A High-Temperature-Resistant Frequency Selective Rasorber with Low-Frequency Diffusion and High-Frequency Transmission

Author(s):  
Chengpeng Liang ◽  
Shuwai Leung ◽  
Yanan Wang ◽  
Mingxing Zhou ◽  
Feifei Li ◽  
...  
Sensors ◽  
2021 ◽  
Vol 21 (4) ◽  
pp. 1521
Author(s):  
Jihoon Lee ◽  
Seungwook Yoon ◽  
Euiseok Hwang

With the development of the internet of things (IoT), the power grid has become intelligent using massive IoT sensors, such as smart meters. Generally, installed smart meters can collect large amounts of data to improve grid visibility and situational awareness. However, the limited storage and communication capacities can restrain their infrastructure in the IoT environment. To alleviate these problems, efficient and various compression techniques are required. Deep learning-based compression techniques such as auto-encoders (AEs) have recently been deployed for this purpose. However, the compression performance of the existing models can be limited when the spectral properties of high-frequency sampled power data are widely varying over time. This paper proposes an AE compression model, based on a frequency selection method, which improves the reconstruction quality while maintaining the compression ratio (CR). For efficient data compression, the proposed method selectively applies customized compression models, depending on the spectral properties of the corresponding time windows. The framework of the proposed method involves two primary steps: (i) division of the power data into a series of time windows with specified spectral properties (high-frequency, medium-frequency, and low-frequency dominance) and (ii) separate training and selective application of the AE models, which prepares them for the power data compression that best suits the characteristics of each frequency. In simulations on the Dutch residential energy dataset, the frequency-selective AE model shows significantly higher reconstruction performance than the existing model with the same CR. In addition, the proposed model reduces the computational complexity involved in the analysis of the learning process.


1979 ◽  
Vol 101 (3) ◽  
pp. 284-292 ◽  
Author(s):  
J. Lemaitre ◽  
A. Plumtree

The damage concept has been developed in terms of strain range in order to give a unified approach to high temperature failure. Interactive tests have been carried out on OFHC copper at 540°C and Sanicro 31 (Alloy 800) at 600°C. For the former, combined strain controlled low frequency and high frequency tests were undertaken whereas the latter metal was subjected to sequential tests involving monotonic creep and high frequency cycling. The damage concept based on non-linear accumulation predicted lives which were in agreement with those observed experimentally for the two materials.


SPIN ◽  
2017 ◽  
Vol 07 (02) ◽  
pp. 1750006 ◽  
Author(s):  
Dennis M. Newns ◽  
Glenn J. Martyna ◽  
Chang C. Tsuei

Superconducting transition temperatures of 164 K in cuprate high temperature superconductors (HTS) and recently 200 K in H3S under high pressure encourage us to believe that room temperature superconductivity (RTS) might be possible. In considering paths to RTS, we contrast conventional (BCS) SC, such as probably manifested by H3S, with the unconventional superconductivity (SC) in the cuprate HTS family. Turning to SC models, we show that in the presence of one or more van Hove singularities (vHs) near the Fermi level, SC mediated by classical phonons ([Formula: see text]phonon frequency) can occur. The phonon frequency in the standard [Formula: see text] formula is replaced by an electronic cutoff, enabling a much higher [Formula: see text] independent of phonon frequency. The resulting [Formula: see text] and isotope shift plot versus doping strongly resembles that seen experimentally in HTS. A more detailed theory of HTS, which involves mediation by classical phonons, satisfactorily reproduces the chief anomalous features characteristic of these materials. We propose that, while a path to RTS through an H3S-like scenario via strongly-coupled ultra-high frequency phonons is attractive, features perhaps unavailable at ordinary pressures, a route involving SC mediated by classical phonons which can be low frequency may be found.


Author(s):  
G. Y. Fan ◽  
J. M. Cowley

It is well known that the structure information on the specimen is not always faithfully transferred through the electron microscope. Firstly, the spatial frequency spectrum is modulated by the transfer function (TF) at the focal plane. Secondly, the spectrum suffers high frequency cut-off by the aperture (or effectively damping terms such as chromatic aberration). While these do not have essential effect on imaging crystal periodicity as long as the low order Bragg spots are inside the aperture, although the contrast may be reversed, they may change the appearance of images of amorphous materials completely. Because the spectrum of amorphous materials is continuous, modulation of it emphasizes some components while weakening others. Especially the cut-off of high frequency components, which contribute to amorphous image just as strongly as low frequency components can have a fundamental effect. This can be illustrated through computer simulation. Imaging of a whitenoise object with an electron microscope without TF limitation gives Fig. 1a, which is obtained by Fourier transformation of a constant amplitude combined with random phases generated by computer.


Author(s):  
M. T. Postek ◽  
A. E. Vladar

Fully automated or semi-automated scanning electron microscopes (SEM) are now commonly used in semiconductor production and other forms of manufacturing. The industry requires that an automated instrument must be routinely capable of 5 nm resolution (or better) at 1.0 kV accelerating voltage for the measurement of nominal 0.25-0.35 micrometer semiconductor critical dimensions. Testing and proving that the instrument is performing at this level on a day-by-day basis is an industry need and concern which has been the object of a study at NIST and the fundamentals and results are discussed in this paper.In scanning electron microscopy, two of the most important instrument parameters are the size and shape of the primary electron beam and any image taken in a scanning electron microscope is the result of the sample and electron probe interaction. The low frequency changes in the video signal, collected from the sample, contains information about the larger features and the high frequency changes carry information of finer details. The sharper the image, the larger the number of high frequency components making up that image. Fast Fourier Transform (FFT) analysis of an SEM image can be employed to provide qualitiative and ultimately quantitative information regarding the SEM image quality.


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