Electrode effect on microwave properties of ferroelectric (BaxSr1-x)TiO3 thin films

2003 ◽  
Vol 784 ◽  
Author(s):  
Won-Jeong Kim ◽  
Sang-Su Kim ◽  
Tae-Kwon Song ◽  
Seung Eon Moon ◽  
Eun-Kyoung Kim ◽  
...  

ABSTRACTMicrowave properties of coplanar waveguide (CPW) transmission lines fabricated on high dielectric materials, such as ferroelectric Ba1−xSrxTiO3 films, are highly sensitive on the dimension and shape of electrodes. A small change in device dimension affects the total electrical length of the CPW, which may mislead the effective dielectric constant of the dielectric layer. Furthermore, extracting dielectric constant of high-k thin films from the measured microwave properties, such as S-parameters, is very difficult. The well known a modified conformal mapping method frequently exhibits an inconsistent dielectric constant for CPW on high-k materials. CPW transmission lines were fabricated on high-k thin films, ferroelectric Ba0.6Sr0.4TiO3, which were deposited by the pulsed laser deposition with partial oxygen backgrounds. A large phase shift angle of 100° at 10 GHz was observed from the CPW (gap = 4 μm, length = 3 mm) with a 40 V of dc bias, which supports that the idea of the tunable microwave device application using ferroelectrics films. The dielectric constant of the thin ferroelectric film was extracted from the dimension of the CPW (gap, width, length) and the measured S-parameters by a modified conformal mapping. However, the dielectric constant of the ferroelectric thin film calculated by a modified conformal mapping exhibits a gap dependency; dielectric constant (990 ∼ 830) decreases with increasing gap size (4 ∼ 19 μm, respectively). For comparison, dielectric properties have been extracted by extensive EM-simulation using a HFSS™ (Ansoft) with observed dimensions of CPW devices. Total phase, which is closely related with the dielectric constant of the film, is strongly affected by gap size, film thickness, and slanted angle of CPW.

2019 ◽  
Vol 5 (5) ◽  
pp. eaau9785 ◽  
Author(s):  
Sandhya Susarla ◽  
Thierry Tsafack ◽  
Peter Samora Owuor ◽  
Anand B. Puthirath ◽  
Jordan A. Hachtel ◽  
...  

Upcoming advancements in flexible technology require mechanically compliant dielectric materials. Current dielectrics have either high dielectric constant, K (e.g., metal oxides) or good flexibility (e.g., polymers). Here, we achieve a golden mean of these properties and obtain a lightweight, viscoelastic, high-K dielectric material by combining two nonpolar, brittle constituents, namely, sulfur (S) and selenium (Se). This S-Se alloy retains polymer-like mechanical flexibility along with a dielectric strength (40 kV/mm) and a high dielectric constant (K = 74 at 1 MHz) similar to those of established metal oxides. Our theoretical model suggests that the principal reason is the strong dipole moment generated due to the unique structural orientation between S and Se atoms. The S-Se alloys can bridge the chasm between mechanically soft and high-K dielectric materials toward several flexible device applications.


Measurement ◽  
2010 ◽  
Vol 43 (4) ◽  
pp. 556-562 ◽  
Author(s):  
K. Sudheendran ◽  
D. Pamu ◽  
M. Ghanashyam Krishna ◽  
K.C. James Raju

2016 ◽  
Vol 18 (28) ◽  
pp. 19103-19117 ◽  
Author(s):  
Elshad Allahyarov ◽  
Hartmut Löwen ◽  
Lei Zhu

Mixing dielectric polymers with high permittivity (high-k) inclusions can boost their actuation and energy storage properties.


2015 ◽  
Vol 69 (5) ◽  
pp. 61-65 ◽  
Author(s):  
K. K. Kovi ◽  
S. Majdi ◽  
M. Gabrysch ◽  
N. Suntornwipat ◽  
J. Isberg

2004 ◽  
Vol 811 ◽  
Author(s):  
Ting Yu ◽  
Weiguang Zhu ◽  
Xiaofeng Chen ◽  
Yuekang Lu

ABSTRACTElectrical properties and leakage current mechanisms of perovskite CaZrO3 dielectric thin films have been studied in this paper. CaZrO3 thin films were deposited on Pt/SiO2/n-Si substrate by the sol-gel wet chemical technology, and then annealed at temperatures ranging from 550 to 700 °C for 1h in O2. The films with platinum (Pt) top and bottom electrodes were characterized with respect to the leakage current as a function of temperature and applied voltage. The CaZrO3 film annealed at 600 °C was amorphous and showed good electrical properties with a dielectric constant of about 15 and leakage current density of 10−8 A/cm2 at high applied electrical field of 2.5 MV/cm. The data can be interpreted via a Schottky barrier model. The conduction mechanism at low electric fields is due to Ohmic conduction. On the other hand Schottky mechanism dominates at the intermediate fields. The high dielectric constant, low leakage current density and high breakdown strength suggest that the CaZrO3 thin film is a promising candidate for high-k applications.


1985 ◽  
Vol 32 (6) ◽  
pp. 3429-3441 ◽  
Author(s):  
Manuel Gmez ◽  
Luis Fonseca ◽  
Gerardo Rodríguez ◽  
Angel Velzquez ◽  
Luis Cruz

Sign in / Sign up

Export Citation Format

Share Document