Low-Frequency Noise Measurements of AlGaN/GaN Metal–Oxide–Semiconductor Heterostructure Field-Effect Transistors With HfAlO Gate Dielectric

2010 ◽  
Vol 31 (9) ◽  
pp. 1041-1043 ◽  
Author(s):  
Cemil Kayis ◽  
Jacob H. Leach ◽  
C. Y. Zhu ◽  
Mo Wu ◽  
X. Li ◽  
...  
Keyword(s):  
Field Effect ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Semiconductor Heterostructure ◽  
Heterostructure Field Effect Transistors ◽  
Noise Measurements

Low-frequency noise and mobility fluctuations in AlGaN/GaN heterostructure field-effect transistors

2000 ◽  
Vol 76 (23) ◽  
pp. 3442-3444 ◽  
Author(s):  
J. A. Garrido ◽  
B. E. Foutz ◽  
J. A. Smart ◽  
J. R. Shealy ◽  
M. J. Murphy ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure ◽  
Mobility Fluctuations

LOW FREQUENCY NOISE IN GALLIUM NITRIDE FIELD EFFECT TRANSISTORS

2002 ◽  
Vol 12 (02) ◽  
pp. 449-458 ◽  
Author(s):  
SERGEY L. RUMYANTSEV ◽  
MICHAEL S. SHUR ◽  
REMIS GASKA ◽  
MICHAEL. E. LEVINSHTEIN ◽  
M. ASIF KHAN ◽  
...  
Keyword(s):  
Field Effect ◽  
Electron Tunneling ◽  
Field Effect Transistors ◽  
Low Frequency ◽  
Drain Current ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Sources ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure

We report on experimental study of the low frequency noise in GaN-based Field Effect Transistors. In both GaN Metal Semiconductor Field Effect Transistors (MESFETs) and AlGaN/GaN Heterostructure Field Effect Transistors (HFETs), the main noise sources are located in the channel. Gate voltage dependence of noise in MESFETs complies with the Hooge formula and indicates the bulk origin of noise. The dependencies of the Hooge parameter, α, on sheet electron concentration ns in HFETs are extracted from measured drain current fluctuations taking into account the contact resistance, and the resistance of the ungated regions of the transistors. At low channel concentrations α is inversely proportional to ns (α ~ 1/ns). This dependence as well as the temperature dependence of noise might be explained by electron tunneling from the 2D gas into the traps in the bulk GaN or AlGaN.

scholarly journals Low-frequency noise assessment of ferro-electric field-effect transistors with Si-doped HfO2 gate dielectric

AIP Advances ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 015219
Author(s):  
E. Simoen ◽  
B. J. O’Sullivan ◽  
N. Ronchi ◽  
G. Van den Bosch ◽  
D. Linten ◽  
...  
Keyword(s):  
Electric Field ◽  
Field Effect ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
Low Frequency ◽  
Frequency Noise ◽  
Electric Field Effect ◽  
Low Frequency Noise ◽  
Noise Assessment ◽  
Si Doped

Investigations of low-frequency noise of GaN-based heterostructure field-effect transistors

2003 ◽  
Vol 39 (11) ◽  
pp. 877
Author(s):  
S.C. Wei ◽  
Y.K. Su ◽  
T.M. Kuan ◽  
R.L. Wang ◽  
S.J. Chang ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Heterostructure Field Effect Transistors

Low-frequency noise in GaN/AlGaN heterostructure field-effect transistors at cryogenic temperatures

2002 ◽  
Vol 92 (8) ◽  
pp. 4726-4730 ◽  
Author(s):  
S. L. Rumyantsev ◽  
Y. Deng ◽  
E. Borovitskaya ◽  
A. Dmitriev ◽  
W. Knap ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Low Frequency ◽  
Frequency Noise ◽  
Cryogenic Temperatures ◽  
Low Frequency Noise ◽  
Heterostructure Field Effect Transistors

Low Frequency Noise Analysis of Monolithically Fabricated 4H-SiC CMOS Field Effect Transistors

2014 ◽  
Vol 778-780 ◽  
pp. 428-431 ◽  
Author(s):  
Lucy Claire Martin ◽  
Hua Khee Chan ◽  
David T. Clark ◽  
Ewan P. Ramsay ◽  
A.E. Murphy ◽  
...  
Keyword(s):  
Field Effect ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
Noise Analysis ◽  
Low Frequency ◽  
Frequency Noise ◽  
Interface Traps ◽  
Low Frequency Noise ◽  
Noise Characteristics ◽  
The Impact

Low frequency noise in 4H-SiC lateral p-channel metal oxide semiconductor field effect transistors (PMOSFETs) in the frequency range from 1 Hz to 100 kHz has been used to investigate the relationship between gate dielectric fabrication techniques and the resulting density of interface traps at the semiconductor-dielectric interface in order to examine the impact on device performance. The results show that the low frequency noise characteristics in p-channel 4H-SiC MOSFETs in weak inversion are in agreement with the McWhorter model and are dominated by the interaction of channel carriers with interface traps at the gate dielectric/semiconductor interface.

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