Low Frequency Noise Analysis of Monolithically Fabricated 4H-SiC CMOS Field Effect Transistors
2014 ◽
Vol 778-780
◽
pp. 428-431
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Keyword(s):
Low frequency noise in 4H-SiC lateral p-channel metal oxide semiconductor field effect transistors (PMOSFETs) in the frequency range from 1 Hz to 100 kHz has been used to investigate the relationship between gate dielectric fabrication techniques and the resulting density of interface traps at the semiconductor-dielectric interface in order to examine the impact on device performance. The results show that the low frequency noise characteristics in p-channel 4H-SiC MOSFETs in weak inversion are in agreement with the McWhorter model and are dominated by the interaction of channel carriers with interface traps at the gate dielectric/semiconductor interface.
2010 ◽
Vol 49
(8)
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pp. 084201
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Keyword(s):
2010 ◽
Vol 31
(9)
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pp. 1041-1043
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2009 ◽
Vol 48
(4)
◽
pp. 04C042
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Keyword(s):
2019 ◽
Vol 19
(10)
◽
pp. 6422-6428
Keyword(s):
2007 ◽
Vol 23
(2)
◽
pp. 025002
◽
2009 ◽
Vol 27
(3)
◽
pp. 1129