Modeling of Current Conduction during RESET Phase of Pt/Ta2O5/TaOx/Pt Bipolar Resistive RAM Devices

2018 IEEE 7th Non-Volatile Memory Systems and Applications Symposium (NVMSA) ◽

10.1109/nvmsa.2018.00014 ◽

2018 ◽

Author(s):

Arya Lekshmi Jagath ◽

T. Nandha Kumar ◽

Haider Abbas F. Almurib

Keyword(s):

Resistive Ram ◽

Current Conduction

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Enabling Resistive-RAM-based Activation Functions for Deep Neural Network Acceleration

Proceedings of the 2020 on Great Lakes Symposium on VLSI ◽

10.1145/3386263.3406915 ◽

2020 ◽

Author(s):

Zihan Zhang ◽

Taozhong Li ◽

Ning Guan ◽

Qin Wang ◽

Guanghui He ◽

...

Keyword(s):

Neural Network ◽

Deep Neural Network ◽

Activation Functions ◽

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On the examination of temperature-dependent possible current-conduction mechanisms of Au/(nanocarbon-PVP)/n-Si Schottky barrier diodes in wide range of voltage

Journal of Materials Science Materials in Electronics ◽

10.1007/s10854-021-05669-0 ◽

2021 ◽

Author(s):

Ömer Sevgili

Keyword(s):

Schottky Barrier ◽

Schottky Barrier Diodes ◽

Temperature Dependent ◽

Conduction Mechanisms ◽

Current Conduction

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Interface Optimization of Passivated Er₂O₃/Al₂O₃/InP MOS Capacitors and Modulation of Leakage Current Conduction Mechanism

IEEE Transactions on Electron Devices ◽

10.1109/ted.2021.3072928 ◽

2021 ◽

pp. 1-7

Author(s):

Lesheng Qiao ◽

Gang He ◽

Lin Hao ◽

Jinyu Lu ◽

Qian Gao ◽

...

Keyword(s):

Leakage Current ◽

Conduction Mechanism ◽

Mos Capacitors ◽

Current Conduction

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Reaction-Drift Model for Switching Transients in Pr₀.₇Ca₀.₃MnO₃-Based Resistive RAM

IEEE Transactions on Electron Devices ◽

10.1109/ted.2020.3011387 ◽

2020 ◽

Vol 67 (9) ◽

pp. 3610-3617

Author(s):

Vivek Saraswat ◽

Shankar Prasad ◽

Abhishek Khanna ◽

Ashwin Wagh ◽

Ashwin Bhat ◽

...

Keyword(s):

Resistive Ram ◽

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Current Conduction Model for Oxide-Based Resistive Random Access Memory Verified by Low-Frequency Noise Analysis

IEEE Transactions on Electron Devices ◽

10.1109/ted.2013.2240457 ◽

2013 ◽

Vol 60 (3) ◽

pp. 1272-1275 ◽

Author(s):

Z. Fang ◽

H. Y. Yu ◽

W. J. Fan ◽

G. Ghibaudo ◽

J. Buckley ◽

...

Keyword(s):

Noise Analysis ◽

Random Access ◽

Low Frequency ◽

Random Access Memory ◽

Resistive Random Access Memory ◽

Frequency Noise ◽

Low Frequency Noise ◽

Access Memory ◽

Conduction Model ◽

Current Conduction

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Enabling in-situ logic-in-memory capability using resistive-RAM crossbar memory

2016 International Conference on Field-Programmable Technology (FPT) ◽

10.1109/fpt.2016.7929541 ◽

2016 ◽

Author(s):

Naifeng Jing ◽

Taozhong Li ◽

Zhongyuan Zhao ◽

Wei Jin ◽

Yanan Sun ◽

...

Keyword(s):

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The Current Conduction Issues in High-k Gate Dielectrics

2007 IEEE Conference on Electron Devices and Solid-State Circuits ◽

10.1109/edssc.2007.4450055 ◽

2007 ◽

Author(s):

Hei Wong

Keyword(s):

Gate Dielectrics ◽

High K ◽

Current Conduction

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Characteristics of Irregular Forward Current Conduction in 4H-SiC pn Junction Diodes

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.904 ◽

2004 ◽

Vol 43 (3) ◽

pp. 904-908 ◽

Author(s):

Takasumi Ohyanagi ◽

Toshiyuki Ohno ◽

Atsuo Watanabe

Keyword(s):

Forward Current ◽

Pn Junction ◽

Current Conduction

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Space-charge-controlled field emission model of current conduction through Al2O3 films

Journal of Applied Physics ◽

10.1063/1.4941547 ◽

2016 ◽

Vol 119 (6) ◽

pp. 064505 ◽

Keyword(s):

Space Charge ◽

Field Emission ◽

Emission Model ◽

Current Conduction ◽

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A Cd(ii)-based MOF as a photosensitive Schottky diode: experimental and theoretical studies

Dalton Transactions ◽

10.1039/c7dt02184d ◽

2017 ◽

Vol 46 (34) ◽

pp. 11239-11249 ◽

Author(s):

Shibashis Halder ◽

Arka Dey ◽

Aradhita Bhattacharjee ◽

Joaquín Ortega-Castro ◽

Antonio Frontera ◽

...

Keyword(s):

Schottky Diode ◽

Electronic Transition ◽

Theoretical Studies ◽

Bond Lengths ◽

Current Conduction ◽

Experimental And Theoretical Studies

A Cd(ii) based 2D MOF shows photosensitive Schottky diode character. Light of a certain wavelength changes some bond lengths within the MOF. This leads to the reduction in the energy needed for the allowed electronic transition showing enhanced current conduction.

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