scholarly journals High-Field Hole Transport in Strained Si and SiGe by Monte Carlo Simulation: Full Band Versus Analytic Band Models

VLSI Design ◽  
1998 ◽  
Vol 8 (1-4) ◽  
pp. 41-45 ◽  
Author(s):  
F. M. Bufler ◽  
P. Graf ◽  
B. Meinerzhagen
Keyword(s):  
Monte Carlo ◽  
Drift Velocity ◽  
High Field ◽  
Hole Transport ◽  
Band Model ◽  
Strained Si ◽  
Saturation Velocity ◽  
Full Band ◽  
Structure Description ◽  
Strained Sige

Monte Carlo results are presented for the velocity-field characteristics of holes in (i) unstrained Si, (ii) strained Si and (iii) strained SiGe using a full band model as well as an analytic nonparabolic and anisotropic band structure description. The full band Monte Carlo simulations show a strong enhancement of the drift velocity in strained Si up to intermediate fields, but yield the same saturation velocity as in unstrained Si. The drift velocity in strained SiGe is also significantly enhanced for low fields while being substantially reduced in the high-field regime. The results of the analytic band models agree well with the full band results up to medium field strengths and only the saturation velocity is significantly underestimated.

Full Band Monte Carlo Study for Two-Dimensional Hole Transport in Strained Si p-MOSFETs

2003 ◽  
Vol 2 (2-4) ◽  
pp. 109-112 ◽  
Author(s):  
Hiroshi Nakatsuji ◽  
Yoshinari Kamakura ◽  
Kenji Taniguchi
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Study ◽  
Hole Transport ◽  
Two Dimensional ◽  
Strained Si ◽  
Full Band

Full band Monte Carlo study of high field transport in cubic phase silicon carbide

2003 ◽  
Vol 93 (6) ◽  
pp. 3389-3394 ◽  
Author(s):  
H.-E. Nilsson ◽  
U. Englund ◽  
M. Hjelm ◽  
E. Bellotti ◽  
K. Brennan
Keyword(s):  
Silicon Carbide ◽  
Monte Carlo ◽  
High Field ◽  
Monte Carlo Study ◽  
Cubic Phase ◽  
Full Band

Full band Monte Carlo simulations of high-field electron transport in wide band-gap semiconductors

2004 ◽  
Vol 19 (4) ◽  
pp. S206-S208 ◽  
Author(s):  
Niels Fitzer ◽  
Angelika Kuligk ◽  
Ronald Redmer ◽  
Martin Städele ◽  
Stephen M Goodnick ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Electron Transport ◽  
Monte Carlo Simulations ◽  
Band Gap ◽  
High Field ◽  
Wide Band ◽  
Wide Band Gap ◽  
Field Electron ◽  
Full Band ◽  
Wide Band Gap Semiconductors

Fluctuations in Drift Velocity of High-Field Domains in n-GaAs

1972 ◽  
Vol 50 (6) ◽  
pp. 617-618
Author(s):  
L. G. Hart
Keyword(s):  
Monte Carlo ◽  
Drift Velocity ◽  
Frequency Modulation ◽  
High Field ◽  
Gunn Diode ◽  
Accumulation Layer ◽  
Transport Studies ◽  
Free Running

A source of frequency-modulation (FM) noise in a free-running Gunn diode, due to fluctuations in valley population in the accumulation layer, is investigated using the results of recent Monte-Carlo high-field transport studies.

scholarly journals A Monte Carlo study ,of Electron Transport in Strained Si/SiGe Heterostructures

VLSI Design ◽  
1998 ◽  
Vol 6 (1-4) ◽  
pp. 213-216
Author(s):  
Mahbub Rashed ◽  
W.-K. Shih ◽  
S. Jallepalli ◽  
R. Zaman ◽  
T. J. T. Kwan ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Electron Transport ◽  
High Field ◽  
Room Temperature ◽  
Monte Carlo Study ◽  
Strained Silicon ◽  
Simulation Tool ◽  
Bulk Materials ◽  
Strained Si ◽  
Mc Simulation

Electron transport in pseudomorphically-grown silicon on relaxed (001) Si1-xGex is investigated using a Monte Carlo (MC) simulation tool. The study includes both electron transport in bulk materials and in nMOS structures. The bulk MC simulator is based on a multiband analytical model, “fitted bands”, representing the features of a realistic energy bandstructure. The investigation includes the study of low- and high-field electron transport characteristics at 77 K and 300 K. Single particle MC simulations are performed for a strained silicon nMOS structure at room temperature. Both calculations show saturation of mobility enhancement in strained silicon beyond germanium mole fraction of 0.2.

Full-band Monte Carlo simulations of high-field electron transport in GaAs and ZnS

2003 ◽  
Vol 67 (20) ◽  
Author(s):  
Niels Fitzer ◽  
Angelika Kuligk ◽  
Ronald Redmer ◽  
Martin Städele ◽  
Stephen M. Goodnick ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Electron Transport ◽  
Monte Carlo Simulations ◽  
High Field ◽  
Field Electron ◽  
Full Band
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