Reduction of Threshold Voltage by Diffusion Control Technique in p-MISFETs Using Poly-Si/TiN/HfSiON Gate Stacks

2007 ◽  
Vol 28 (10) ◽  
pp. 868-870
Author(s):  
Takaaki Kawahara ◽  
Yukio Nishida ◽  
Shinsuke Sakashita ◽  
Masaharu Mizutani ◽  
Masao Inoue ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Control Technique ◽  
Diffusion Control ◽  
Gate Stacks

Impacts of gate electrode materials on threshold voltage (V/sub th/) instability in nMOS HfO/sub 2/ gate stacks under DC and AC stressing

2005 ◽  
Vol 26 (8) ◽  
pp. 553-556 ◽  
Author(s):  
Xuguang Wang ◽  
J. Peterson ◽  
P. Majhi ◽  
M.I. Gardner ◽  
Dim-Lee Kwong
Keyword(s):  
Threshold Voltage ◽  
Electrode Materials ◽  
Gate Stacks ◽  
Gate Electrode

A Novel UVLO Circuit with Current-Mode Control Technique for DC-DC Converters

2013 ◽  
Vol 765-767 ◽  
pp. 2534-2537
Author(s):  
Yun Wu Zhang ◽  
Jing Zhu ◽  
Wei Feng Sun
Keyword(s):  
Threshold Voltage ◽  
Supply Voltage ◽  
Current Mode ◽  
Response Speed ◽  
Fast Response ◽  
Control Technique ◽  
High Threshold ◽  
Current Mode Control ◽  
Mode Control ◽  
Threshold Voltages

A novel Under Voltage Lockout (UVLO) circuit featuring with fast response speed and low temperature coefficient threshold voltages is proposed in this paper. Compared with the conventional structure, the proposed circuit achieves the fast response ability thanks to the current-mode control technique is utilized. Meanwhile, this UVLO realizes hysteretic threshold by a feedback control path to improve the interference rejection capability. In addition, the threshold voltage varies slightly with the variation of the supply voltage and temperature by using a bandgap core. The proposed circuit implemented with 0.5μm BCD technology has an input high threshold voltage of 8.5V and a hysteresis of 1.5V, and start or shut off the power quickly. Test results verified that the proposed UVLO has the qualification to be applied to DC-DC converters.

Two methods of tuning threshold voltage of bulk FinFETs with replacement high-k metal-gate stacks

2017 ◽  
Vol 129 ◽  
pp. 52-60 ◽  
Author(s):  
Miao Xu ◽  
Huilong Zhu ◽  
Yanbo Zhang ◽  
Qiuxia Xu ◽  
Yongkui Zhang ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Gate Stacks ◽  
Metal Gate ◽  
High K

Analysis of the Origin of the Threshold Voltage Change Induced by Impurity in Fully Silicided NiSi/SiO2 gate stacks

2005 ◽  
Author(s):  
Kenzo Manabe ◽  
Kensuke Takahashi ◽  
Takashi Hase ◽  
Nobuyuki Ikarashi ◽  
Makiko Oshida ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Gate Stacks ◽  
Voltage Change

Diffusion control technique in TiN stacked metal gate electrodes for p-MISFETs

2006 ◽  
Author(s):  
S. Sakashita ◽  
T. Kawahara ◽  
M. Mizutani ◽  
M. Inoue ◽  
K. Mori ◽  
...  
Keyword(s):  
Control Technique ◽  
Diffusion Control ◽  
Metal Gate Electrodes ◽  
Metal Gate ◽  
Gate Electrodes
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