High Mobility Solution-Processed Hafnium Indium Zinc Oxide TFT With an Al-Doped ${\rm ZrO}_{2}$ Gate Dielectric

2014 ◽  
Vol 35 (5) ◽  
pp. 554-556 ◽  
Author(s):  
Yana Gao ◽  
Xifeng Li ◽  
Longlong Chen ◽  
Jifeng Shi ◽  
Xiao Wei Sun ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Gate Dielectric ◽  
High Mobility ◽  
Solution Processed ◽  
Oxide Tft ◽  
Indium Zinc Oxide ◽  
Mobility Solution

High-mobility solution-processed zinc oxide thin films on silicon nitride

2014 ◽  
Vol 8 (10) ◽  
pp. 871-875 ◽  
Author(s):  
Mourad Benlamri ◽  
Kyle M. Bothe ◽  
Alex M. Ma ◽  
Gem Shoute ◽  
Amir Afshar ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Silicon Nitride ◽  
High Mobility ◽  
Oxide Thin Films ◽  
Solution Processed ◽  
Mobility Solution

Solution-Processed Indium-Zinc Oxide Transparent Thin-Film Transistors

2008 ◽  
Vol 11 (1) ◽  
pp. H7 ◽  
Author(s):  
Chaun Gi Choi ◽  
Seok-Jun Seo ◽  
Byeong-Soo Bae
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Solution Processed ◽  
Indium Zinc Oxide

scholarly journals High-Mobility Inkjet-Printed Indium-Gallium-Zinc-Oxide Thin-Film Transistors Using Sr-Doped Al2O3 Gate Dielectric

Materials ◽  
2019 ◽  
Vol 12 (6) ◽  
pp. 852 ◽  
Author(s):  
Seungbeom Choi ◽  
Kyung-Tae Kim ◽  
Sung Park ◽  
Yong-Hoon Kim
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
High Mobility ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Linear Type ◽  
Channel Layer ◽  
Indium Gallium

In this paper, we demonstrate high-mobility inkjet-printed indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) using a solution-processed Sr-doped Al2O3 (SAO) gate dielectric. Particularly, to enhance to the electrical properties of inkjet-printed IGZO TFTs, a linear-type printing pattern was adopted for printing the IGZO channel layer. Compared to dot array printing patterns (4 × 4 and 5 × 5 dot arrays), the linear-type pattern resulted in the formation of a relatively thin and uniform IGZO channel layer. Also, to improve the subthreshold characteristics and low-voltage operation of the device, a high-k and thin (~10 nm) SAO film was used as the gate dielectric layer. Compared to the devices with SiO2 gate dielectric, the inkjet-printed IGZO TFTs with SAO gate dielectric exhibited substantially high field-effect mobility (30.7 cm2/Vs). Moreover, the subthreshold slope and total trap density of states were also significantly reduced to 0.14 V/decade and 8.4 × 1011/cm2·eV, respectively.

High mobility amorphous/nanocrystalline indium zinc oxide deposited at room temperature

2006 ◽  
Vol 502 (1-2) ◽  
pp. 104-107 ◽  
Author(s):  
E. Fortunato ◽  
A. Pimentel ◽  
A. Gonçalves ◽  
A. Marques ◽  
R. Martins
Keyword(s):  
Zinc Oxide ◽  
Room Temperature ◽  
High Mobility ◽  
Indium Zinc Oxide
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