Tensile fracture behavior of single crystal silicon film having a notch of sub-micron-length

2005 ◽  
Author(s):  
Xueping Li ◽  
T. Kasai ◽  
T. Ando ◽  
M. Shikida ◽  
K. Sato
Keyword(s):  
Single Crystal ◽  
Fracture Behavior ◽  
Silicon Film ◽  
Single Crystal Silicon ◽  
Tensile Fracture ◽  
Crystal Silicon

Transfer of an ultrathin single crystal silicon film from a Silicon On Insulator to a polymer

2020 ◽  
pp. 100107
Author(s):  
L.G. Michaud ◽  
E. Azrak ◽  
C. Castan ◽  
F. Fournel ◽  
F. Rieutord ◽  
...  
Keyword(s):  
Single Crystal ◽  
Silicon Film ◽  
Single Crystal Silicon ◽  
Silicon On Insulator ◽  
Crystal Silicon

scholarly journals Fracture behavior of single crystal silicon with thermal oxide layer

2016 ◽  
Vol 163 ◽  
pp. 523-532 ◽  
Author(s):  
Toshiyuki Tsuchiya ◽  
Kenji Miyamoto ◽  
Koji Sugano ◽  
Osamu Tabata
Keyword(s):  
Single Crystal ◽  
Oxide Layer ◽  
Fracture Behavior ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Thermal Oxide

scholarly journals 21318 Evaluation of Fracture behavior and Fracture Toughness on Single Crystal Silicon Wafers

2009 ◽  
Vol 2009.15 (0) ◽  
pp. 537-538
Author(s):  
Hiroshi NAKAMURA ◽  
Masayoshi MIYASAKA ◽  
Ryota YANAGIDA ◽  
Masayoshi TATENO
Keyword(s):  
Fracture Toughness ◽  
Single Crystal ◽  
Fracture Behavior ◽  
Single Crystal Silicon ◽  
Silicon Wafers ◽  
Crystal Silicon

Lateral Seeding of Silicon-On-Insulator Using an Elliptical Laser Beam: A Comparison of Scanning Methods

1984 ◽  
Vol 33 ◽  
Author(s):  
P. Zorabedian ◽  
T. I. Kamins
Keyword(s):  
Laser Beam ◽  
Single Crystal ◽  
Leakage Current ◽  
Silicon Film ◽  
Stacking Faults ◽  
Single Crystal Silicon ◽  
Silicon On Insulator ◽  
Crystal Silicon ◽  
Mos Transistor ◽  
Lateral Offset

ABSTRACTTwo scanning methods for laterally-seeded recrystallization of striped silicon-on-insulator/seed structures with an elliptical laser beam are discussed. One method requires repeated remelting of the silicon film and is controlled by the temperature of the substrate, which is locally heated by the beam. This method results in very few defects and single-crystal silicon-on-insulator stripes up to 50 μm wide. The second method involves little remelting and is primarily controlled by the lateral offset of the beam with respect to the stripes. Single-crystal silicon-on-insulator stripes up to 40 μm wide have been obtained, with defects consisting primarily of stacking faults and twins, as well as some grain boundaries. These defects show little effect on MOS transistor leakage current.

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