ◽  
Ilham Pazaesa ◽  
Salita Ulitia Prini
Keyword(s):  
Return Loss ◽  
Noise Figure ◽  
Impedance Matching ◽  
High Gain ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Stability Factor ◽  
Ic 10 ◽  
Radar Applications ◽  
Noise Amplifier

Automatic dependent surveillance-broadcast (ADS-B) is an equipment of a radar system to reach difficult areas. For radar applications, an ADS-B requires a low noise amplifier (LNA) with high gain, stability, and a low noise figure. In this research, to produce an LNA with good performance, an LNA was designed using a BJT transistor 2SC5006 with DC bias, VCE = 3 V, and current Ic = 10 mA, also a DC supply with VCC = 12 V, to achieve a high gain with a low noise figure. The initial LNA impedance circuit was simulated using 2 elements and then converted into 3 elements to obtain parameters according to the target specification through the tuning process, impedance matching circuit was used to reduce return loss and voltage standing wave ratio (VSWR) values. The LNA sequence obtains the working frequency of 1090 MHz, return loss of -52.103 dB, a gain of 10.382, VSWR of 1.005, a noise figure of 0.552, stability factor of 0.997, and bandwidth of 83 MHz. From the simulation results, the LNA has been successfully designed according to the ADS-B receiver specifications.

Concurrent Multi-Band Low-Noise Amplifier

2017 ◽  
Vol 26 (06) ◽  
pp. 1750104 ◽  
Author(s):  
Ramya ◽  
T. Rama Rao ◽  
Revathi Venkataraman
Keyword(s):  
Noise Figure ◽  
Transformation Method ◽  
High Gain ◽  
Wide Frequency Range ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Vehicular Communication ◽  
Matching Network ◽  
Noise Amplifier ◽  
Multi Band

With rapid expansions of wireless communications, requirements for transceivers that support concurrent multiple services are continuously increasing and demanding design of a concurrent low-noise amplifier (LNA) with low noise figure (NF), high gain, and high linearity over a wide frequency range for various wireless applications. The proposed work focuses on a concurrent multi-band LNA that works at navigational frequencies, namely, of 1.2[Formula: see text]GHz and 1.5[Formula: see text]GHz, wireless communication frequencies, namely, of 2.45[Formula: see text]GHz and 3.3[Formula: see text]GHz, dedicated short range communication (DSRC) frequency of 5.8[Formula: see text]GHz for the vehicular communication applications. This circuit has a distinct input matching network which resonates at all desired five frequency bands and is achieved by adapting frequency transformation method. To accomplish simultaneous reception of the desired penta-band, the output matching is designed with simple LC matching network with the aid of load-pull methodology.

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