Combined use of Finite Element and Equivalent Circuit Modeling for System-Level Simulation of Integrated Capacitive Micromachined Ultrasonic Transducers (CMUT)

Author(s):  
Alessandro S. Savoia ◽  
Giuseppe Scaglione ◽  
Bruno Haider
2009 ◽  
Vol 79-82 ◽  
pp. 103-106 ◽  
Author(s):  
Li Hua Tang ◽  
Yao Wen Yang

Accurate modeling and computer aided simulation is advantageous during the design stage of a piezoelectric energy harvesting system. In this paper, system-level finite element modeling (FEM) of a cantilevered piezoelectric energy harvester with a resistor is conducted using ANSYS. Considering that practical energy harvesting circuit includes nonlinear electrical elements, which is beyond the modeling capability of ANSYS, an equivalent circuit modeling (ECM) method is proposed to address the problem. After the parameters of equivalent circuit are identified, system-level simulation is conducted in SPICE software.


Author(s):  
Jinda Jia ◽  
Xiaobiao Shan ◽  
Xingxu Zhang ◽  
Tao Xie ◽  
Yaowen Yang

Abstract Low-speed wind energy has potential to be captured for powering micro-electro-mechanical systems or sensors in remote inaccessible place by piezoelectric energy harvesting from vortex-induced vibration (VIV). Conventional theory or finite-element analysis mostly considers a simple pure resistance as interface circuit because of the complex fluid-solid-electricity coupling in aeroelastic piezoelectric energy harvesting. However, the output alternating voltage should be rectified to direct voltage to be used in practical occasions, where the theoretical analysis and finite-element analysis for complex interface may be cumbersome or difficult. To solve this problem, this paper presents an equivalent circuit modeling (ECM) method to analyze the performance of vortex-induced energy harvesters. Firstly, the equivalent analogies from the mechanical and fluid domain to the electrical domain are built. The linear mechanical and fluid elements are represented by standard electrical elements. The nonlinear elements are represented by electrical non-standard user-defined components. Secondly, the total fluid-solid-electricity coupled mathematical equations of the harvesting system are transformed into electrical formulations based on the equivalent analogies. Finally, the entire ECM is established in a circuit simulation software to perform system-level transient analyses. The simulation results from ECM have good agreement with the experimental measurements. Further parametric studies are carried out to assess the influences of wind speed and resistance on the output power of the alternating circuit interface and the capacitor filter circuit. At wind speed of 1.2 m/s, the energy harvester could generate an output power of 81.71 μW with the capacitor filter circuit and 114.64 μW with the alternating circuit interface. The filter capacitance is further studied to ascertain its effects on the stability of output and the settling time.


Electronics ◽  
2020 ◽  
Vol 10 (1) ◽  
pp. 63
Author(s):  
Saima Hasan ◽  
Abbas Z. Kouzani ◽  
M A Parvez Mahmud

This paper presents a simple and comprehensive model of a dual-gate graphene field effect transistor (FET). The quantum capacitance and surface potential dependence on the top-gate-to-source voltage were studied for monolayer and bilayer graphene channel by using equivalent circuit modeling. Additionally, the closed-form analytical equations for the drain current and drain-to-source voltage dependence on the drain current were investigated. The distribution of drain current with voltages in three regions (triode, unipolar saturation, and ambipolar) was plotted. The modeling results exhibited better output characteristics, transfer function, and transconductance behavior for GFET compared to FETs. The transconductance estimation as a function of gate voltage for different drain-to-source voltages depicted a proportional relationship; however, with the increase of gate voltage this value tended to decline. In the case of transit frequency response, a decrease in channel length resulted in an increase in transit frequency. The threshold voltage dependence on back-gate-source voltage for different dielectrics demonstrated an inverse relationship between the two. The analytical expressions and their implementation through graphical representation for a bilayer graphene channel will be extended to a multilayer channel in the future to improve the device performance.


Sign in / Sign up

Export Citation Format

Share Document