Multiscale Modeling of High Field Hole Transport and Excess Noise in Avalanche Amorphous Selenium Layers

Monte Carlo results are presented for the velocity-field characteristics of holes in (i) unstrained Si, (ii) strained Si and (iii) strained SiGe using a full band model as well as an analytic nonparabolic and anisotropic band structure description. The full band Monte Carlo simulations show a strong enhancement of the drift velocity in strained Si up to intermediate fields, but yield the same saturation velocity as in unstrained Si. The drift velocity in strained SiGe is also significantly enhanced for low fields while being substantially reduced in the high-field regime. The results of the analytic band models agree well with the full band results up to medium field strengths and only the saturation velocity is significantly underestimated.

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Excess Noise in Amorphous Selenium Avalanche Photodiodes

Japanese Journal of Applied Physics ◽

10.1143/jjap.30.l1071 ◽

1991 ◽

Vol 30 (Part 2, No. 6B) ◽

pp. L1071-L1074 ◽

Cited By ~ 12

Author(s):

Tetsuya Ohshima ◽

Kazutaka Tsuji ◽

Kenji Sameshima ◽

Tadaaki Hirai ◽

Keiichi Shidara ◽

...

Keyword(s):

Avalanche Photodiodes ◽

Amorphous Selenium ◽

Excess Noise

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Studies on excess noise in stabilized amorphous selenium used in X-ray photodetectors

Journal of Non-Crystalline Solids ◽

10.1016/j.jnoncrysol.2007.09.093 ◽

2008 ◽

Vol 354 (19-25) ◽

pp. 2763-2766 ◽

Cited By ~ 3

Author(s):

Shaikh Hasibul Majid ◽

Robert E. Johanson

Keyword(s):

Amorphous Selenium ◽

Excess Noise ◽

X Ray

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High-field hole transport in silicon nanowires

Journal of Applied Physics ◽

10.1063/1.3264629 ◽

2009 ◽

Vol 106 (11) ◽

pp. 113713 ◽

Cited By ~ 8

Author(s):

A. Verma ◽

A. K. Buin ◽

M. P. Anantram

Keyword(s):

Silicon Nanowires ◽

High Field ◽

Hole Transport

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Monte Carlo Solution of High Electric Field Hole Transport Processes in Avalanche Amorphous Selenium

ACS Omega ◽

10.1021/acsomega.0c04922 ◽

2021 ◽

Vol 6 (7) ◽

pp. 4574-4581

Author(s):

Atreyo Mukherjee ◽

Dragica Vasileska ◽

John Akis ◽

Amir H. Goldan

Keyword(s):

Monte Carlo ◽

Electric Field ◽

Hole Transport ◽

Transport Processes ◽

High Electric Field ◽

Amorphous Selenium

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Does the low hole transport mass in 〈110〉 and 〈111〉 Si nanowires lead to mobility enhancements at high field and stress: A self-consistent tight-binding study

Journal of Applied Physics ◽

10.1063/1.4729806 ◽

2012 ◽

Vol 111 (12) ◽

pp. 123718 ◽

Cited By ~ 9

Author(s):

R. Kotlyar ◽

T. D. Linton ◽

R. Rios ◽

M. D. Giles ◽

S. M. Cea ◽

...

Keyword(s):

High Field ◽

Tight Binding ◽

Hole Transport ◽

Binding Study ◽

Si Nanowires ◽

Self Consistent

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Electron and Hole Transport in a-SiH at High Field and Low Temperature

MRS Proceedings ◽

10.1557/proc-258-825 ◽

1992 ◽

Vol 258 ◽

Author(s):

C. E. Nebel ◽

R. A. Street

Keyword(s):

Electron Transport ◽

Low Temperature ◽

Field Effect ◽

High Field ◽

Hole Transport ◽

Space Charge Limited Current ◽

Band Tail ◽

Tail State ◽

Current Decay ◽

Enhanced Conductivity

ABSTRACTLow temperature, high field properties of electron and hole transport are investigated by time-of-flight (TOF), steady-state and transient space charge limited current (SCLC) experiments on intrinsic a-Si:H. Charge collection and TOF experiments performed at T= 80 K reveal hole μτ-products of = 8 × 10-10 cm2/V and hole mobilities μ ≤ 9×10-3 cm2/Vs. The field effect on hole thermalization is demonstrated by evaluation of the post transit current decay. SCLC experiments on p+ -i-n+ (electron transport) and p + -i-n+ (hole transport) configurations are introduced and interpreted in terms of field enhanced conductivity and mobility. The experiments demonstrate the overwhelming field effect on carrier hopping in the band tail regions of a-Si:H. Considerably higher fields have to be applied in the case of hole transport than electron transport to achieve comparable conductivities; this is discussed on the basis of the different tail state distributions and localization lengths.

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