Enhanced p-type conductivity and band gap narrowing in heavily B-doped p-BaSi2 films grown by molecular beam epitaxy

2013 ◽  
Author(s):  
M. Ajmal Khan ◽  
K. O. Hara ◽  
W. Du ◽  
M. Baba ◽  
K. Nakamura ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Band Gap ◽  
Molecular Beam ◽  
Type Conductivity ◽  
Band Gap Narrowing ◽  
P Type

p-type conductivity control of ZnSe with insertion of ZnTe:Li submonolayers in metalorganic molecular-beam epitaxy

1998 ◽  
Vol 84 (11) ◽  
pp. 6100-6104 ◽  
Author(s):  
J. Hirose ◽  
K. Uesugi ◽  
M. Hoshiyama ◽  
T. Numai ◽  
I. Suemune ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Type Conductivity ◽  
Metalorganic Molecular Beam Epitaxy ◽  
P Type

scholarly journals P-type conductivity in cubic GaMnN layers grown by molecular beam epitaxy

2003 ◽  
Vol 19 (3) ◽  
pp. L13-L16 ◽  
Author(s):  
S V Novikov ◽  
K W Edmonds ◽  
A D Giddings ◽  
K Y Wang ◽  
C R Staddon ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Type Conductivity ◽  
P Type

p-Type Conductivity Control in ZnO Films Grown by Molecular-Beam Epitaxy

2016 ◽  
Vol 857 ◽  
pp. 131-135
Author(s):  
Seung Hwan Park ◽  
Dong Cheol Oh ◽  
Chul Gyu Jhun ◽  
Seung Oh Han ◽  
Takafumi Yao
Keyword(s):  
Molecular Beam Epitaxy ◽  
Thermal Annealing ◽  
Electron Concentration ◽  
Molecular Beam ◽  
Hole Concentration ◽  
Hole Mobility ◽  
Zno Films ◽  
Type Conductivity ◽  
Donor Type ◽  
P Type

We report on the p-type conductivity control using N and Te codoping and thermal annealing in the ZnO films, heteroepitaxially grown on Al2O3 substrates and homoepitaxially grown on ZnO substrates by molecular-beam epitaxy, respectively. The N and Te codoping and the homoepitaxy effectively reduce the background electron concentration in ZnO films due to the suppression of various defect generation, and the thermal annealing causes the conductivity conversion from n-type to p-type due to the activation of N-related defects and the annihilation of donor-type defects. The p-type conductivity with a hole concentration of 1.61016 cm-3 and a hole mobility of 16 cm2/Vsec is obtained in the ZnO:N+T film grown on the Al2O3 substrate and the p-type conductivity with a hole concentration of 4.01016 cm-3 and a hole mobility of 11 cm2/Vsec is obtained in the ZnO:N+Te film grown on the ZnO substrate.

Mn doping and p-type conductivity in zinc-blende GaMnN layers grown by molecular beam epitaxy

2005 ◽  
Vol 23 (3) ◽  
pp. 1294 ◽  
Author(s):  
S. V. Novikov ◽  
K. W. Edmonds ◽  
L. X. Zhao ◽  
A. D. Giddings ◽  
K. Y. Wang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Mn Doping ◽  
Type Conductivity ◽  
Zinc Blende ◽  
P Type

ELECTRON BEAM SOURCE MOLECULAR BEAM EPITAXY OF AlxGa1-xAs GRADED BAND GAP DEVICE STRUCTURES

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-607-C4-614
Author(s):  
R. J. MALIK ◽  
A. F.J. LEVI ◽  
B. F. LEVINE ◽  
R. C. MILLER ◽  
D. V. LANG ◽  
...  
Keyword(s):  
Electron Beam ◽  
Molecular Beam Epitaxy ◽  
Band Gap ◽  
Molecular Beam ◽  
Beam Source ◽  
Device Structures ◽  
Graded Band Gap

Molecular beam epitaxy of p-type ZnSTe:N and p-n-junction light emitting diodes

2014 ◽  
Vol 11 (7-8) ◽  
pp. 1282-1285 ◽  
Author(s):  
Kunio Ichino ◽  
Takahiro Kojima ◽  
Shunsuke Obata ◽  
Takuma Kuroyanagi ◽  
Kenta Kimata ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
P Type
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