Design, processing and operation of a large area pin diode radiation detector

2002 ◽  
Author(s):  
D. Krizaj ◽  
D. Resnik ◽  
D. Vrtancnik ◽  
U. Uljancic ◽  
S. Amon ◽  
...  
Keyword(s):  
Radiation Detector ◽  
Pin Diode ◽  
Large Area

Measurement of Local Temperatures Using µ-Raman of SiC and AlGaN-GaN/SiC Power and RF Devices

2008 ◽  
Vol 600-603 ◽  
pp. 1111-1114 ◽  
Author(s):  
Orest J. Glembocki ◽  
Joshua D. Caldwell ◽  
Jeffrey A. Mittereder ◽  
Jeffrey P. Calame ◽  
Steven C. Binari ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Thermal Imaging ◽  
Single Point ◽  
Pin Diode ◽  
Large Area ◽  
Pin Diodes ◽  
Average Temperature ◽  
Rf Devices ◽  
Operating Temperatures

Confocal μ-Raman was used to measure the operating temperatures in SiC MESFETS, AlGaN/GaN/SiC HEMT’s and 4H-SiC PiN diodes. Temperatures obtained from thermal imaging of the MESFETS compared well with those measured from Raman scattering. Operating temperatures were also obtained for large area PiN diode and it was shown that a single point at the center of the device can be used to measure the average temperature.

Characterization of a Large Area Silicon Carbide PiN Diode at Temperatures up to 900°C

2012 ◽  
Vol 2012 (HITEC) ◽  
pp. 000384-000387 ◽  
Author(s):  
Jim Richmond ◽  
Lin Cheng ◽  
Anant Agarwal ◽  
John Palmour
Keyword(s):  
Silicon Carbide ◽  
Room Temperature ◽  
Extreme Temperature ◽  
Temperature Gradients ◽  
Pin Diode ◽  
Large Area ◽  
Chip Area ◽  
Electrical Connections ◽  
First Time

For the first time, a large area Silicon Carbide (SiC) PiN diode was measured to determine the forward and reverse characteristics at temperatures up to 900°C. The diode characterized had a chip area of 64 mm2 and used a conventional SiC PiN structure with a 75 um N type blocking layer thickness. A normal rating for this device at room temperature would be 50 amps at 100 A/cm2 and 6 kV. Since a package capable of operating at 900°C was not available, methods were developed to heat and verify the temperature of the diode die, provide electrical connections to the die and provide adequate insulation to minimize temperature gradients across the die. Even at this extreme temperature the diode maintained typical diode characteristics and maintained surprisingly good performance.

Towards Imaging with Polycrystalline Mercuric Iodide Semiconductor Detectors

1997 ◽  
Vol 487 ◽  
Author(s):  
M. Schieber ◽  
A. Zuck ◽  
M. Braiman ◽  
L. Melekhov ◽  
J. Nissenbaum ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Screen Printing ◽  
Radiation Detector ◽  
Nuclear Radiation ◽  
Semiconductor Detectors ◽  
Pixel Detector ◽  
Mercuric Iodide ◽  
X Ray Diffraction ◽  
Large Area ◽  
X Ray

AbstractPreparation of polycrystalline mercuric iodide very thin (1 μm) films using laser ablation and thick films (100–600μm), using hot pressing, hot wall vapor deposition and screen printing methods, fabricated as radiation detector plates are briefly described. X-ray diffraction, photoluminescence and optical microscopic measurements as well as response to nuclear radiation will be given. Finally, recent results obtained with a large area imaging pixel detector will be shown.

Mapping of Large Area Cadmium Zinc Telluride (CZT) Wafers: Apparatus and Methods

1997 ◽  
Vol 487 ◽  
Author(s):  
B. A. Brunett ◽  
J. M. Van Scyoc ◽  
H. Yoon ◽  
T. S. Gilbert ◽  
T. E. Schlesinger ◽  
...  
Keyword(s):  
Transport Properties ◽  
Cadmium Zinc Telluride ◽  
Radiation Detector ◽  
Zinc Telluride ◽  
Hole Transport ◽  
Device Fabrication ◽  
Great Promise ◽  
Large Area ◽  
Detector Performance ◽  
Cadmium Zinc

AbstractCadmium Zinc Telluride (CZT) shows great promise as a semiconductor radiation detector material. CZT possesses advantageous material properties over other radiation detector materials in use today, such as a high intrinsic resistivity and a high cross-section for x and γ-rays. However, presently available CZT is not without limitations. The hole transport properties severely limit the performance of these detectors, and the yield of material possessing adequate electron transport properties is currently much lower than desired. The result of these material deficiencies is a lack of inexpensive CZT crystals of large volume for several radiation detector applications. One approach to help alleviate this problem is to measure the spatial distribution (or map) the electrical properties of large area CZT wafers prior to device fabrication. This mapping can accomplish two goals: identify regions of the wafers suitable for detector fabrication and correlate the distribution of crystalline defects with the detector performance. The results of this characterization can then be used by the crystal manufacturers to optimize their growth processes. In this work, we discuss the design and performance of apparatus for measuring the electrical characteristics of entire CZT wafers (up to 10 cm × 10 cm). The data acquisition and manipulation will be discussed and some typical data will be presented.

Development of Large Area (up to 1.5 cm2) 4H-SiC 10 kV Junction Barrier Schottky Rectifiers

2008 ◽  
Vol 600-603 ◽  
pp. 931-934 ◽  
Author(s):  
Brett A. Hull ◽  
Joseph J. Sumakeris ◽  
Michael J. O'Loughlin ◽  
Q. Jon Zhang ◽  
Jim Richmond ◽  
...  
Keyword(s):  
Pin Diode ◽  
Large Area ◽  
Forward Voltage ◽  
Pin Diodes ◽  
Substrate Quality ◽  
Schottky Rectifiers ◽  
Dc Characteristics ◽  
Recovery Performance ◽  
Made In ◽  
Performance Comparisons

DC characteristics and reverse recovery performance of 4H-SiC Junction Barrier Schottky (JBS) diodes capable of blocking in excess of 10 kV with forward conduction of 20 A at a forward voltage of less than 4 V are described. Performance comparisons are made to a similarly rated 10 kV 4H-SiC PiN diode. The JBS diodes show a significant improvement in reverse recovery stored charge as compared to PiN diodes, showing half of the stored charge at 25°C and a quarter of the stored charge at 125°C when switched to 3 kV blocking. These large area JBS diodes were also employed to demonstrate the tremendous advances that have recently been made in 4H-SiC substrate quality.

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