Enhanced p-type conductivity and band gap narrowing in heavily Al doped NiO thin films deposited by RF magnetron sputtering

P-type transparent conducting SnO thin films were directly fabricated using RF magnetron sputtering. The electronic properties of the SnO thin films were enhanced by Na ion implantation and annealing at 200°C. The growth and implantation conditions were systemically investigated. The electronic properties, optical properties, microstructure and surface morphologies of the films were characterized. It was observed that the structure of the Na-doped SnO films was crucial to improving their p-type conductivity.

Download Full-text

P-type conductivity in doped and codoped ZnO thin films synthesized by RF magnetron sputtering

Journal of Modern Optics ◽

10.1080/09500340.2015.1039617 ◽

2015 ◽

Vol 62 (17) ◽

pp. 1368-1373 ◽

Cited By ~ 13

Author(s):

Trilok Kumar Pathak ◽

Vinod Kumar ◽

H.C. Swart ◽

L.P. Purohit

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Rf Magnetron Sputtering ◽

Zno Thin Films ◽

Type Conductivity ◽

P Type

Download Full-text

Single Crystal, High Band Gap CdS Thin Films Grown by RF Magnetron Sputtering in Argon Atmosphere for Solar Cell Applications

Journal of Nano- and Electronic Physics ◽

10.21272/jnep.10(3).03005 ◽

2018 ◽

Vol 10 (3) ◽

pp. 03005-1-03005-6 ◽

Cited By ~ 1

Author(s):

Rupali Kulkarni ◽

◽

Amit Pawbake ◽

Ravindra Waykar ◽

Ashok Jadhawar ◽

...

Keyword(s):

Thin Films ◽

Solar Cell ◽

Magnetron Sputtering ◽

Single Crystal ◽

Band Gap ◽

Rf Magnetron Sputtering ◽

Argon Atmosphere ◽

Cds Thin Films ◽

High Band

Download Full-text

P-type transparent conducting In2O3–Ag2O thin films prepared by rf magnetron sputtering

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.581262 ◽

1998 ◽

Vol 16 (3) ◽

pp. 1218-1221 ◽

Cited By ~ 18

Author(s):

T. Minami ◽

K. Shimokawa ◽

T. Miyata

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Rf Magnetron Sputtering ◽

Transparent Conducting ◽

P Type

Download Full-text

Processing and Study of Optical and Electrical Properties of (Mg, Al) Co-Doped ZnO Thin Films Prepared by RF Magnetron Sputtering for Photovoltaic Application

Materials ◽

10.3390/ma13092146 ◽

2020 ◽

Vol 13 (9) ◽

pp. 2146 ◽

Cited By ~ 3

Author(s):

Chayma Abed ◽

Susana Fernández ◽

Selma Aouida ◽

Habib Elhouichet ◽

Fernando Priego ◽

...

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Magnetron Sputtering ◽

Band Gap ◽

Rf Magnetron Sputtering ◽

Band Gap Energy ◽

Thin Layers ◽

Working Pressure ◽

Hall Effect Measurements ◽

Diffraction Patterns

In this study, high transparent thin films were prepared by radio frequency (RF) magnetron sputtering from a conventional solid state target based on ZnO:MgO:Al2O3 (10:2 wt %) material. The films were deposited on glass and silicon substrates at the different working pressures of 0.21, 0.61, 0.83 and 1 Pa, 300 °C and 250 W of power. X-ray diffraction patterns (XRD), atomic force microscopy (AFM), UV-vis absorption and Hall effect measurements were used to evaluate the structural, optical, morphological and electrical properties of thin films as a function of the working pressure. The optical properties of the films, such as the refractive index, the extinction coefficient and the band gap energy were systematically studied. The optical band gap of thin films was estimated from the calculated absorption coefficient. That parameter, ranged from 3.921 to 3.655 eV, was hardly influenced by the working pressure. On the other hand, the lowest resistivity of 8.8 × 10−2 Ω cm−1 was achieved by the sample deposited at the lowest working pressure of 0.21 Pa. This film exhibited the best optoelectronic properties. All these data revealed that the prepared thin layers would offer a good capability to be used in photovoltaic applications.

Download Full-text

Microstructural and Properties of P-type Nickel Oxide (NiO) Thin Films Deposited by RF Magnetron Sputtering

Advanced Science Letters ◽

10.1166/asl.2018.12211 ◽

2018 ◽

Vol 24 (8) ◽

pp. 5866-5871 ◽

Cited By ~ 1

Author(s):

G Balakrishnan ◽

J. S. Ram Vinoba ◽

R Rishaban ◽

S Nathiya ◽

O. S. Nirmal Ghosh

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Nickel Oxide ◽

High Mobility ◽

Rf Magnetron Sputtering ◽

X Ray Diffraction ◽

Glass Substrates ◽

Type Semiconductor ◽

P Type ◽

Nio Films

Nickel oxide (NiO) thin films were deposited on glass substrates using the RF magnetron sputtering technique at room temperature. The Argon and oxygen flow rates were kept constant at 10 sccm and 5 sccm respectively. The films were annealed at various temperatures (RT-300 °C) and its influence on the microstructural, optical and electrical properties were investigated. The X-ray diffraction (XRD) investigation of NiO films indicated the polycrystallinity of the films with the (111), (200) and (220) reflections corresponding to the cubic structure of NiO films. The crystallite size of NiO films was in the range ~4–14 nm. The transmittance of the films increased from 20 to 75% with increasing annealed temperature. The optical band gap of the films was 3.6–3.75 eV range for the as-deposited and annealed films. The Hall effect studies indicated the p-type conductivity of films and the film annealed at 300 °C showed higher carrier concentration (N), high conductivity (σ) and high mobility (μ) compared to other films. These NiO films can be used as a P-type semiconductor material in the devices require transparent conducting films.

Download Full-text