Resonant tunneling behavior in ion-enhanced field and thermo-field emission

Author(s):  
Xi Tan ◽  
Nathaniel Griggs ◽  
Paul Rumbach ◽  
David B. Go ◽  
Kevin L. Jensen
2016 ◽  
Vol 120 (21) ◽  
pp. 213301 ◽  
Author(s):  
Xi Tan ◽  
Paul Rumbach ◽  
Nathaniel Griggs ◽  
Kevin L. Jensen ◽  
David B. Go

NANO ◽  
2006 ◽  
Vol 01 (03) ◽  
pp. 259-264 ◽  
Author(s):  
A. S. ATALLAH ◽  
A. H. PHILLIPS ◽  
A. F. AMIN ◽  
M. A. SEMARY

The influence of time-varying fields on the transport through a mesoscopic device has been investigated. This mesoscopic device is modeled as a quantum dot coupled to superconducting reservoirs via quantum point contact. The effect of a magnetic field and the Andreev reflection process were taken into account. The conductance was deduced by using Landuaer–Buttiker equation. A numerical calculation has been performed that shows a resonant tunneling behavior. Such investigation is important for fabricating photoelectron mesoscopic devices.


2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Christian Henkel ◽  
Robert Zierold ◽  
Adithya Kommini ◽  
Stefanie Haugg ◽  
Chris Thomason ◽  
...  

2018 ◽  
Vol 8 (5) ◽  
pp. 931-935 ◽  
Author(s):  
A. A. Evtukh ◽  
O. V. Pylypova ◽  
O. Martyniuk ◽  
H. Mimura

2020 ◽  
Vol 128 (11) ◽  
pp. 114302
Author(s):  
Mykola Semenenko ◽  
Serhii Antonin ◽  
Roman Redko ◽  
Yuriy Romanuyk ◽  
Alexandra V. Hladkovska ◽  
...  

2000 ◽  
Vol 621 ◽  
Author(s):  
B.S. Satyanarayana ◽  
K. Nishimura ◽  
A. Hiraki ◽  
W.I. Milne

ABSTRACTNovel heterostructured cold cathodes made of nanoseeded diamond and cathodic arc process grown nanocluster carbon films, were studied. The nanocrystalline diamond with varying diamond concentration was first coated on to the substrate. The nanocluster carbon films were then deposited on the nanoseeded diamond coated substrates using the cathodic arc process at room temperature. The resultant heterostructured microcathodes were observed to exhibit electron emission currents of 1μA/cm2 at low fields of 1.2 - 5 V/μm. Further some of the samples seem to exhibit I-V characteristics with a negative differential resistance region at room temperature conditions. This negative differential resistance or the resonant tunneling behaviour was observed to be dependent on the nanoseeded diamond concentration.


2002 ◽  
Vol 12 (04) ◽  
pp. 1083-1100 ◽  
Author(s):  
Y. YU ◽  
R. F. GREENE ◽  
R. TSU

The Inverse Nottingham Effect (INE) cooling involves emission of electrons above the Fermi level into the vacuum. Our scheme involves the use of a Double Barrier Resonant Tunneling (DBRT) section positioned between the surface and the vacuum for a much increased emission, and to provide energy selectivity for assuring cooling, without surface structuring such as tips and ridges leading to current crowding and additional heating. Unlike resonant tunneling from contact-to-contact, where barrier heights and thicknesses are controlled by the choice of heterojunctions, the work function at the surface dictates the barrier height for tunneling into the vacuum. The calculated field emission via resonant tunneling gives at least two orders of magnitude greater than without resonance, however, without work function lowering, the large gain happens at fairly high field. The use of resonance to enhance cooling by INE results in an important byproduct, an efficient cold-cathode field emitter for vacuum electronics.


VLSI Design ◽  
1998 ◽  
Vol 8 (1-4) ◽  
pp. 65-74 ◽  
Author(s):  
Mathieu Kemp ◽  
Vladimiro Mujica ◽  
Adrian Roitberg ◽  
Mark A. Ratner

Molecular wires have several promising features, that would appear to make them ideal for advanced interconnects in nanoscale electronic devices. We discuss several aspects of the linear and nonlinear conductance of molecular wire interconnects. Topics include energy dependence of molecular conductance, resonant tunneling behavior, control of conductance by molecular structure and geometry, length dependence including the tunneling regime energetics. Design rules using molecular interconnects will differ substantially from those with more standard, lithographically structured silicon interconnects. In particular, the dissipation mechanisms will differ, both tunneling and ballistic regimes should be available, coulomb blockade and staircase behavior will be observed (but under differing conditions) and fabrication of gate electrodes is a challenge.


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