High Current [200 A], Low Resistance (0.87 mΩ-cm/sub 2/) Normally-off SiC VJFETs for Power Switching Applications

2006 ◽  
Author(s):  
E.J. Stewart ◽  
A.P. Walker ◽  
T.R. McNutt ◽  
S.D. Van Campen ◽  
H.C. Hearne ◽  
...  
Keyword(s):  
High Current ◽  
Power Switching ◽  
Low Resistance

HIGH CURRENT DENSITY/HIGH VOLTAGE AlGaN/GaN HFETs ON SAPPHIRE

2009 ◽  
Vol 19 (01) ◽  
pp. 129-135
Author(s):  
JUNXIA SHI ◽  
M. POPHRISTIC ◽  
L. F. EASTMAN
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
High Current Density ◽  
Design Parameters ◽  
Gate Length ◽  
High Current ◽  
Theoretical Limit ◽  
Power Switching ◽  
Sapphire Substrates ◽  
State Breakdown

AlGaN / GaN heterojunction field effect transistors (HFETs) on sapphire substrates for power-switching applications have been fabricated. Design parameters such as source-gate spacing (Lsg), gate length (Lg), and gate width (Wg) have been varied to check their effects on the device performances. For a gate-drain spacing (Lgd) of 10µm, a specific on-resistance (ARon) of 1.35mΩ-cm2 and off-state breakdown voltage (BV) of 770V was achieved, which is close to the 4- H SiC theoretical limit.

Characteristics of Diamond SBD’s Fabricated on Half Inch Size CVD Wafer Made by the “Direct Wafer Fabrication Technique”

2010 ◽  
Vol 645-648 ◽  
pp. 1227-1230 ◽  
Author(s):  
Shinichi Shikata ◽  
Hitoshi Umezawa ◽  
Hideaki Yamada ◽  
T. Tsubouchi ◽  
Yoshiaki Mokuno ◽  
...  
Keyword(s):  
Cooling System ◽  
Device Fabrication ◽  
Wafer Fabrication ◽  
High Current ◽  
Fabrication Technique ◽  
Power Switching ◽  
Single Crystal Diamond ◽  
Growth Method ◽  
Cvd Growth ◽  
Influence Of Substrate

Diamond is a hopeful candidate for power switching device which can operate at high temperature as a “Cooling system free” device, yet at a high current. Recently we have developed a 3D diamond CVD growth method coupled with a sophisticated “direct wafer fabrication technique” to fabricate diamond wafer without slicing. Currently, half inch size single crystal diamond substrates are available for R&D of diamond device. Using this technique, we have increased the device fabrication size from 3x3mm2 to half inch wafer. In this paper, we present the results of measurements on the first device fabricated on a half inch size CVD substrate. We have carried out the first device characteristics mapping for diamond, and have observed the influence of substrate characteristics on the SBD characteristics.

Feasibility of Efficient Power Switching Using Short-Channel 1200-V Normally-Off SiC VJFETs; Experimental Analysis and Simulations

2010 ◽  
Vol 645-648 ◽  
pp. 929-932 ◽  
Author(s):  
Victor Veliadis ◽  
Harold Hearne ◽  
Eric J. Stewart ◽  
R. Howell ◽  
Aivars J. Lelis ◽  
...  
Keyword(s):  
Vertical Channel ◽  
Depletion Region ◽  
Current Gain ◽  
High Current ◽  
Short Channel ◽  
Power Switching ◽  
Epitaxial Regrowth ◽  
Efficient Power ◽  
State Resistance ◽  
Channel Region

A recessed implanted-gate short-channel 1290-V normally-OFF 4H-SiC vertical-channel JFET (VJFET), fabricated in seven photolithographic-levels, with a single masked ion-implantation and no epitaxial regrowth, is evaluated for efficient power conditioning. Under unipolar high-current-gain operation, which is required for efficient power switching, the 1200-V N-OFF (enhancement mode) VJFET exhibits prohibitively high on-state resistance. Comparison with 1200-V normally-ON VJFETs, fabricated on the same wafer, confirms experimentally that the strong gate-depletion-region overlap required for 1200-V normally-OFF blocking is the principal contributor to the prohibitively high specific on-state resistance observed under high current-gain VJFET operation. Recessed-implanted-gate VJFET channel-region optimization simulations (assuming a single commercial implantation and no epitaxial-regrowth) revealed that although aggressively increasing channel doping lowers resistance, the corresponding reduction in source mesa-width can prohibitively limit manufacturability.

100 Amp, 1000 Volt Class 4H-Silicon Carbide MOSFET Modules

2009 ◽  
Vol 615-617 ◽  
pp. 899-902 ◽  
Author(s):  
Peter A. Losee ◽  
Kevin Matocha ◽  
Steve Arthur ◽  
Eladio Delgado ◽  
Richard Beaupre ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Room Temperature ◽  
Schottky Diodes ◽  
High Current ◽  
Large Area ◽  
Power Switching ◽  
Switching Performance ◽  
Switching Characteristics

The development of large area, up to 70m/1kV (0.45cm x 0.45cm) 4H-SiC vertical DMOSFETs is presented. DC and switching characteristics of high-current, 100Amp All-SiC power switching modules are demonstrated using 0.45cm x 0.225cm DMOSFET die and commercial Schottky diodes. The switching performance from room temperature up to T=200°C of the All-SiC modules is presented, with as much as ten times lower losses than co-fabricated Si-based modules using commercial IGBTs.

scholarly journals Mn-Zn ferrite line EMI suppressor for power switching noise in the impulse/high current bias regime

2018 ◽  
Vol 26 (5) ◽  
pp. 2426-2436
Author(s):  
Dragana PETROVIĆ ◽  
Miroslav LAZIĆ ◽  
Obrad ALEKSIĆ ◽  
Maria Vesna NIKOLIĆ ◽  
Vedran IBRAHIMOVIĆ ◽  
...  
Keyword(s):  
Switching Noise ◽  
High Current ◽  
Power Switching ◽  
Zn Ferrite
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