Oxygen-contamination-free ultra-low-resistance silicided contact technology for high performance power devices

Author(s):  
K. Ino ◽  
K. Yamada ◽  
G.S. Jong ◽  
T. Ohmi
2012 ◽  
Vol 12 (1) ◽  
pp. 225-227 ◽  
Author(s):  
Joon-Woo Jeon ◽  
Sang Youl Lee ◽  
June O. Song ◽  
Tae-Yeon Seong

2021 ◽  
Vol 511 ◽  
pp. 230418
Author(s):  
Peng Liang ◽  
Zeya Huang ◽  
Linhui Chen ◽  
Gang Shao ◽  
Hailong Wang ◽  
...  

2018 ◽  
Vol 2018 (1) ◽  
pp. 000125-000128
Author(s):  
Ruby Ann M. Camenforte ◽  
Jason Colte ◽  
Richard Sumalinog ◽  
Sylvester Sanchez ◽  
Jaimal Williamson

Abstract Overmolded Flip Chip Quad Flat No-lead (FCQFN) is a low cost flip chip on leadframe package where there is no need for underfill, and is compatible with Pb free or high Pb metallurgy. A robust leadframe design, quality solder joint formation and an excellent molding process are three factors needed to assemble a high performance FCQFN. It combines the best of both wirebonded QFN and wafer chip scale devices. For example, wafer chip scale has low resistance, but inadequate thermal performance (due to absence of thermal pad), whereas wirebonded QFN has good thermal performance (i.e., heat dissipated through conductive die attach material, through the pad and to the board) but higher resistance. Flip chip QFN combines both positive aspects – that is: low resistance and good thermals. One of the common defects for molded packages across the semiconductor industry is the occurrence of mold voiding as this can potentially affect the performance of a device. This paper will discuss how mold voiding is mitigated by understanding the mold compound behavior on flip chip QFN packages. Taking for example the turbulent mold flow observed on flip chip QFN causing mold voids. Mold compound material itself has a great contribution to mold voids, hence defining the correct attributes of the mold compound is critical. Altering the mold compound property to decrease the mold compound rheology is a key factor. This dynamic interaction between mold compound and flip chip QFN package configuration is the basis for a series of design of experiments using a full factorial matrix. Key investigation points are establishing balance in mold compound chemistry allowing flow between bump pitch, as well as the mold compound rheology, where gelation time has to be properly computed to allow flow across the leadframe. Understanding the flow-ability of mold compound for FCQFN, the speed of flow was optimized to check on its impact on mold voids. Mold airflow optimization is also needed to help fill in tighter bump spacing but vacuum-on time needs to be optimized as well.


2003 ◽  
Vol 764 ◽  
Author(s):  
Sei-Hyung Ryu ◽  
Anant K. Agarwal ◽  
James Richmond ◽  
John W. Palmour

AbstractVery high critical field, reasonable bulk electron mobility, and high thermal conductivity make 4H-Silicon carbide very attractive for high voltage power devices. These advantages make high performance unipolar switching devices with blocking voltages greater than 1 kV possible in 4H-SiC. Several exploratory devices, such as vertical MOSFETs and JFETs, have been reported in SiC. However, most of the previous works were focused on high voltage aspects of the devices, and the high speed switching aspects of the SiC unipolar devices were largely neglected. In this paper, we report on the static and dynamic characteristics of our 4H-SiC DMOSFETs. A simple model of the on-state characteristics of 4H-SiC DMOSFETs is also presented.


Electronics ◽  
2019 ◽  
Vol 8 (3) ◽  
pp. 312 ◽  
Author(s):  
Woo-Young Choi ◽  
Min-Kwon Yang

The conventional single-phase quasi-Z-source (QZS) inverter has a high leakage current as it is connected to the grid. To address this problem, this paper proposes a transformerless QZS inverter, which can reduce the leakage current for single-phase grid-tied applications. The proposed inverter effectively alleviates the leakage current problem by removing high-frequency components for the common-mode voltage. The operation principle of the proposed inverter is described together with its control strategy. A control scheme is presented for regulating the DC-link voltage and the grid current. A 1.0 kW prototype inverter was designed and tested to verify the performance of the proposed inverter. Silicon carbide (SiC) power devices were applied to the proposed inverter to increase the power efficiency. The experimental results showed that the proposed inverter achieved high performance for leakage current reduction and power efficiency improvement.


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