High-Quality Solution-Processed Metal-Oxide Gate Dielectrics Realized With a Photo-Activated Metal-Oxide Nanocluster Precursor

2018 ◽  
Vol 39 (11) ◽  
pp. 1668-1671 ◽  
Author(s):  
Jeong-Wan Jo ◽  
Kyung-Tae Kim ◽  
Antonio Facchetti ◽  
Myung-Gil Kim ◽  
Sung Kyu Park
Keyword(s):  
Metal Oxide ◽  
Gate Dielectrics ◽  
High Quality ◽  
Solution Processed ◽  
Nanocluster Precursor

scholarly journals Frequency-Stable Ionic-Type Hybrid Gate Dielectrics for High Mobility Solution-Processed Metal-Oxide Thin-Film Transistors

Materials ◽  
2017 ◽  
Vol 10 (6) ◽  
pp. 612 ◽  
Author(s):  
Jae Heo ◽  
Seungbeom Choi ◽  
Jeong-Wan Jo ◽  
Jingu Kang ◽  
Ho-Hyun Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Thin Film Transistors ◽  
Gate Dielectrics ◽  
High Mobility ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Metal Oxide Thin Film ◽  
Mobility Solution

Solution-processed lanthanum-doped Al2O3 gate dielectrics for high-mobility metal-oxide thin-film transistors

2018 ◽  
Vol 660 ◽  
pp. 814-818 ◽  
Author(s):  
Jaeyoung Kim ◽  
Seungbeom Choi ◽  
Jeong-Wan Jo ◽  
Sung Kyu Park ◽  
Yong-Hoon Kim
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Thin Film Transistors ◽  
Gate Dielectrics ◽  
High Mobility ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Metal Oxide Thin Film

scholarly journals Solution processed lanthanum aluminate gate dielectrics for use in metal oxide-based thin film transistors

2015 ◽  
Vol 106 (20) ◽  
pp. 203507 ◽  
Author(s):  
M. Esro ◽  
R. Mazzocco ◽  
G. Vourlias ◽  
O. Kolosov ◽  
A. Krier ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Thin Film Transistors ◽  
Gate Dielectrics ◽  
Solution Processed ◽  
Lanthanum Aluminate

Doped Metal Oxide Nanocrystals for Solution-Processed Hole Extraction Layers in High Efficient Organic Solar Cells

2018 ◽  
Author(s):  
Riva Alkarsifi ◽  
Florent Pourcin ◽  
Pavlo Perkhun ◽  
Mats Fahlman ◽  
Christine Videlot-Ackermann ◽  
...  
Keyword(s):  
Solar Cells ◽  
Metal Oxide ◽  
Organic Solar Cells ◽  
Solution Processed ◽  
High Efficient

Low temperature solution processed high-κ ZrO2 gate dielectrics for nanoelectonics

2016 ◽  
Vol 370 ◽  
pp. 373-379 ◽  
Author(s):  
Arvind Kumar ◽  
Sandip Mondal ◽  
K.S.R. Koteswara Rao
Keyword(s):  
Low Temperature ◽  
Gate Dielectrics ◽  
Solution Processed ◽  
Temperature Solution
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