Calculation of Capacitance Matrix of Non-uniform Multi-conductor Transmission Lines based on S-parameters

Author(s):  
Xiaoyu Lu ◽  
Xiang Zhou
2014 ◽  
Vol 56 (10) ◽  
pp. 2257-2260 ◽  
Author(s):  
Daniel M. García-Mora ◽  
Miguel A. Tlaxcalteco-Matus ◽  
Reydezel Torres-Torres ◽  
Gaudencio Hernández-Sosa ◽  
Olga M. Becerra-Fuentes

2007 ◽  
Vol 5 ◽  
pp. 427-434 ◽  
Author(s):  
T. Zelder ◽  
H. Rabe ◽  
H. Eul

Abstract. In this paper, a contactless measuring system for the determination of the S-parameters of planar circuits is presented. With a contactless measuring system it is possible to characterise a device-under-test (DUT) embedded in a planar circuit environment without cutting the planar transmission lines connecting the DUT. The technique utilizes four identical capacitive probes in conjunction with a vector network analyser (VNA). For the usage of electromagnetic probes compared to other coupling techniques like the electro-optic probing, there is no need for expensive and complex equipment in addition to the typical equipment of a common microwave laboratory. The S-parameters are determined accurately using conventional calibration methods. A simple analytical model for the representation of the basic characteristics is developed. Furthermore, the influences on the S-parameters as a result of a variation in the coupling are presented. With the knowledge of the system characteristics, an accurate contactless measurement system is set up. The comparison between conventional and contactless measurements in a frequency range of 1–20 GHz shows a very good agreement with a phase error smaller than 1°.


Author(s):  
Т.С. Глотова ◽  
Д.В. Журавлёв ◽  
В.В. Глотов

Различные типы СВЧ-устройств можно описать с помощью падающих и отражённых волн, которые распространяются в подключенных к ним линиях передач. Связь между этими волнами описывается волновой матрицей рассеяния или матрицей s-параметров. Оценка дифференциальных структур необходима для обеспечения оптимальных характеристик схемы. Комбинированные дифференциальные и синфазные (смешанные) параметры рассеяния (s-параметры) хорошо адаптированы для точных измерений линейных сетей на радиочастотах. Представлено преобразование между стандартными s-параметрами и s-параметрами смешанного режима, также описано графическое сравнение графиков стандартных и смешанных потерь s-параметра. S-параметры смешанного режима, полученные с помощью описанного метода, имеют хорошее согласие для возбудителя и реакции с одним и тем же режимом (общий или дифференциальный) и небольшую вариацию с разными режимами. Была изготовлена дифференциальная структура, которая измеряется с помощью двухпортового векторного анализатора цепей и четырехпортового анализатора цепей смешанного режима. Для прогнозирования поведения параметров смешанного режима с использованием традиционного двухпортового векторного анализатора цепей можно применить метод преобразования режимов, однако четырехпортовый анализатор цепей смешанного режима по-прежнему необходим для точного измерения влияния режима преобразования в реальные интегрированные дифференциальные тестовые структуры Various types of microwave devices can be described using incident and reflected waves that propagate in the transmission lines connected to them. The relationship between these waves is described by the scattering wave matrix or the S-parameter matrix. Evaluation of differential structures is necessary to ensure optimal circuit performance. The combined differential and common-mode (mixed) scatter parameters (s-parameters) are well suited for accurate measurements of linear networks at radio frequencies. We present the transformation between standard s-parameters and mixed-mode s-parameters, and a graphical comparison of graphs of standard and mixed s-parameter losses is also described. S-parameters of the mixed mode, obtained using the described method, have good agreement for the pathogen and the reaction with the same mode (general or differential) and little variation with different modes. We fabricated and measured a differential structure with a two-port vector network analyzer and a four-port mixed-mode network analyzer. Mode conversion can be used to predict the behavior of mixed-mode parameters using a traditional 2-port vector network analyzer, but a four-port mixed-mode network analyzer is still required to accurately measure the effect of conversion mode on real integrated differential test structures


2012 ◽  
Vol 59 (6) ◽  
pp. 1803-1806 ◽  
Author(s):  
Svetlana C. Sejas-Garcia ◽  
Reydezel Torres-Torres ◽  
Roberto S. Murphy-Arteaga

2010 ◽  
Vol 52 (1) ◽  
pp. 189-198 ◽  
Author(s):  
Jianmin Zhang ◽  
James L. Drewniak ◽  
David J. Pommerenke ◽  
Marina Y. Koledintseva ◽  
Richard E. DuBroff ◽  
...  

2003 ◽  
Vol 784 ◽  
Author(s):  
Won-Jeong Kim ◽  
Sang-Su Kim ◽  
Tae-Kwon Song ◽  
Seung Eon Moon ◽  
Eun-Kyoung Kim ◽  
...  

ABSTRACTMicrowave properties of coplanar waveguide (CPW) transmission lines fabricated on high dielectric materials, such as ferroelectric Ba1−xSrxTiO3 films, are highly sensitive on the dimension and shape of electrodes. A small change in device dimension affects the total electrical length of the CPW, which may mislead the effective dielectric constant of the dielectric layer. Furthermore, extracting dielectric constant of high-k thin films from the measured microwave properties, such as S-parameters, is very difficult. The well known a modified conformal mapping method frequently exhibits an inconsistent dielectric constant for CPW on high-k materials. CPW transmission lines were fabricated on high-k thin films, ferroelectric Ba0.6Sr0.4TiO3, which were deposited by the pulsed laser deposition with partial oxygen backgrounds. A large phase shift angle of 100° at 10 GHz was observed from the CPW (gap = 4 μm, length = 3 mm) with a 40 V of dc bias, which supports that the idea of the tunable microwave device application using ferroelectrics films. The dielectric constant of the thin ferroelectric film was extracted from the dimension of the CPW (gap, width, length) and the measured S-parameters by a modified conformal mapping. However, the dielectric constant of the ferroelectric thin film calculated by a modified conformal mapping exhibits a gap dependency; dielectric constant (990 ∼ 830) decreases with increasing gap size (4 ∼ 19 μm, respectively). For comparison, dielectric properties have been extracted by extensive EM-simulation using a HFSS™ (Ansoft) with observed dimensions of CPW devices. Total phase, which is closely related with the dielectric constant of the film, is strongly affected by gap size, film thickness, and slanted angle of CPW.


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