Electronic and structural properties of copper selenide (Cu2−xSe) thin films as determined by in-situ real-time and ex-situ characterization

2012 ◽  
Author(s):  
H. Khatri ◽  
K. Aryal ◽  
R.W Collins ◽  
S. Marsillac
Keyword(s):  
Thin Films ◽  
Real Time ◽  
Structural Properties ◽  
Copper Selenide ◽  
Ex Situ ◽  
Electronic And Structural Properties

Novel in situ and real-time optical probes to detect (surface) defect states of a-Si:H

2005 ◽  
Vol 862 ◽  
Author(s):  
W.M.M. Kessels ◽  
I.M.P. Aarts ◽  
J.J.H. Gielis ◽  
J.P.M. Hoefnagels ◽  
M.C.M. van de Sanden
Keyword(s):  
Thin Films ◽  
Real Time ◽  
Science Studies ◽  
Film Growth ◽  
Second Harmonic ◽  
Ex Situ ◽  
Defect States ◽  
Strained Si ◽  
Cavity Ringdown

AbstractThis paper describes two novel optical diagnostics that were recently introduced to the field of Si-based thin films, in particular for probing defect states present in the bulk and at the surface of a-Si:H films. It is expected that these diagnostics, when applied in situ or real time during film growth, can provide new insights into the a-Si:H film properties as well as into the fundamental surface processes during growth. The first method is cavity ringdown spectroscopy (CRDS). From ex situ measurements on a-Si:H thin films, it is shown that this method is very powerful for measuring absolute defect-related absorptions at subgap energies without the need for a calibration procedure, even for films as thin as 4 nm. It is also shown that the method can be used for measuring rare-earth dopants – here Er3+ in silicon-rich oxide – to the extent that issues about absorption cross-sections can be resolved by using thin samples instead of waveguides. Furthermore, the in situ application of the method for thin films is discussed by presenting the evanescent-wave cavity ringdown (EW-CRDS) technique. The second method is spectroscopic second harmonic generation (SHG). It has been found that this non-linear optical technique yields a photon energy dependent signal for as-deposited a-Si:H films and that this signal has a contribution from a-Si:H surface states. From a comparison with c-Si surface science studies, the possible origin of the signal from surface Si dangling bonds and strained Si-Si bonds is discussed. The application of SHG during real-time film growth is also presented.

scholarly journals Electronic and structural properties of molybdenum thin films as determined by real-time spectroscopic ellipsometry

2009 ◽  
Vol 94 (14) ◽  
pp. 141908 ◽  
Author(s):  
J. D. Walker ◽  
H. Khatri ◽  
V. Ranjan ◽  
Jian Li ◽  
R. W. Collins ◽  
...  
Keyword(s):  
Thin Films ◽  
Real Time ◽  
Structural Properties ◽  
Spectroscopic Ellipsometry ◽  
Electronic And Structural Properties

The use of transmission and analytical electron microscopy in studying reactions and phase transformations in thin film

1993 ◽  
Vol 51 ◽  
pp. 842-843
Author(s):  
K. Barmak
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Transformations ◽  
Analytical Electron Microscopy ◽  
Ex Situ ◽  
Multilayer Thin Films ◽  
Absolute Concentration ◽  
Analytical Electron ◽  
Deposition Step

Generally, processing of thin films involves several annealing steps in addition to the deposition step. During the annealing steps, diffusion, transformations and reactions take place. In this paper, examples of the use of TEM and AEM for ex situ and in situ studies of reactions and phase transformations in thin films will be presented.The ex situ studies were carried out on Nb/Al multilayer thin films annealed to different stages of reaction. Figure 1 shows a multilayer with dNb = 383 and dAl = 117 nm annealed at 750°C for 4 hours. As can be seen in the micrograph, there are four phases, Nb/Nb3-xAl/Nb2-xAl/NbAl3, present in the film at this stage of the reaction. The composition of each of the four regions marked 1-4 was obtained by EDX analysis. The absolute concentration in each region could not be determined due to the lack of thickness and geometry parameters that were required to make the necessary absorption and fluorescence corrections.

Real-Time Analysis Of In-Situ Spectroscopic Ellipsometric Data During Mbe Growth Of III-V Semiconductors

1991 ◽  
Vol 222 ◽  
Author(s):  
B. Johs ◽  
J. L. Edwards ◽  
K. T. Shiralagi ◽  
R. Droopad ◽  
K. Y. Choi ◽  
...  
Keyword(s):  
Real Time ◽  
Optical Constants ◽  
Growth Parameters ◽  
Ex Situ ◽  
Time Analysis ◽  
Mbe Growth ◽  
In Situ Data ◽  
Real Time Analysis

ABSTRACTA modular spectroscopic ellipsometer, capable of both in-situ and ex-situ operation, has been used to measure important growth parameters of GaAs/AIGaAs structures. The ex-situ measurements provided layer thicknesses and compositions of the grown structures. In-situ ellipsometric measurements allowed the determination of growth rates, layer thicknesses, and high temperature optical constants. By performing a regression analysis of the in-situ data in real-time, the thickness and composition of an AIGaAs layer were extracted during the MBE growth of the structure.

scholarly journals Processing Solvent-Dependent Electronic and Structural Properties of Cesium Lead Triiodide Thin Films

2017 ◽  
Vol 8 (17) ◽  
pp. 4172-4176 ◽  
Author(s):  
Alexandra J. Ramadan ◽  
Luke A. Rochford ◽  
Sarah Fearn ◽  
Henry J. Snaith
Keyword(s):  
Thin Films ◽  
Structural Properties ◽  
Electronic And Structural Properties

Kinetics of Ion-Exchange Reactions in Hybrid Organic–Inorganic Perovskite Thin Films Studied by In Situ Real-Time X-ray Scattering

2018 ◽  
Vol 9 (23) ◽  
pp. 6750-6754 ◽  
Author(s):  
Alessandro Greco ◽  
Alexander Hinderhofer ◽  
M. Ibrahim Dar ◽  
Neha Arora ◽  
Jan Hagenlocher ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Exchange ◽  
Real Time ◽  
Exchange Reactions ◽  
Inorganic Perovskite ◽  
X Ray ◽  
X Ray Scattering ◽  
Kinetics Of ◽  
Kinetics Of Ion Exchange

In-Situ Tem Study of Copper-Tin Intermetallic Formation

1993 ◽  
Vol 323 ◽  
Author(s):  
Yujing Wu ◽  
Elizabeth G. Jacobs ◽  
Cyrus Pouraghabagher ◽  
Russell F. Pinizzotto
Keyword(s):  
Thin Films ◽  
Real Time ◽  
Diffusion Barrier ◽  
Solder Joints ◽  
Effective Diffusion ◽  
Copper Substrate ◽  
In Situ Tem ◽  
Intermetallic Formation ◽  
Intermetallic Growth

AbstractThe formation and growth of Cu6Sn5 and Cu3Sn at the interface of Sn-Pb solder/copper substrate are factors which affect the solderability and reliability of electronic solder joints. The addition of particles such as Ni to eutectic Sn-Pb solder drastically affects the activation energies of formation for both intermetallics. This study was performed to understand the mechanisms of intermetallic formation and the effects of Ni on intermetallic growth. Cu/Sn and Cu/Sn/Ni thin films were deposited by evaporation and observed in the TEM in real time using a hot stage. The diffusion of Sn through Cu6Sn5 and Cu3Sn followed by reaction with Cu must occur for intermetallic formation and growth to take place. Ni is an effective diffusion barrier which prevents Sn from diffusing into Cu.

scholarly journals Quantitative In-Situ Nanoindentation of Thin Films in a Transmission Electron Microscope

2001 ◽  
Vol 7 (S2) ◽  
pp. 912-913
Author(s):  
A.M. Minorl ◽  
E.A. Stach ◽  
J.W. Morris
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Real Time ◽  
Silicon Substrates ◽  
Boron Doped Diamond ◽  
Boron Doped ◽  
Transmission Electron ◽  
Diamond Indenter ◽  
Force Calibration

A unique in situ nanoindentation stage has been built and developed at the National Center for Electron Microscopy in Berkeley, CA. By using piezoceramic actuators to finely position a 3-sided, boron-doped diamond indenter, we are able to image in real time the nanoindentation induced deformation of thin films. Recent work has included the force-calibration of the indenter, using silicon cantilevers to establish a relationship between the voltage applied to the piezoactuators, the displacement of the diamond tip, and the force generated.In this work, we present real time, in situ TEM observations of the plastic deformation of Al thin films grown on top of lithographically-prepared silicon substrates. The in situ nanoindentations require a unique sample geometry (see Figure 1) in which the indenter approaches the specimen normal to the electron beam. in order to meet this requirement, special wedge-shaped silicon samples were designed and microfabricated so that the tip of the wedge is sharp enough to be electron transparent.

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