Experimental Investigation of Piezoresistive Effect in p-Type 4H–SiC

2017 ◽  
Vol 38 (7) ◽  
pp. 955-958 ◽  
Author(s):  
Tuan-Khoa Nguyen ◽  
Hoang-Phuong Phan ◽  
Toan Dinh ◽  
Jisheng Han ◽  
Sima Dimitrijev ◽  
...  
Keyword(s):  
Experimental Investigation ◽  
Piezoresistive Effect ◽  
P Type

scholarly journals Study on the Stability of the Electrical Connection of High-Temperature Pressure Sensor Based on the Piezoresistive Effect of P-Type SiC

Micromachines ◽  
2021 ◽  
Vol 12 (2) ◽  
pp. 216
Author(s):  
Yongwei Li ◽  
Ting Liang ◽  
Cheng Lei ◽  
Qiang Li ◽  
Zhiqiang Li ◽  
...  
Keyword(s):  
High Temperature ◽  
Pressure Sensor ◽  
Pressure Sensors ◽  
Extreme Environment ◽  
Maximum Temperature ◽  
Piezoresistive Effect ◽  
Electrical Connection ◽  
Contact Stability ◽  
The Stability ◽  
P Type

In this study, a preparation method for the high-temperature pressure sensor based on the piezoresistive effect of p-type SiC is presented. The varistor with a positive trapezoidal shape was designed and etched innovatively to improve the contact stability between the metal and SiC varistor. Additionally, the excellent ohmic contact was formed by annealing at 950 °C between Ni/Al/Ni/Au and p-type SiC with a doping concentration of 1018cm−3. The aging sensor was tested for varistors in the air of 25 °C–600 °C. The resistance value of the varistors initially decreased and then increased with the increase of temperature and reached the minimum at ~450 °C. It could be calculated that the varistors at ~100 °C exhibited the maximum temperature coefficient of resistance (TCR) of ~−0.35%/°C. The above results indicated that the sensor had a stable electrical connection in the air environment of ≤600 °C. Finally, the encapsulated sensor was subjected to pressure/depressure tests at room temperature. The test results revealed that the sensor output sensitivity was approximately 1.09 mV/V/bar, which is better than other SiC pressure sensors. This study has a great significance for the test of mechanical parameters under the extreme environment of 600 °C.

scholarly journals The effect of strain on the electrical conductance of p-type nanocrystalline silicon carbide thin films

2015 ◽  
Vol 3 (6) ◽  
pp. 1172-1176 ◽  
Author(s):  
Hoang-Phuong Phan ◽  
Dzung Viet Dao ◽  
Li Wang ◽  
Toan Dinh ◽  
Nam-Trung Nguyen ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Electrical Conductance ◽  
Nanocrystalline Silicon ◽  
Harsh Environments ◽  
Gauge Factor ◽  
Mems Sensors ◽  
Piezoresistive Effect ◽  
Nanocrystalline Silicon Carbide ◽  
P Type

A significant piezoresistive effect in p-type nanocrystalline SiC with a gauge factor of 14.5 was reported. This result indicates that p-type nanocrystalline SiC is a good candidate for MEMS sensors used in harsh environments and bio applications.

Analysis of Tunneling Piezoresistive Effect of P-Type Polysilicon Nanofilms

2009 ◽  
Vol 60-61 ◽  
pp. 89-93 ◽  
Author(s):  
Xue Bin Lu ◽  
Xiao Wei Liu ◽  
Rong Yan Chuai ◽  
Chang Zhi Shi ◽  
Ming Xue Huo ◽  
...  
Keyword(s):  
Experimental Data ◽  
Doping Concentration ◽  
Piezoresistive Effect ◽  
Temperature Characteristics ◽  
Piezoresistive Sensor ◽  
P Type

The polysilicon nanofilms have significant piezoresistive characteristics. In this paper, an analysis of tunneling piezoresistive effect of p-type polysilicon nanofilms is presented based on the experimental data. The analysis results show that the tunneling piezoresistive effect is much remarkable than piezoresistive effect of neutral region, and the former is about 1.3 to 1.5 times of the latter. The higher is doping concentration, the more remarkable tunneling piezoresistive effect is. This advantage can be utilized to improve the temperature characteristics of polysilicon piezoresistive sensor.

Piezoresistive Effect in p Type PbTe

1960 ◽  
Vol 31 (4) ◽  
pp. 692-693 ◽  
Author(s):  
Lewis E. Hollander ◽  
T. J. Diesel
Keyword(s):  
Piezoresistive Effect ◽  
P Type

29pm2-F-3 Piezoresistive effect of p-type silicon nanowires fabricated by a top-down process using FIB implantation and wet etching

2015 ◽  
Vol 2015.7 (0) ◽  
pp. _29pm2-F-3-_29pm2-F-3
Author(s):  
Takahiro Kozeki ◽  
Hoang-Phuong Phan ◽  
Dzung Viet Dao ◽  
Shozo Inoue ◽  
Takahiro Namazu
Keyword(s):  
Silicon Nanowires ◽  
Wet Etching ◽  
Top Down ◽  
Piezoresistive Effect ◽  
Type Silicon ◽  
P Type

THEORETICAL STUDIES ON PIEZORESISTIVE EFFECT OF P-TYPE DIAMOND FILMS

2002 ◽  
Vol 16 (06n07) ◽  
pp. 916-921
Author(s):  
W. L. WANG ◽  
K. J. LIAO ◽  
C. Z. CAI ◽  
C. Y. KONG ◽  
S. X. WANG
Keyword(s):  
Diamond Films ◽  
Uniaxial Stress ◽  
Theoretical Description ◽  
Boltzmann Transport ◽  
Piezoresistive Effect ◽  
Relaxation Time Approximation ◽  
Hole Band ◽  
Mixed Scattering ◽  
P Type ◽  
Good Agreement

In this paper, based on the Fuchs and Sondheimer theory and valence band split-off model, a theoretical description of the piezoresistive effect in P-type heteroepitaxial diamond films was presented by solving the Boltzmann transport equation in the relaxation time approximation, in which a mixed scattering by lattice vibration, ionized impurities and surface was considered. A calculating expression of the piezoresistive effect has been developed in a parallel connection resistance model for the light-hole band, the heavy-hole band and the split-off band. The calculating results were in good agreement with the experimental data, indicating that the prezoresistive effect in diamond films was mainly ascribed to the hole band split-off under a uniaxial stress.

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