Zn-Diffusion InAs Photodiodes on a Semi-Insulating GaAs Substrate for High-Speed and Low Dark-Current Performance

2011 ◽  
Vol 23 (2) ◽  
pp. 100-102 ◽  
Author(s):  
J.-W. Shi ◽  
F.-M. Kuo ◽  
B.-R. Huang
Keyword(s):  
Dark Current ◽  
Gaas Substrate ◽  
High Speed ◽  
Zn Diffusion

High speed waveguide uni-traveling carrier InGaAs/InP photodiodes fabricated by Zn diffusion doping

2021 ◽  
pp. 1-1
Author(s):  
Lichen Zhang ◽  
Xiaobo La ◽  
Xuyuan Zhu ◽  
Jing Guo ◽  
Ling Juan Zhao ◽  
...  
Keyword(s):  
High Speed ◽  
Zn Diffusion

scholarly journals Dark current analysis in high-speed germanium p-i-n waveguide photodetectors

2016 ◽  
Vol 119 (21) ◽  
pp. 213105 ◽  
Author(s):  
H. Chen ◽  
P. Verheyen ◽  
P. De Heyn ◽  
G. Lepage ◽  
J. De Coster ◽  
...  
Keyword(s):  
Dark Current ◽  
High Speed ◽  
Current Analysis

Reducing dark current in a high-speed si-based interdigitated trench-electrode msm photodetector

2003 ◽  
Vol 50 (5) ◽  
pp. 1306-1313 ◽  
Author(s):  
Cha-Shin Lin ◽  
Yun-Chen Chang ◽  
Rong-Hwei Yeh ◽  
Jyh-Wong Hong
Keyword(s):  
Dark Current ◽  
High Speed ◽  
Msm Photodetector

Fabrication of Simple GaAs Solar Cell by Zn Diffusion Method

2013 ◽  
Vol 684 ◽  
pp. 312-316 ◽  
Author(s):  
Sheng Po Chang
Keyword(s):  
Solar Cell ◽  
High Temperature ◽  
Surface Morphology ◽  
Gaas Substrate ◽  
Substrate Surface ◽  
Temperature Treatment ◽  
High Temperature Treatment ◽  
Diffusion Method ◽  
Dopant Content ◽  
Zn Diffusion

We reported the spin-on Zincsilicafilm dopant content of the diffusion process and the formation of the p+ layer were applied to fabricate GaAs solar cells and their characteristics were investigated. The p-n junction was formed by a thermal furnace from the diffusion of zinc into the GaAs substrate. It was found that the GaAs substrate must be covered by a 100-nm-thick SiO2 layer. This reduced the damage to the GaAs substrate surface morphology that occurred during high temperature treatment and made the cleaning of the residual solvate on the surface easier

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