Continuous-Wave Operation of Blue Laser Diodes Based on Nonpolarm-Plane Gallium Nitride

2007 ◽  
Vol 1 (1) ◽  
pp. 011102 ◽  
Author(s):  
Masashi Kubota ◽  
Kuniyoshi Okamoto ◽  
Taketoshi Tanaka ◽  
Hiroaki Ohta
Keyword(s):  
Gallium Nitride ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Blue Laser ◽  
Continuous Wave Operation

GaN-Based Blue Laser Diodes With 2.2 W of Light Output Power Under Continuous-Wave Operation

2017 ◽  
Vol 29 (24) ◽  
pp. 2203-2206 ◽  
Author(s):  
Jianping Liu ◽  
Liqun Zhang ◽  
Deyao Li ◽  
Kun Zhou ◽  
Yang Cheng ◽  
...  
Keyword(s):  
Output Power ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Light Output ◽  
Blue Laser ◽  
Light Output Power ◽  
Continuous Wave Operation

scholarly journals Demonstration of enhanced continuous-wave operation of blue laser diodes on a semipolar 202¯1¯ GaN substrate using indium-tin-oxide/thin-p-GaN cladding layers

2018 ◽  
Vol 26 (2) ◽  
pp. 1564 ◽  
Author(s):  
Shlomo Mehari ◽  
Daniel A. Cohen ◽  
Daniel L. Becerra ◽  
Shuji Nakamura ◽  
Steven P. DenBaars
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Blue Laser ◽  
Continuous Wave Operation ◽  
Cladding Layers

1.42 [micro sign]m continuous-wave operation of GaInNAs laser diodes

2003 ◽  
Vol 39 (10) ◽  
pp. 777 ◽  
Author(s):  
D. Gollub ◽  
S. Moses ◽  
M. Fischer ◽  
A. Forchel
Keyword(s):  
Continuous Wave ◽  
Laser Diodes ◽  
Continuous Wave Operation

GaN-based blue laser diode with 6.0 W of output power under continuous-wave operation at room temperature

2021 ◽  
Vol 42 (11) ◽  
pp. 112801
Author(s):  
Feng Liang ◽  
Degang Zhao ◽  
Zongshun Liu ◽  
Ping Chen ◽  
Jing Yang ◽  
...  
Keyword(s):  
Laser Diode ◽  
Room Temperature ◽  
Continuous Wave ◽  
Chemical Vapor ◽  
Threshold Current ◽  
Stimulated Emission ◽  
Blue Laser ◽  
Organic Chemical ◽  
Blue Laser Diode ◽  
Continuous Wave Operation

Abstract In this work, we reported the room-temperature continuous-wave operation of 6.0 W GaN-based blue laser diode (LD), and its stimulated emission wavelength is around 442 nm. The GaN-based high power blue LD is grown on a c-plane GaN substrate by metal organic chemical vapor deposition (MOCVD), and the width and length of the ridge waveguide structure are 30 and 1200 μm, respectively. The threshold current is about 400 mA, and corresponding threshold current density is 1.1 kA/cm2.

scholarly journals Room Temperature CW Operation of GaN-based Blue Laser Diodes by GaInN/GaN optical guiding layers

2000 ◽  
Vol 5 (S1) ◽  
pp. 1-7 ◽  
Author(s):  
Masayoshi Koike ◽  
Shiro Yamasaki ◽  
Yuta Tezen ◽  
Seiji Nagai ◽  
Sho Iwayama ◽  
...  
Keyword(s):  
Room Temperature ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Threshold Current ◽  
Crystal Defects ◽  
Blue Laser ◽  
Buffer Layers ◽  
Continuous Wave Laser ◽  
Cw Operation ◽  
First Time

GaN-based short wavelength laser diodes are the most promising key device for a digital versatile disk. We have been improving the important points of the laser diodes in terms of optical guiding layers, mirror facets. The continuous wave laser irradiation at room temperature could be achieved successfully by reducing the threshold current to 60 mA (4 kA/cm2). We have tried to apply the multi low temperature buffer layers to the laser diodes for the first time to reduce the crystal defects.

InGaN/GaN/AiGaN-Based Laser Diodes with an Estimated Lifetime of Longer than 10,000 Hours

1997 ◽  
Vol 482 ◽  
Author(s):  
Shuji Nakamura
Keyword(s):  
High Frequency ◽  
Continuous Wave ◽  
Optical Feedback ◽  
Laser Diodes ◽  
Continuous Wave Operation ◽  
Operating Current ◽  
Strained Layer Superlattice ◽  
Cladding Layers ◽  
Multi Quantum Well ◽  
Structure Laser

AbstractInGaN multi-quantum-well (MQW) structure laser diodes with A10.14Ga0.86N/GaN modulation doped strained-layer superlattice cladding layers grown on an epitaxially laterally overgrown GaN substrate were demonstrated to have an estimated lifetime of more than 10,000 hours under continuous-wave operation at 20°C. Under operation at a high temperature of 50°C, the lifetime was longer than 1,000 hours. The activation energy of the lifetime was estimated to be 0.5 eV. With the operating current increasing above the threshold, a self-pulsation with a high frequency of 3.5 GHz was observed. The relative intensity noise (RIN) less than -145 dB/Hz was obtained even at the 6% optical feedback using the high-frequency modulation of 600 MHz. The threshold carrier density of the InGaN MQW-structure LDs was estimated to be 3 × 1019/cm3 using a carrier lifetime of 1.8 ns.

Green-to-Yellow Continuous-Wave Operation of BeZnCdSe Quantum-Well Laser Diodes at Room Temperature

2011 ◽  
Vol 4 (8) ◽  
pp. 082102 ◽  
Author(s):  
Jun-ichi Kasai ◽  
Ryouichi Akimoto ◽  
Toshifumi Hasama ◽  
Hiroshi Ishikawa ◽  
Sumiko Fujisaki ◽  
...  
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Quantum Well Laser ◽  
Continuous Wave Operation

Room-Temperature Continuous-Wave Operation of InGaN-Based Blue-Violet Laser Diodes with a Lifetime of 15.6 Hours

2010 ◽  
Vol 27 (11) ◽  
pp. 114215 ◽  
Author(s):  
Zeng Chang ◽  
Zhang Shu-Ming ◽  
Ji Lian ◽  
Wang Huai-Bing ◽  
Zhao De-Gang ◽  
...  
Keyword(s):  
Room Temperature ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Continuous Wave Operation
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