Fabrication of high-quality amorphous silicon film from cyclopentasilane by vapor deposition between two parallel substrates

2015 ◽  
Vol 51 (21) ◽  
pp. 4417-4420 ◽  
Author(s):  
Zhongrong Shen ◽  
Takashi Masuda ◽  
Hideyuki Takagishi ◽  
Keisuke Ohdaira ◽  
Tatsuya Shimoda
Keyword(s):  
Thermal Decomposition ◽  
Amorphous Silicon ◽  
High Throughput ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Cost Reduction ◽  
Film Formation ◽  
Silicon Film ◽  
High Quality ◽  
Amorphous Silicon Film

Cyclopentasilane converts into amorphous silicon film between two parallel substrates under atmospheric pressure by thermal decomposition at 350–400 °C, which combines the advantages of high throughput with cost reduction and high quality film formation.

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