SPM electrical characterization of Ti/Al — Based ohmic contacts for sub-micron devices

2010 ◽  
Author(s):  
L. Kolaklieva ◽  
D. Nesheva ◽  
R. Kakanakov ◽  
I. Bineva ◽  
V. Cimalla
Keyword(s):  
Ohmic Contacts ◽  
Electrical Characterization

Improved electrical characterization of Al–Ti ohmic contacts on p-type ion implanted 6H-SiC

2003 ◽  
Vol 18 (6) ◽  
pp. 554-559 ◽  
Author(s):  
F Moscatelli ◽  
A Scorzoni ◽  
A Poggi ◽  
G C Cardinali ◽  
R Nipoti
Keyword(s):  
Ohmic Contacts ◽  
Electrical Characterization ◽  
P Type ◽  
Ion Implanted

Electrical characterization of TiC ohmic contacts to aluminum ion implanted 4H–silicon carbide

2000 ◽  
Vol 77 (10) ◽  
pp. 1478-1480 ◽  
Author(s):  
S.-K. Lee ◽  
C.-M. Zetterling ◽  
E. Danielsson ◽  
M. Östling ◽  
J.-P. Palmquist ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Ohmic Contacts ◽  
Electrical Characterization ◽  
Aluminum Ion ◽  
Ion Implanted

Electrical characterization of Al/Si ohmic contacts to heavily boron doped polycrystalline diamond films

1996 ◽  
Vol 79 (5) ◽  
pp. 2535-2541 ◽  
Author(s):  
M. Werner ◽  
C. Johnston ◽  
P. R. Chalker ◽  
S. Romani ◽  
I. M. Buckley‐Golder
Keyword(s):  
Ohmic Contacts ◽  
Diamond Films ◽  
Electrical Characterization ◽  
Polycrystalline Diamond ◽  
Boron Doped

Nano-Electro-Structural Evolution of Ni-Si Ohmic Contacts to 3C-SiC

2009 ◽  
Vol 615-617 ◽  
pp. 569-572
Author(s):  
Jens Eriksson ◽  
Fabrizio Roccaforte ◽  
Filippo Giannazzo ◽  
Raffaella Lo Nigro ◽  
Giuseppe Moschetti ◽  
...  
Keyword(s):  
Ohmic Contacts ◽  
Annealing Temperature ◽  
Structural Evolution ◽  
Electrical Characterization ◽  
Nickel Silicide ◽  
Specific Contact Resistance ◽  
Specific Contact ◽  
Nanoscale Measurements

This paper reports on the macro- and nanoscale electro-structural evolution, as a function of annealing temperature, of nickel-silicide Ohmic contacts to 3C-SiC, grown on 6H-SiC substrates by a Vapor-Liquid-Solid (VLS) technique. The structural and electrical characterization of the contacts, carried out by combining different techniques, showed a correlation between the annealing temperature and the electrical characteristics in both the macro- and the nanoscale measurements. Increasing the annealing temperature between 600 and 950 °C caused a gradual increase of the uniformity of the nanoscale current-distribution, with an accompanying reduction of the specific contact resistance from 5 x 10-5 to 8.4 x 10-6 Ωcm2. After high temperature annealing (950 °C) the structural composition of the contacts stabilized, as only the Ni2Si phase was detected. A comparison with previous literature findings suggests a superior crystalline quality of the single domain VLS 3C-SiC layers.

Structural and electrical characterization of AuTiAlTi/AlGaN/GaN ohmic contacts

2002 ◽  
Vol 92 (1) ◽  
pp. 94-100 ◽  
Author(s):  
M. W. Fay ◽  
G. Moldovan ◽  
P. D. Brown ◽  
I. Harrison ◽  
J. C. Birbeck ◽  
...  
Keyword(s):  
Ohmic Contacts ◽  
Electrical Characterization

scholarly journals Measurements of Breakdown Field and Forward Current Stability in 3C-SiC pn Junction Diodes Grown on Step-Free 4H-SiC

2006 ◽  
Vol 527-529 ◽  
pp. 1335-1338 ◽  
Author(s):  
Philip G. Neudeck ◽  
David J. Spry ◽  
Andrew J. Trunek
Keyword(s):  
Room Temperature ◽  
Ohmic Contacts ◽  
Electrical Characterization ◽  
Breakdown Field ◽  
Forward Voltage ◽  
Edge Termination ◽  
Low Leakage ◽  
Current Stressing ◽  
Forward Current

This paper reports on initial fabrication and electrical characterization of 3C-SiC p+n junction diodes grown on step-free 4H-SiC mesas. Diodes with n-blocking-layer doping ranging from ~ 2 x 1016 cm-3 to ~ 5 x 1017 cm-3 were fabricated and tested. No optimization of junction edge termination or ohmic contacts was employed. Room temperature reverse characteristics of the best devices show excellent low-leakage behavior, below previous 3C-SiC devices produced by other growth techniques, until the onset of a sharp breakdown knee. The resulting estimated breakdown field of 3C-SiC is at least twice the breakdown field of silicon, but is only around half the breakdown field of <0001> 4H-SiC for the doping range studied. Initial high current stressing of 3C diodes at 100 A/cm2 for more than 20 hours resulted in less than 50 mV change in ~ 3 V forward voltage.

Structural and electrical characterization of ohmic contacts to graphitized silicon carbide

2009 ◽  
Vol 20 (49) ◽  
pp. 495703 ◽  
Author(s):  
Mohammad H Maneshian ◽  
Ming-Te Lin ◽  
David Diercks ◽  
Nigel D Shepherd
Keyword(s):  
Silicon Carbide ◽  
Ohmic Contacts ◽  
Electrical Characterization

Structural and electrical characterization of AuPdAlTi ohmic contacts to AlGaN∕GaN with varying Ti content

2004 ◽  
Vol 96 (10) ◽  
pp. 5588-5595 ◽  
Author(s):  
M. W. Fay ◽  
G. Moldovan ◽  
N. J. Weston ◽  
P. D. Brown ◽  
I. Harrison ◽  
...  
Keyword(s):  
Ohmic Contacts ◽  
Electrical Characterization ◽  
Ti Content
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