Development of High-Efficiency Zn2SiO4:Mn Thin Films for Flat Panel Cathodoluminescent Displays

1997 ◽  
Vol 471 ◽  
Author(s):  
J. Liu ◽  
D. C. Morton ◽  
M. R. Miller ◽  
Y. Li ◽  
E. W. Forsythe ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Conductivity ◽  
Response Time ◽  
Decay Time ◽  
High Efficiency ◽  
Fast Response ◽  
Flat Panel ◽  
Powder Phosphor ◽  
Fast Response Time

ABSTRACTZn2SiO4:Mn thin films were deposited and studied as thin film phosphors for flat panel cathodoluminescent displays. Crystallized films with improved electrical conductivity were obtained after conventional and rapid thermal annealings in a N2 environment at 850Xy11100 °C for 0.25 to 60 minutes. A maximum cathodoluminescent efficiency of 1.3 Lm/W was achieved under dc excitation at 1500 volts. The luminescent emission from these thin films was peaked around 525 nm. The decay time of these films was controlled in the range of 2 to 10 ms by varying the deposition and annealing parameters. The fast response time of these thin films overcomes the long decay limitation of the Zn2SiO4:Mn powder phosphor in practical display applications.

A highly sensitive flexible SnS thin film photodetector in the ultraviolet to near infrared prepared by chemical bath deposition

RSC Advances ◽  
2016 ◽  
Vol 6 (116) ◽  
pp. 114980-114988 ◽  
Author(s):  
Mohamed S. Mahdi ◽  
K. Ibrahim ◽  
A. Hmood ◽  
Naser M. Ahmed ◽  
Shrook A. Azzez ◽  
...  
Keyword(s):  
Thin Film ◽  
Response Time ◽  
Chemical Bath Deposition ◽  
Near Infrared ◽  
Broad Band ◽  
Fast Response ◽  
Industrial Applications ◽  
Fast Response Time ◽  
Highly Sensitive ◽  
High Photosensitivity

A novel flexible broad band UV-vis-NIR SnS photodetector with high photosensitivity and fast response time for scientific and industrial applications.

scholarly journals Dual-Cation Electrolytes Crosslinked with MXene for High-Performance Electrochromic Devices

Nanomaterials ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 874
Author(s):  
Soyoung Bae ◽  
Youngno Kim ◽  
Jeong Min Kim ◽  
Jung Hyun Kim
Keyword(s):  
Ionic Conductivity ◽  
Response Time ◽  
Indium Tin Oxide ◽  
High Performance ◽  
Fast Response ◽  
High Ionic Conductivity ◽  
Electrochromic Device ◽  
Fast Response Time ◽  
Coloration Efficiency ◽  
Conduction Pathway

MXene, a 2D material, is used as a filler to manufacture polymer electrolytes with high ionic conductivity because of its unique sheet shape, large specific surface area and high aspect ratio. Because MXene has numerous -OH groups on its surface, it can cause dehydration and condensation reactions with poly(4-styrenesulfonic acid) (PSSA) and consequently create pathways for the conduction of cations. The movement of Grotthuss-type hydrogen ions along the cation-conduction pathway is promoted and a high ionic conductivity can be obtained. In addition, when electrolytes composed of a conventional acid or metal salt alone is applied to an electrochromic device (ECD), it does not bring out fast response time, high coloration efficiency and transmittance contrast simultaneously. Therefore, dual-cation electrolytes are designed for high-performance ECDs. Bis(trifluoromethylsulfonyl)amine lithium salt (LiTFSI) was used as a source of lithium ions and PSSA crosslinked with MXene was used as a source of protons. Dual-Cation electrolytes crosslinked with MXene was applied to an indium tin oxide-free, all-solution-processable ECD. The effect of applying the electrolyte to the device was verified in terms of response time, coloration efficiency and transmittance contrast. The ECD with a size of 5 × 5 cm2 showed a high transmittance contrast of 66.7%, fast response time (8 s/15 s) and high coloration efficiency of 340.6 cm2/C.

scholarly journals Isothiocyanato-Tolanes Based High Birefringence and Fast Response Time Mixtures for Photonic Applications

2006 ◽  
Vol 453 (1) ◽  
pp. 215-226 ◽  
Author(s):  
Sebastian Gauza ◽  
Chien-Hui Wen ◽  
Yang Zhao ◽  
Shin-Tson Wu ◽  
Anna Ziółek ◽  
...  
Keyword(s):  
Response Time ◽  
Fast Response ◽  
Fast Response Time ◽  
High Birefringence

Enhanced UV Photon-response of Tin Nano Cluster Loaded- laser Irradiated ZnO Thin film detector

2011 ◽  
Vol 1288 ◽  
Author(s):  
Rashmi Menon ◽  
K. Sreenivas ◽  
Vinay Gupta
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Surface States ◽  
Response Speed ◽  
Rf Magnetron Sputtering ◽  
Fast Response ◽  
Zno Thin Films ◽  
Zno Thin Film ◽  
Photo Response

ABSTRACTZinc Oxide (ZnO), II-VI compound semiconductor, is a promising material for ultraviolet (UV) photon sensor applications due to its attractive properties such as good photoconductivity, ease processing at low temperatures and excellent radiation hardness. The rf magnetron sputtering is a suitable deposition technique due to better control over stoichiometry and deposition of uniform film. Studies have shown that the presence of surface defects in ZnO and subsequently their passivation are crucial for enhanced photo-response characteristics, and to obtain the fast response speed. Worldwide efforts are continuing to develop good quality ZnO thin films with novel design structures for realization of an efficient UV photon sensor. In the present work, UV photon sensor is fabricated using a ZnO thin films deposited by rf magnetron sputtering on the corning glass substrate. Photo-response, (Ion/Ioff) of as-grown ZnO film of thickness 100 nm is found to be 3×103 with response time of 90 ms for UV intensity of 140 μW/cm2 (λ = 365 nm). With irradiation on ZnO thin film by pulsed Nd:YAG laser (forth harmonics 266 nm), the sensitivity of the UV sensor is found to enhance. The photo-response increases after laser irradiation to 4x104 with a fast response speed of 35 ms and attributed to the change in surface states and the native defects in the ZnO thin film. Further, enhancement in the ultraviolet (UV) photo-response (8×104) of detector was observed after integrating the nano-scale islands of Sn metal on the surface of laser irradiated ZnO thin film.

Absorber Films of Ag2S and AgBiS2 prepared by Chemical Bath Deposition

2002 ◽  
Vol 730 ◽  
Author(s):  
A. Nuñez Rodriguez ◽  
M.T.S. Nair ◽  
P.K. Nair
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Conductivity ◽  
Silver Nitrate ◽  
Band Gap ◽  
Chemical Bath Deposition ◽  
Optical Band Gap ◽  
Sodium Thiosulfate ◽  
Xrd Pattern ◽  
Glass Substrates

AbstractAg2S thin films of 90 nm to 300 nm in thickness were deposited at 70°C on glass substrates immersed in a bath mixture containing silver nitrate, sodium thiosulfate and dimethylthiourea. When the films are heated in nitrogen at temperatures 200°C to 400°C, crystallinity is improved and XRD pattern similar to that of acanthite is observed. These films possess electrical conductivity of 10-3 (ohm cm)-1, are photoconductive and exhibit an optical band gap of 1.36 eV. When Ag2S thin film is deposited over a thin film of Bi2S3, also obtained by chemical bath deposition from bismuth nitrate, triethanolamine and thioacetamide, and heated at 300°C to 400°C in nitrogen, a ternary compound, AgBiS2 is formed. This material has an electrical conductivity of 5x10-5 (ohm cm)-1, is photoconductive and possesses optical band gap 0.95 eV.

A dual-responsive fluorescent sensor for Hg2+ and thiols based on N-doped silicon quantum dots and its application in cell imaging

2019 ◽  
Vol 7 (44) ◽  
pp. 7033-7041 ◽  
Author(s):  
Sansan Shen ◽  
Bohui Huang ◽  
Xiaofeng Guo ◽  
Hong Wang
Keyword(s):  
Quantum Dots ◽  
Response Time ◽  
Cell Imaging ◽  
Fluorescent Sensor ◽  
High Sensitivity ◽  
Fast Response ◽  
Silicon Quantum Dots ◽  
Fast Response Time ◽  
Dual Responsive ◽  
Doped Silicon

An on–off–on fluorescent sensor based on N-SiQD has the advantages of fast response time and high sensitivity to Hg2+ and GSH.

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