In traditional 3-pin High-Voltage (HV) power MOSFET (MOSFET) packages, the hard-switching transition speed is limited by the package source-inductance because the MOSFET drain current and gate current both share a path through the same package source inductance. The details of this mechanism are discussed and the resulting additional switching power loss caused by it is both measured and simulated.
Proposed innovative “Source-Sense” packages split the two currents into separate paths by adding separate source-pin for Kelvin-type driver connection to gate-source on the chip, thus completely eliminating all switching loss incurred by the source inductance for improved efficiency and lower die temperature.
Leadless SMD packages employing this method are explored for further addressing complications caused by package source inductance, such as common-mode noise and requirement for filtering.
Advanced package concepts are discussed for future optimization and thermal management, and versatility of these advanced concepts as well as existing leadless SMD packages with “Source-Sense” is examined.