Characterization of a Large Area Silicon Carbide PiN Diode at Temperatures up to 900°C

2012 ◽  
Vol 2012 (HITEC) ◽  
pp. 000384-000387 ◽  
Author(s):  
Jim Richmond ◽  
Lin Cheng ◽  
Anant Agarwal ◽  
John Palmour
Keyword(s):  
Silicon Carbide ◽  
Room Temperature ◽  
Extreme Temperature ◽  
Temperature Gradients ◽  
Pin Diode ◽  
Large Area ◽  
Chip Area ◽  
Electrical Connections ◽  
First Time

For the first time, a large area Silicon Carbide (SiC) PiN diode was measured to determine the forward and reverse characteristics at temperatures up to 900°C. The diode characterized had a chip area of 64 mm2 and used a conventional SiC PiN structure with a 75 um N type blocking layer thickness. A normal rating for this device at room temperature would be 50 amps at 100 A/cm2 and 6 kV. Since a package capable of operating at 900°C was not available, methods were developed to heat and verify the temperature of the diode die, provide electrical connections to the die and provide adequate insulation to minimize temperature gradients across the die. Even at this extreme temperature the diode maintained typical diode characteristics and maintained surprisingly good performance.

scholarly journals Synthesis and electrical characterization of Ca2Nd4Ti6O20 ceramics

2016 ◽  
Vol 34 (1) ◽  
pp. 164-168
Author(s):  
Raz Muhammad ◽  
Muhammad Uzair ◽  
M. Javid Iqbal ◽  
M. Jawad Khan ◽  
Yaseen Iqbal ◽  
...  
Keyword(s):  
Activation Energy ◽  
Dielectric Constant ◽  
Room Temperature ◽  
Sol Gel ◽  
Electrical Characterization ◽  
Sintered Sample ◽  
First Time ◽  
Alkoxide Precursors ◽  
Room Temperature Dielectric Constant

AbstractCa2Nd4Ti6O20, a layered perov skite structured material was synthesized via a chemical (citrate sol-gel) route for the first time using nitrates and alkoxide precursors. Phase analysis of a sample sintered at 1625 °C revealed the formation of an orthorhombic (Pbn21) symmetry. The microstructure of the sample after sintering comprised rod-shaped grains of a size of 1.5 to 6.5µm. The room temperature dielectric constant of the sintered sample was 38 at 100 kHz. The remnant polarization (Pr) and the coercive field (Ec) were about 400 μC/cm2 and 8.4 kV/cm, respectively. Impedance spectroscopy revealed that the capacitance (13.7 pF) and activation energy (1.39 eV) of the grain boundary was greater than the capacitance (5.7 pF) and activation energy (1.13 eV) of the grain.

Quadrol-Pd(II) complexes: phosphine-free precatalysts for the room-temperature Suzuki-Miyaura synthesis of nucleoside analogues in aqueous media

2022 ◽  
Author(s):  
Jose Luis Serrano ◽  
Sujeet Gaware ◽  
Jose Antonio Pérez de Haro ◽  
Jose Pérez ◽  
Pedro Lozano ◽  
...  
Keyword(s):  
Room Temperature ◽  
Aqueous Media ◽  
Water Soluble ◽  
Nucleoside Analogues ◽  
Synthesis And Characterization ◽  
First Time

Commercially available Quadrol, N,N,N',N'-tetrakis(2-hydroxypropyl)ethylenediamine (THPEN), has been used for the first time as N^N- donor neutral hydrophilic ligand in the synthesis and characterization of new water soluble palladium (II) complexes...

scholarly journals Multifractal characterization of epitaxial silicon carbide on silicon

2017 ◽  
Vol 35 (3) ◽  
pp. 539-547
Author(s):  
Ştefan Ţălu ◽  
Sebastian Stach ◽  
Shikhgasan Ramazanov ◽  
Dinara Sobola ◽  
Guseyn Ramazanov
Keyword(s):  
Silicon Carbide ◽  
Surface Condition ◽  
Three Dimensional ◽  
Epitaxial Silicon ◽  
Large Area ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Nano Size

AbstractThe purpose of this study was to investigate the topography of silicon carbide films at two steps of growth. The topography was measured by atomic force microscopy. The data were processed for extraction of information about surface condition and changes in topography during the films growth. Multifractal geometry was used to characterize three-dimensional micro- and nano-size features of the surface. X-ray measurements and Raman spectroscopy were performed for analysis of the films composition. Two steps of morphology evolution during the growth were analyzed by multifractal analysis. The results contribute to the fabrication of silicon carbide large area substrates for micro- and nanoelectronic applications.

scholarly journals Bright Silicon Carbide Single-Photon Emitting Diodes at Low Temperatures: Toward Quantum Photonics Applications

Nanomaterials ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 3177
Author(s):  
Igor A. Khramtsov ◽  
Dmitry Yu. Fedyanin
Keyword(s):  
Silicon Carbide ◽  
Spectral Properties ◽  
Room Temperature ◽  
Single Photon ◽  
Numerical Approach ◽  
Color Centers ◽  
Electrical Excitation ◽  
High Brightness ◽  
Quantum Photonics ◽  
First Time

Color centers in silicon carbide have recently emerged as one of the most promising emitters for bright single-photon emitting diodes (SPEDs). It has been shown that, at room temperature, they can emit more than 109 photons per second under electrical excitation. However, the spectral emission properties of color centers in SiC at room temperature are far from ideal. The spectral properties could be significantly improved by decreasing the operating temperature. However, the densities of free charge carriers in SiC rapidly decrease as temperature decreases, which reduces the efficiency of electrical excitation of color centers by many orders of magnitude. Here, we study for the first time the temperature characteristics of SPEDs based on color centers in 4H-SiC. Using a rigorous numerical approach, we demonstrate that although the single-photon electroluminescence rate does rapidly decrease as temperature decreases, it is possible to increase the SPED brightness to 107 photons/s at 100 K using the recently predicted effect of hole superinjection in homojunction p-i-n diodes. This gives the possibility to achieve high brightness and good spectral properties at the same time, which paves the way toward novel quantum photonics applications of electrically driven color centers in silicon carbide.

Electrical Characterization of Large Area 800 V Enhancement-Mode SiC VJFETs for High Temperature Applications

2009 ◽  
Vol 615-617 ◽  
pp. 715-718 ◽  
Author(s):  
Andrew Ritenour ◽  
Volodymyr Bondarenko ◽  
Robin L. Kelley ◽  
David C. Sheridan
Keyword(s):  
High Temperature ◽  
Elevated Temperature ◽  
Threshold Voltage ◽  
Room Temperature ◽  
Electrical Characterization ◽  
Saturation Current ◽  
Large Area ◽  
Enhancement Mode ◽  
High Temperature Operation

Prototype 800 V, 47 A enhancement-mode SiC VJFETs have been developed for high temperature operation (250 °C). With an active area of 23 mm2 and target threshold voltage of +1.25 V, these devices exhibited a 28 m room temperature on-resistance and excellent blocking characteristics at elevated temperature. With improved device packaging, on-resistance and saturation current values of 15 m and 100 A, respectively, are achievable.

High Temperature Characterization Of Ni, W And Al Contacts To 3C-Silicon Carbide Thin Films

1997 ◽  
Vol 483 ◽  
Author(s):  
C Jacob ◽  
P Pirouz ◽  
H-I Kuo ◽  
M Mehregany
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Contact Resistance ◽  
Room Temperature ◽  
Specific Contact Resistance ◽  
Large Area ◽  
Fermi Level Pinning ◽  
Specific Contact ◽  
Current Availability ◽  
Sic Films

AbstractWith the current availability of large-area 3C-SiC films, it is imperative that stable high temperature contacts be developed for high power devices. By comparing the existing data in the literature, we demonstrate that the contact behavior on each of the different polytypes of SiC will vary significantly. In particular, we demonstrate this for 6H-SiC and 3C-SiC. The interface slope parameter, S, which is a measure of the Fermi-level pinning in each system varies between 0.4–0.5 on 6H-SiC, while it is 0.6 on 3C-SiC. This implies that the barrier heights of contacts to 3C-SiC will vary more significantly with the choice of metal than for 6H-SiC.Aluminum, nickel and tungsten were deposited on 3C-SiC films and their specific contact resistance measured using the circular TLM method. High temperature measurements (up to 400°C) were performed to determine the behavior of these contacts at operational temperatures. Aluminum was used primarily as a baseline for comparison since it melts at 660°C and cannot be used for very high temperature contacts. The specific contact resistance (ρc) for nickel at room temperature was 5 × 10−4 Ω-cm2, but increased with temperature to a value of 1.5 × 10−3 Ω-cm2 at 400°C. Tungsten had a higher room temperature × 10−3 Ω-cm2, which remained relatively constant with increasing temperature up to 400°C. This is related to the fact that there is hardly any reaction between tungsten and silicon carbide even up to 900°C, whereas nickel almost completely reacts with SiC by that temperature. Contact resistance measurements were also performed on samples that were annealed at 500°C.

The Growth and Characterization of Large Diameter Silicon Carbide Substrates

2000 ◽  
Vol 640 ◽  
Author(s):  
A. Gupta ◽  
M. Yoganathan ◽  
J. Burton ◽  
N. Byrd ◽  
A. Dimondi ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Raman Spectroscopy ◽  
Room Temperature ◽  
New Technologies ◽  
Large Diameter ◽  
Wide Band ◽  
Wide Band Gap ◽  
High Quality ◽  
Industrial Environment

ABSTRACTAffordable, high quality SiC wafers are very desirable for a variety of new technologies including GaN based lighting, RF, and high-power electronics based on wide band gap materials. At Litton Airtron we have a major effort in the growth and characterization of SiC. We will present data on 35, 50 and 75-mm diameter crystals. We are growing both n-type, semiinsulating 4H, 6H, and 15R material. A variety of characterization techniques are being used at Litton Airtron to determine wafer quality. These include Raman microscopy, digital wafer photography, and crossed polarizer images. Raman spectroscopy is an excellent probe of polytype and carrier concentration for n-type materials; in addition it can be done at room temperature and is sufficiently fast that it can be used in an industrial environment. The use of digital photography allows for the collection of images that can be quantitatively analyzed and archived.

100 Amp, 1000 Volt Class 4H-Silicon Carbide MOSFET Modules

2009 ◽  
Vol 615-617 ◽  
pp. 899-902 ◽  
Author(s):  
Peter A. Losee ◽  
Kevin Matocha ◽  
Steve Arthur ◽  
Eladio Delgado ◽  
Richard Beaupre ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Room Temperature ◽  
Schottky Diodes ◽  
High Current ◽  
Large Area ◽  
Power Switching ◽  
Switching Performance ◽  
Switching Characteristics

The development of large area, up to 70m/1kV (0.45cm x 0.45cm) 4H-SiC vertical DMOSFETs is presented. DC and switching characteristics of high-current, 100Amp All-SiC power switching modules are demonstrated using 0.45cm x 0.225cm DMOSFET die and commercial Schottky diodes. The switching performance from room temperature up to T=200°C of the All-SiC modules is presented, with as much as ten times lower losses than co-fabricated Si-based modules using commercial IGBTs.

Preparation and Characterization of 3C-SiC Heteroepitaxial Layers on Si(111)

1992 ◽  
Vol 242 ◽  
Author(s):  
Mitsugu Yamanaka ◽  
Keiko Ikoma
Keyword(s):  
Hall Mobility ◽  
Carrier Density ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Similar Temperature Dependence ◽  
Temperature Dependences ◽  
Similar Temperature ◽  
First Time ◽  
Heteroepitaxial Layers

ABSTRACT3C-SiC layers were grown on Si(111) substrates by chemical vapor deposition (CVD) using SiH4-CH3CI-H2 gas mixture. 3C-SiC(111) heteroepitaxial layers were obtained with smooth surfaces and reduced warpage. All the epilayers were n- type, and the carrier density and Hall mobility were 2.1×1016∼2.8×1017 cm-3 and 120∼180 cm2/Vs at room temperature, respectively. Temperature dependences of the electrical properties of the self-supported 3C-SiC(111) epilayers were measured between 15 and 300 K for the first time. 3C-SiC(111) epilayers showed a similar temperature dependence of carrier density to 3C-SiC(001) heteroepitaxial layer. Hall mobility was maximum (∼360 cm2/Vs) around 100 K.

scholarly journals Constructing magnetic Si–C–Fe hybrid microspheres for room temperature nitroarenes reduction

2017 ◽  
Vol 5 (22) ◽  
pp. 10986-10997 ◽  
Author(s):  
Xiaofei Zhang ◽  
Lixin Chen ◽  
Jin Yun ◽  
Xiaodong Wang ◽  
Jie Kong
Keyword(s):  
Room Temperature ◽  
Environmental Pollutants ◽  
Catalytic Performance ◽  
Synthesis And Characterization ◽  
Fine Chemicals ◽  
Temperature Reduction ◽  
First Time

In this work, we present, for the first time, the synthesis and characterization of magnetic Si–C–Fe hybrid microspheres and their catalytic performance in room temperature reduction of nitroarenes as a representative sustainable process for converting environmental pollutants to fine chemicals.

Sign in / Sign up

Export Citation Format

Share Document