Thin-film, flat-panel, composite detectors for projection and tomographic imaging

Author(s):  
L.E. Antonuk ◽  
W. Huang ◽  
K.L. Lam ◽  
E.J. Morton ◽  
R.K.T. Haken ◽  
...  
1994 ◽  
Vol 13 (3) ◽  
pp. 482-490 ◽  
Author(s):  
L.E. Antonuk ◽  
J. Boudry ◽  
Weidong Huang ◽  
K.L. Lam ◽  
E.J. Morton ◽  
...  

2011 ◽  
Vol 50 (3) ◽  
pp. 03CB06 ◽  
Author(s):  
Tong-Hun Hwang ◽  
Ik-Seok Yang ◽  
Oh-Kyong Kwon ◽  
Min-Ki Ryu ◽  
Choon-Won Byun ◽  
...  

2002 ◽  
Vol 197-198 ◽  
pp. 321-324 ◽  
Author(s):  
R.K Singh ◽  
Z Chen ◽  
D Kumar ◽  
K Cho ◽  
M Ollinger

1997 ◽  
Vol 471 ◽  
Author(s):  
J. Liu ◽  
D. C. Morton ◽  
M. R. Miller ◽  
Y. Li ◽  
E. W. Forsythe ◽  
...  

ABSTRACTZn2SiO4:Mn thin films were deposited and studied as thin film phosphors for flat panel cathodoluminescent displays. Crystallized films with improved electrical conductivity were obtained after conventional and rapid thermal annealings in a N2 environment at 850Xy11100 °C for 0.25 to 60 minutes. A maximum cathodoluminescent efficiency of 1.3 Lm/W was achieved under dc excitation at 1500 volts. The luminescent emission from these thin films was peaked around 525 nm. The decay time of these films was controlled in the range of 2 to 10 ms by varying the deposition and annealing parameters. The fast response time of these thin films overcomes the long decay limitation of the Zn2SiO4:Mn powder phosphor in practical display applications.


2001 ◽  
Vol 32 (1) ◽  
pp. 201 ◽  
Author(s):  
Alex Kastalsky ◽  
Sergey Shokhor ◽  
Jack Hou ◽  
Sylvain Naar ◽  
Nikolai Abanshin ◽  
...  

2012 ◽  
Vol 1388 ◽  
Author(s):  
Jun Yu ◽  
Kai Ying ◽  
David Hasko ◽  
Sungsik Lee ◽  
Arman Ahnood ◽  
...  

AbstractWireless power transfer is experimentally demonstrated by transmission between an AC power transmitter and receiver, both realised using thin film technology. The transmitter and receiver thin film coils are chosen to be identical in order to promote resonant coupling. Planar spiral coils are used because of the ease of fabrication and to reduce the metal layer thickness. The energy transfer efficiency as a function of transfer distance is analysed along with a comparison between the theoretical and the experimental results.


2002 ◽  
Vol 715 ◽  
Author(s):  
J.P. Lu ◽  
K. Van Schuylenbergh ◽  
J. Ho ◽  
Y. Wang ◽  
J. B. Boyce ◽  
...  

AbstractThe technology of large area electronics has made significant progress in recent years because of the fast maturing excimer laser annealing process. The new thin film transistors based on laser processed poly silicon provide unprecedented performance over the traditional thin film transistors using amorphous silicon. They open up the possibility of building flat panel displays and imagers with higher integration and performance. In this paper, we will review the progress of poly-Si thin film transistor technology with emphasis on imager applications. We also discuss the challenges of future improvement of flat panel imagers based on this technology.


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